http://onsemi.com semiconductor components industries, llc, 2013 july, 2013 EMH2407 n-channel power mosfet 20v, 6a, 25m , dual emh8 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. features ? low on-resistance ? best suited for lib charging and discharging switch ? common-drain type ? 2.5v drive ? protection diode in speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 20 v gate-to-source voltage v gss 12 v drain current (dc) i d 6a drain current (pulse) i dp pw 10 s, duty cycle 1% 40 a allowable power dissipation p d when mounted on ceramic substrate (900mm 2 0.8mm) 1unit 1.3 w total dissipation p t when mounted on ceramic substrate (900mm 2 0.8mm) 1.4 w channel temperature tch 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7045-006 ordering number : ena1141d product & package information ? package : emh8 ? jeita, jedec : - ? minimum packing quantity : 3,000 pcs./reel packing type : tl marking electrical connection 8765 1234 tl 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain 6 : drain 7 : drain 8 : drain emh8 1 4 85 0.125 0.2 0.2 2.1 1.7 0.5 2.0 0.2 0.75 0.05 lg lot no. EMH2407-tl-h 91212 tkim/51612 tkim/90308 tiim/80608 tiim/31908pe tiim tc-00001276 no. a1141-1/7
electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 20 v zero-gate voltage drain current i dss v ds =20v, v gs =0v 1 a gate-to-source leakage current i gss v gs =8v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 0.5 1.3 v forward transfer admittance | yfs | v ds =10v, i d =3a 3 5 s static drain-to-source on-state resistance r ds (on)1 i d =3a, v gs =4.5v 13 19 25 m r ds (on)2 i d =3a, v gs =4v 14 20 26 m r ds (on)3 i d =1.5a, v gs =2.5v 16 28 39 m input capacitance ciss v ds =10v, f=1mhz 580 pf output capacitance coss 95 pf reverse transfer capacitance crss 75 pf turn-on delay time t d (on) see speci ed test circuit. 310 ns rise time t r 1020 ns turn-off delay time t d (off) 3000 ns fall time t f 2250 ns total gate charge qg v ds =10v, v gs =4.5v, i d =6a 6.3 nc gate-to-source charge qgs 0.83 nc gate-to-drain ?miller? charge qgd 1.9 nc diode forward voltage v sd i s =6a, v gs =0v 0.78 1.2 v switching time test circuit ordering information device package shipping memo EMH2407-tl-h emh8 3,000pcs./reel pb free and halogen free d.c. 1% pw=10 s p. g 50 g s d i d =3a r l =3.33 v dd =10v v out EMH2407 v in 4.5v 0v v in rg=2k rg EMH2407 no. a1141-2/7
EMH2407 no. a1141-3/7 drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a gate-to-source voltage, v gs -- v i d -- v gs drain current, i d -- a 0 2 4 1 3 5 6 0 0 it13201 it13202 0.1 0.4 0.2 0.6 0.5 0.3 0.8 0.7 0.9 1.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1 4 2 5 3 6 7 v ds =10v --25 c ta=75 c v gs =1.5v 1.8v 2.0v 25 c 4.0v 4.5v 2.5v 3.5v --60 --40 --20 0 20 40 60 80 100 120 140 160 0 10 30 20 50 60 40 v gs =2.5v, i d =1.5a v gs =4.5v, i d =3.0a v gs =4.0v, i d =3.0a gate-to-source voltage, v gs -- v r ds (on) -- v gs ambient temperature, ta -- c r ds (on) -- ta drain current, i d -- a sw time -- i d switching time, sw time -- ns ciss, coss, crss -- v ds drain current, i d -- a diode forward voltage, v sd -- v source current, i s -- a i s -- v sd drain-to-source voltage, v ds -- v ciss, coss, crss -- pf static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m 3 2 100 5 7 5 3 2 1000 7 0 it13203 0.2 0.4 0.6 1.2 1.0 0.8 156 4 3 278 0 10 20 30 50 40 60 ta=25 c it13204 it13205 it13206 0481216 2 6 10 14 18 20 0.01 0.1 7 5 3 2 2 1.0 7 5 3 2 it13208 0.1 2 2 1.0 7 5 3 10 7 5 3 0.1 2 0.01 57 23 1.0 2 57 3 ta= --25 c 75 c 25 c v ds =10v --25 c 25 c ta=75 c v gs =0v ciss coss crss f=1mhz 10 57 3 10 7 5 3 1000 7 5 3 2 7 5 3 2 0.1 2 1.0 357 it13207 v dd =10v v gs =4.5v t d (off) t r t f 10 23 57 t d (on) i d =1.5a 3a forward transfer admittance, | y fs | -- s | y fs | -- i d
EMH2407 no. a1141-4/7 total gate charge, qg -- nc gate-to-source voltage, v gs -- v v gs -- qg 01234567 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.5 4.0 it13209 it13210 v ds =10v i d =6a drain-to-source voltage, v ds -- v drain current, i d -- a 2 3 5 7 2 0.1 3 5 7 2 1.0 3 2 3 5 5 7 7 10 100 0.01 0.1 0.01 57 23 2 1.0 57 32 10 57 33 2 i dp =40a i d =6a operation in this area is limited by r ds (on). pw 10 s dc operation (ta=25 c ) 100 s 1ms 10ms 100ms a s o ta=25 c single pulse when mounted on ceramic substrate (900mm 2 ? 0.8mm) 1unit it13211 0 0 20 40 0.4 0.6 60 80 100 120 140 160 ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w 1.0 1.4 1.3 0.2 0.8 1.2 1.6 when mounted on ceramic substrate (900mm 2 ? 0.8mm) total dissipation 1unit
embossed taping speci cation EMH2407-tl-h EMH2407 no. a1141-5/7
outline drawing land pattern example EMH2407-tl-h mass (g) unit 0.008 * for reference mm unit: mm 0.4 0.3 0.5 1.9 EMH2407 no. a1141-6/7
note on usage : since the EMH2407 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner. EMH2407 ps no. a1141-7/7
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