SSM6G18NU 2010-09-30 1 silicon p channel mos type / silicon epitaxial schottky barrier diode SSM6G18NU power management switch applications ? combined a p-channel mosfet and a schottky barrier diode in o ne package. ? low r ds (on) and low v f r ds(on) = 261 m (max) (@v gs = -1.5v) r ds(on) = 185 m (max) (@v gs = -1.8 v) r ds(on) = 143 m (max) (@v gs = -2.5 v) r ds(on) = 112 m (max) (@v gs = -4.5 v) absolute maximum ratings mosfet ( ta = 25c ) characteristics symbol rating unit drain-source voltage v dss ? 20 v gate-source voltage v gss 8 v dc i d (note 1) ? 2.0 drain current pulse i dp (note 1) ? 4.0 a p d (note 2) 1 power dissipation t 10s 2 w channel temperature t ch 150 c schottky barrier diode(ta = 25c) characteristics symbol rating unit reverse voltage v r 30 v average forward current i o 1.0 a peak one cycle surge forward current(10ms) i fsm 5.0 a junction temperature t j 150 c mosfet and diode (ta = 25c) characteristics symbol rating unit storage temperature range t stg ? 55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temper ature/current/voltage, etc. ) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing t he toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and ind ividual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: the junction temperature should not exceed 150 c during use. note 2: mounted on fr4 board. (25.4 mm 25.4 mm 1.6 mm, cu pad: 645mm 2 ) unit: mm udfn6 jedec ? jeita ? toshiba 2-2y1a weight: 8.5 mg (typ.) 1. anode 2. nc 3. drain 4. source 5. gate 6. cathode 2.0 :? 0.1 2.0 :? 0.1 0.750.05 b a 1 0.3 :? 0.075 0.65 23 0.275 :? 0.1 0.9 :? 0.075 0.05 ba m *bottom view 54 0.95 6 0.13 0.65 :? 0.075 0.65 :? 0.075 0.05 ba m 0.275 :? 0.1 0.86 0.86 0.65 0 c> 0.05
SSM6G18NU 2010-09-30 2 mosfet electrical characteristics (ta = 25c) characteristic symbol test conditions min typ. max unit v (br) dss i d = -1 ma, v gs = 0 v -20 ? ? drain-source breakdown voltage v (br) dsx i d = -1 ma, v gs = 5 v (note 4) -15 ? ? v drain cut-off current i dss v ds = -20 v, v gs = 0 v ? ? -1 a gate leakage current i gss v gs = 8 v, v ds = 0 v ? ? 1 a gate threshold voltage v th v ds = -3 v, i d = -1 ma -0.3 ? -1.0 v forward transfer admittance ? y fs ? v ds = -3 v, i d = -1.0 a (note 3) 2.7 5.4 ? s i d = -1.0 a, v gs = -4.5 v (note 3) ? 89 112 i d = -0.6a, v gs = -2.5 v (note 3) ? 107 143 i d = -0.4 a, v gs = -1.8 v (note 3) ? 128 185 drain?source on-resistance r ds (on) i d = -0.2 a, v gs = -1.5 v (note 3) ? 148 261 m input capacitance c iss ? 270 ? output capacitance c oss ? 40 ? reverse transfer capacitance c rss v ds = -10 v, v gs = 0 v, f = 1 mhz ? 32 ? pf total gate charge q g ? 4.6 ? gate-source charge q gs1 ? 0.4 ? gate-drain charge q gd v dd = ? 10 v, i d = ? 2.0 a v gs = ? 4.5 v ? 0.9 ? nc turn-on time t on ? 17 ? switching time turn-off time t off v dd = -10 v, i d = -1.0 a v gs = 0 to -2.5 v, r g = 4.7 ? 43 ? ns drain-source forward voltage v dsf i d = 2.0 a, v gs = 0 v (note 3) ? 0.86 1.2 v note 3: pulse test note 4: if a forward bias is applied between gate and source, this device enters v(br)dsx mode. note that the drain-source breakdown voltage is lowered in this mode switching time test circuit precaution v th can be expressed as voltage between gate and source when low operating current value is i d = - 1ma for this product. for normal switching operation, v gs (on) requires higher voltage than v th and v gs (off) requires lower voltage than v th . (relationship can be established as follows: v gs (off) < v th < v gs (on) ) please take this into consideration for using the device. t on t off (b) v in (c) v out 0 v ? 2.5 v v dd v ds (on) t r t f 90% 90% 10% 10% (a) test circuit v dd = ? 10 v r g = 4.7 duty < = 1% v in : t r , t f < 5 ns common source ta = 25c 0 ? 2.5 v in out v dd 10 s r g
SSM6G18NU 2010-09-30 3 schottky barrier diode electrical characteristics (ta = 25c) characteristics symbol test conditions min typ. max unit v f (1) i f = 100 ma ? 0.31 ? v f (2) i f = 200 ma ? 0.36 ? v f (3) i f = 500 ma ? 0.38 0.45 forward voltage v f (4) i f = 1000 ma 0.48 0.58 v reverse current i r v r = 30 v ? 5 50 a total capacitance c t v r = 0 v, f = 1 mhz ? 120 ? pf precaution the schottky barrier diode in this device has large reverse cu rrent leakage compared to typical switching diodes. thus, excessive operating temperature or voltage may cause thermal runaway. to avoid this problem, be sure to take both forward and reverse loss into consideration. handling precaution when handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. thermal resistance r th (ch-a) and power dissipation p d vary depending on board material, board area, board thickn ess and pad area. when using this device, please take heat dissipation into consideration marking(top view) equivalent ci rcuit(top view) pin condition(top view) 5 1 3 ke2 2 4 6 a d nc g s c polarity marking (on the top) *electrodes : on the bottom polarity marking 1 3 2 5 4 6 c d
SSM6G18NU 2010-09-30 4 b? mosfet drain?source voltage v ds (v) i d ? v ds drain current i d (a) 0 -3 0 -0.2 -0.4 -0.6 -1 -2 -0.8 -4 -1.8 v v gs = -1.5 v -2.5 v -5 -4.5 v -1 common source ta = 25 c pulse test gate?source voltage v gs (v) i d ? v gs drain current i d (a) -10 0 -0.1 -1 -0.001 -0.01 -0.0001 -2.0 -1.0 common source v ds = -3 v pulse test -25 c ta = 100 c 25 c drain?source on-resistance r ds (on) (m
) 0 -2 -4 -6 gate?source voltage v gs (v) 0 r ds (on) ? v gs -8 200 400 100 300 i d = -1.0 a common source pulse test - ? 25 c 25 c ta = 100 c -4.0 r ds (on) ? i d drain current i d (a) drain?source on-resistance r ds (on) (m
) 0 -1.0 -2.0 0 -3.0 300 100 200 v gs = -4.5 v -1.5 v -2.5 v -1.8 v 400 common source ta = 2 5 c pulse test ambient temperature ta (c) r ds ( on ) ? ta drain?source on-resistance r ds (on) (m
) 0 ? 50 0 50 150 100 400 100 200 300 i d = -1.0 a / v gs = -4.5 v -0.2 a / -1.5 v -0.6 a / -2.5 v -0.4 a / -1.8 v common source pulse test ambient temperature ta (c) v th ? ta gate threshold voltage v th (v) -1.0 0 ? 50 0 150 -0.5 50 100 common source v ds = -3 v i d = -1 ma
SSM6G18NU 2010-09-30 5 forward transfer admittance ? y fs ? (s) |y fs | ? i d 0.1 -10 1 10 -0.1 -1 3 0.3 -0.01 common source v ds = -3 v ta = 25c pulse test drain current i d (a) drain reverse current i dr (a) drain?source voltage v ds (v) i dr ? v ds 10 0 0.1 1 0.001 0.01 0.5 1.0 1.5 common source v gs = 0 v pulse test g d s i dr -25 c ta =100 c 25 c drain-source voltage v ds (v) c ? v ds capacitance c (pf) 10 -0.1 -1 -10 -100 100 1000 300 30 common source ta = 25 c f = 1 mhz v gs = 0 v drain current i d (a) switching time t (ns) t ? i d 1 -0.001 1000 -0.1 10000 -1 -10 100 10 -0.01 t off t f t on t r common source v dd = -10 v v gs = 0 to -2.5 v ta = 25 c r g = 4.7 total gate charge qg (nc) dynamic input characteristic gate?source voltage v gs (v) 0 0 4 8 -4 -8 10 -6 -2 2 6 common source i d = -2.0 a ta = 25c v dd = - 16 v v dd = - 10 v c iss c oss c rss
SSM6G18NU 2010-09-30 6 r th ? t w 0.001 0.01 0.1 1 10 100 1000 1 10 100 1000 pulse width t w (s) transient thermal impedance rth (c/w) a b single pulse a. mounted on f4 board (25.4 mm 25.4 mm 1.6 mm, cu pad: 645 mm 2 ) b. mounted on f4 board (25.4 mm 25.4 mm 1.6 mm, cu pad: 2.13 mm 2 ) ambient temperature ta (c) p d ? ta power dissipation p d (mw) 1000 0 200 120 100 140 400 800 160 80 60 40 20 0 -20 -40 a 600 b 1200 1400 a: mounted on fr4 board (25.4mm 25.4mm 1.6mm , cu pad : 645 mm 2 ) b: mounted on fr4 board (25.4mm 25.4mm 1.6mm , cu pad : 2.13mm 2 )
SSM6G18NU 2010-09-30 7 schottky barrier diode :? :? :? :?:?:?:?:? :?:?:?:? :?:?:? :? :?:? :?:?:? :?:?:?:? :? :?:?:? :?:?:? :?:?:? :?:?:? :?:?:? :?:?:? :? :? :? :? :?:? :?:?:? :?:?:?:? :? :? :?:? :?:? :?:? :?:? :?:? :?:|:?:?:?:?:?:w:w:?:?:?:?:?::? :? :? :w::?:?:? :?:|:?:?:?:?:?:w:-:|::?:?:?:?:w:- :? :w::-:? :?:?:-:?:?:a:?:w:w:?:?:?:?:?::? :? c :w:::?:? :?:?:-:?:?:a:?:w:-:|::?:?:?:?:w:- :? :w::-:? :?:?:?:?:?=? :?:?=? :?:?=? :?:?:?:?:?=? :?:?=? :?:?=? :?=? :?:?:?=? :? :? :? :? :?:? :?:?:? :?:?:?:? :? :? :?:? :?:? :?:? :?:? :?:? :?:?:-:?:?:a:?:w:-:|::?:?:?:?:w:- :? :w::-:? :?:|:?:?::w:?:?::?:?:?:?:?::?:? :? c :w::?:?:? :?:?:?::?:? :?:?:?:?:?=?
SSM6G18NU 2010-09-30 8 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (col lect ively ?toshiba?), reserve the right to make changes to the in formation in this document, and related hardware, software a nd systems (collectively ?product?) without notice. ? this document and any information herein may not be reprodu c ed without prior written permission from toshiba. even with toshiba?s written permission, reproduc tion is permissible only if reproducti on is without alteration/omission. ? though toshiba works continually to improve product?s qualit y and reliability, product can malfunction or fail. customers a re responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corrupti on. before customers use the product, create designs including the product, or incorporate the product into their own applicati ons, cu stomers must also refer to and comply with (a) the latest versions of all relevant toshiba information, including without limitat ion, this document, the specifications, the data sheets and app lication notes for product and the precautions and condi tions set forth in the ?toshiba semiconductor reliability han dbook? and (b) the instructions for the application with which the product wil l be us ed with or for. customers are solely responsible for all aspe cts of their own product design or applications, including but not limi ted to (a) determining the appropriateness of the use of thi s product in such design or applications; (b) eval uating and determining the applicability of any info rmation contained in this document, or in c harts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operat in g parameters for such designs and applications. toshiba assumes no liability for customers? product design or applications. ? product is intended for use in general el ectronics applications (e.g., computers, personal equipment, office equipment, measur ing equipment, industrial robots and home electroni cs appliances) or for specif ic applications as expre ssly stated in this document . product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality a nd/or reliability and/or a malfunction or failure of which may ca use loss of human life, bodily injury, serious property damage o r se rious public impact (?unintended use?). unintended use includes, wit hout limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic s ignaling equipment, equipment used to control combustions or explosions, safety dev ices, elevators and escalato rs, devices related to el ectric power, and equipment used in finance-related fields. do n ot use product for unintended use unless specifically permitted in thi s document. ? do not disassemble, analyze, reverse-engineer, alter, modif y, translate or copy product, whether in whole or in part. ? product shall not be used for or incorporated into any prod ucts or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. ? the information contained herein is pres ented only as guidance for product use. no re sponsibility is assumed by toshiba for an y infringement of patents or any other intellectual property ri ghts of third parties that may result from the use of product. no license to any intellectual property right is granted by this document , whether express or implied, by estoppel or otherwise. ? a bsent a written signed agreement, except as provid ed in the relevant terms and conditions of sale for product, and to the maximum extent allowable by law, t oshiba (1) assumes no liability whatsoever, including without limitation, indirect, co nsequential, special, or incidental damages or loss, including without limitation, loss of profit s, loss of opportunities, business interruption and loss of data, and (2) disclaims any and all express or implied war ranties and conditions related to sale, use of product, or information, including warran ties or conditions of merchantability, fitness for a particular purpose, accuracy of information, or n oninfringement. ? do not use or otherwise make available product or related so ftware or technology for any military purposes, including wit hout limitation, for the design, development, use, stockpiling or m anufacturing of nuclear, chemical , or biological weapons or missi le technology products (mass destruction w eapons). product and related software and technology may be con trolled under the japanese foreign exchange and foreign trade law and the u. s. expor t administration regulations. ex port and re-export of product or related software or technology are strictly prohibited exc ept in compliance with all applicable export laws and regu lations. ? please contact your toshiba sales representative for details as to environmental matters such as the rohs compatibility of pro duct. please use product in compliance with all applicable laws and regula tions that regulate the inclusion or use of controlled subs tances, including without limitation, the eu rohs directive. toshiba assumes no liability for damages or losses occurring as a result o f noncompliance with applicable laws and regulations.
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