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| mosfet metaloxidesemiconductorfieldeffecttransistor coolmos?ce 600vcoolmos?cepowertransistor ipx60r800ce datasheet rev.2.0 final powermanagement&multimarket
2 600vcoolmos?cepowertransistor IPD60R800CE,ipa60r800ce rev.2.0,2014-09-25 final data sheet dpak to-220fp 1description coolmos?isarevolutionarytechnologyforhighvoltagepower mosfets,designedaccordingtothesuperjunction(sj)principleand pioneeredbyinfineontechnologies.coolmos?ceisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinconsumerandlightingmarketsbystillmeetinghighest efficiencystandards.thenewseriesprovidesallbenefitsofafast switchingsuperjunctionmosfetwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket. features ?extremelylowlossesduetoverylowfomrdson*qgandeoss ?veryhighcommutationruggedness ?easytouse/drive ?pb-freeplating,halogenfreemoldcompound ?qualifiedforconsumergradeapplications applications pfcstages,hardswitchingpwmstagesandresonantswitchingstages fore.g.pcsilverbox,adapter,lcd&pdptvandlighting. pleasenote:formosfetparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. table1keyperformanceparameters parameter value unit v ds @ t j,max 650 v r ds(on),max 800 m w q g.typ 17.2 nc i d,pulse 15.7 a e oss @400v 1.6 j body diode di/dt 500 a/s type/orderingcode package marking relatedlinks IPD60R800CE pg-to 252 ipa60r800ce pg-to 220 fullpak 6r800ce see appendix a tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 3 600vcoolmos?cepowertransistor IPD60R800CE,ipa60r800ce rev.2.0,2014-09-25 final data sheet tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 appendix a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 4 600vcoolmos?cepowertransistor IPD60R800CE,ipa60r800ce rev.2.0,2014-09-25 final data sheet 2maximumratings at t j =25c,unlessotherwisespecified table2maximumratings values min. typ. max. parameter symbol unit note/testcondition continuous drain current 1) i d - - - - 5.6 3.5 a t c =25c t c =100c pulsed drain current 2) i d,pulse - - 15.7 a t c =25c avalanche energy, single pulse e as - - 72 mj i d =1a; v dd =50v; see table 11 avalanche energy, repetitive e ar - - 0.17 mj i d =1a; v dd =50v; see table 11 avalanche current, repetitive i ar - - 1.0 a - mosfet dv/dt ruggedness dv/dt - - 50 v/ns v ds =0...480v gate source voltage (static) v gs -20 - 20 v static; gate source voltage (dynamic) v gs -30 - 30 v ac (f>1 hz) power dissipation (non fullpak) to-252 p tot - - 48 w t c =25c power dissipation (fullpak) to-220fp p tot - - 27 w t c =25c storage temperature t stg -40 - 150 c - operating junction temperature t j -40 - 150 c - mounting torque (fullpak) to-220fp - - - 50 ncm m2.5 screws continuous diode forward current i s - - 4.8 a t c =25c diode pulse current 2) i s,pulse - - 15.7 a t c =25c reverse diode dv/dt 3) dv/dt - - 15 v/ns v ds =0...400v, i sd <= i s , t j =25c see table 9 maximum diode commutation speed di f /dt - - 500 a/ m s v ds =0...400v, i sd <= i s , t j =25c see table 9 insulation withstand voltage for to-220fp v iso - - 2500 v v rms , t c =25c, t =1min 1) limited by t j max . maximum duty cycle d=0.75 2) pulse width t p limited by t j,max 3) identicallowsideandhighsideswitchwithidentical r g tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 5 600vcoolmos?cepowertransistor IPD60R800CE,ipa60r800ce rev.2.0,2014-09-25 final data sheet 3thermalcharacteristics table3thermalcharacteristics(fullpak)to-220fp values min. typ. max. parameter symbol unit note/testcondition thermal resistance, junction - case r thjc - - 4.6 c/w - thermal resistance, junction - ambient r thja - - 80 c/w leaded soldering temperature, wavesoldering only allowed at leads t sold - - 260 c 1.6mm (0.063 in.) from case for 10s table4thermalcharacteristicsto-252 values min. typ. max. parameter symbol unit note/testcondition thermal resistance, junction - case r thjc - - 2.6 c/w - thermal resistance, junction - ambient r thja - - 62 c/w device on pcb, minimal footprint thermal resistance, junction - ambient for smd version r thja - 35 45 c/w device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70m thickness) copper area for drain connection and cooling. pcb is vertical without air stream cooling. soldering temperature, wave & reflow soldering allowed t sold - - 260 c reflow msl1 tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 6 600vcoolmos?cepowertransistor IPD60R800CE,ipa60r800ce rev.2.0,2014-09-25 final data sheet 4electricalcharacteristics at t j =25c,unlessotherwisespecified table5staticcharacteristics values min. typ. max. parameter symbol unit note/testcondition drain-source breakdown voltage v (br)dss 600 - - v v gs =0v, i d =0.25ma gate threshold voltage v (gs)th 2.5 3.0 3.5 v v ds = v gs , i d =0.17ma zero gate voltage drain current i dss - - - 10 1 - m a v ds =600, v gs =0v, t j =25c v ds =600, v gs =0v, t j =150c gate-source leakage current i gss - - 100 na v gs =20v, v ds =0v drain-source on-state resistance r ds(on) - - 0.68 1.76 0.80 - w v gs =10v, i d =2a, t j =25c v gs =10v, i d =2a, t j =150c gate resistance r g - 11 - w f =1mhz,opendrain table6dynamiccharacteristics values min. typ. max. parameter symbol unit note/testcondition input capacitance c iss - 373 - pf v gs =0v, v ds =100v, f =1mhz output capacitance c oss - 27 - pf v gs =0v, v ds =100v, f =1mhz effective output capacitance, energy related 1) c o(er) - 18 - pf v gs =0v, v ds =0...480v effective output capacitance, time related 2) c o(tr) - 74 - pf i d =constant, v gs =0v, v ds =0...480v turn-on delay time t d(on) - 9 - ns v dd =400v, v gs =13v, i d =2.5a, r g =6.8 w ;seetable10 rise time t r - 7 - ns v dd =400v, v gs =13v, i d =2.5a, r g =6.8 w ;seetable10 turn-off delay time t d(off) - 50 - ns v dd =400v, v gs =13v, i d =2.5a, r g =6.8 w ;seetable10 fall time t f - 12 - ns v dd =400v, v gs =13v, i d =2.5a, r g =6.8 w ;seetable10 table7gatechargecharacteristics values min. typ. max. parameter symbol unit note/testcondition gate to source charge q gs - 2 - nc v dd =480v, i d =2.5a, v gs =0to10v gate to drain charge q gd - 8.9 - nc v dd =480v, i d =2.5a, v gs =0to10v gate charge total q g - 17.2 - nc v dd =480v, i d =2.5a, v gs =0to10v gate plateau voltage v plateau - 5.4 - v v dd =480v, i d =2.5a, v gs =0to10v 1) c o(er) isafixedcapacitancethatgivesthesamestoredenergyas c oss while v ds isrisingfrom0to80%v o(br)dss 2) c o(tr) isafixedcapacitancethatgivesthesamestoredenergyas c oss while v ds isrisingfrom0to80%v o(br)dss tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 7 600vcoolmos?cepowertransistor IPD60R800CE,ipa60r800ce rev.2.0,2014-09-25 final data sheet table8reversediodecharacteristics values min. typ. max. parameter symbol unit note/testcondition diode forward voltage v sd - 0.9 - v v gs =0v, i f =2.5a, t j =25c reverse recovery time t rr - 250 - ns v r =400v, i f =2.5a,d i f /d t =100a/s; see table 9 reverse recovery charge q rr - 1.8 - c v r =400v, i f =2.5a,d i f /d t =100a/s; see table 9 peak reverse recovery current i rrm - 16 - a v r =400v, i f =2.5a,d i f /d t =100a/s; see table 9 tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 8 600vcoolmos?cepowertransistor IPD60R800CE,ipa60r800ce rev.2.0,2014-09-25 final data sheet 5electricalcharacteristicsdiagrams diagram1:powerdissipation(nonfullpak) t c [c] p tot [w] 0 25 50 75 100 125 150 0 10 20 30 40 50 p tot =f( t c ) diagram2:powerdissipation(fullpak) t c [c] p tot [w] 0 25 50 75 100 125 150 0 5 10 15 20 25 30 p tot =f( t c ) diagram3:max.transientthermalimpedance(nonfullpak) t p [s] z thjc [k/w] 10 -5 10 -4 10 -3 10 -2 10 -1 10 -2 10 -1 10 0 10 1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse z thjc =f( t p );parameter: d=t p / t diagram4:max.transientthermalimpedance(fullpak) t p [s] z thjc [k/w] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse z thjc =f( t p );parameter: d=t p / t tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 9 600vcoolmos?cepowertransistor IPD60R800CE,ipa60r800ce rev.2.0,2014-09-25 final data sheet diagram5:safeoperatingarea(nonfullpak) v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =25c; d =0;parameter: t p diagram6:safeoperatingarea(fullpak) v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =25c; d =0;parameter: t p diagram7:safeoperatingarea(nonfullpak) v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =80c; d =0;parameter: t p diagram8:safeoperatingarea(fullpak) v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =80c; d =0;parameter: t p tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 10 600vcoolmos?cepowertransistor IPD60R800CE,ipa60r800ce rev.2.0,2014-09-25 final data sheet diagram9:typ.outputcharacteristics v ds [v] i d [a] 0 5 10 15 20 0 2 4 6 8 10 12 14 16 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =25c;parameter: v gs diagram10:typ.outputcharacteristics v ds [v] i d [a] 0 5 10 15 20 0 1 2 3 4 5 6 7 8 9 10 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =125c;parameter: v gs diagram11:typ.drain-sourceon-stateresistance i d [a] r ds(on) [ w ] 0 3 6 9 12 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10 v 5 v 5.5 v 6 v 6.5 v 7 v r ds(on) =f( i d ); t j =125c;parameter: v gs diagram12:drain-sourceon-stateresistance t j [c] r ds(on) [ w ] -50 -25 0 25 50 75 100 125 150 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 98% typ r ds(on) =f( t j ); i d =2.0a; v gs =10v tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 11 600vcoolmos?cepowertransistor IPD60R800CE,ipa60r800ce rev.2.0,2014-09-25 final data sheet diagram13:typ.transfercharacteristics v gs [v] i d [a] 0 2 4 6 8 10 12 0 2 4 6 8 10 12 14 16 150 c 25 c i d =f( v gs ); v ds =20v;parameter: t j diagram14:typ.gatecharge q gate [nc] v gs [v] 0 5 10 15 20 0 1 2 3 4 5 6 7 8 9 10 120 v 480 v v gs =f( q gate ); i d =2.5apulsed;parameter: v dd diagram15:forwardcharacteristicsofreversediode v sd [v] i f [a] 0.0 0.5 1.0 1.5 2.0 10 -1 10 0 10 1 10 2 25 c 125 c i f =f( v sd );parameter: t j diagram16:avalancheenergy t j [c] e as [mj] 25 50 75 100 125 150 0 10 20 30 40 50 60 70 80 e as =f( t j ); i d =1.0a; v dd =50v tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 12 600vcoolmos?cepowertransistor IPD60R800CE,ipa60r800ce rev.2.0,2014-09-25 final data sheet diagram17:drain-sourcebreakdownvoltage t j [c] v br(dss) [v] -75 -50 -25 0 25 50 75 100 125 150 175 520 540 560 580 600 620 640 660 680 700 v br(dss) =f( t j ); i d =0.25ma diagram18:typ.capacitances v ds [v] c [pf] 0 100 200 300 400 500 10 0 10 1 10 2 10 3 10 4 ciss coss crss c =f( v ds ); v gs =0v; f =1mhz diagram19:typ.cossstoredenergy v ds [v] e oss [j] 0 100 200 300 400 500 0.0 0.5 1.0 1.5 2.0 2.5 e oss = f (v ds ) tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 13 600vcoolmos?cepowertransistor IPD60R800CE,ipa60r800ce rev.2.0,2014-09-25 final data sheet 6testcircuits table9diodecharacteristics table10switchingtimes table11unclampedinductiveload tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d 14 600vcoolmos?cepowertransistor IPD60R800CE,ipa60r800ce rev.2.0,2014-09-25 final data sheet 7packageoutlines figure1outlinepg-to252,dimensionsinmm/inches tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d 15 600vcoolmos?cepowertransistor IPD60R800CE,ipa60r800ce rev.2.0,2014-09-25 final data sheet figure 2 outline pg-to 220 fullpak, dimensions in mm/inches tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d '$ + 9 ) ; 9$ * =# = . 3 @3 .# 0 )# ' ),/ '# )1(7/*06 01" z8b00003319 2.5 4*8,5,10 04 05-05-2014 ,557* )'6* *7412*'0 241-*(6,10 1.130 0.177 min 0.095 0.026 0.016 0.617 0.037 0.092 0.394 0.503 0.116 0.124 0.111 0.353 2.86 2.42 2.54 (bsc) 5.08 28.70 0.95 15.67 0.40 0.65 10.00 2.83 3.15 2.95 12.78 8.97 3 29.75 0.90 0.63 1.51 16.15 3.50 3.38 3.45 13.75 10.65 9.83 /,..,/*6*45 min 4.50 2.34 max 4.90 2.85 0.113 0.100 (bsc) 0.200 3 1.171 0.059 0.636 0.025 0.035 0.419 0.136 0.133 0.138 0.541 0.387 0 ,0(+*5 0.193 max 0.112 5('.* 5mm 0 2.5 9# 0.0370.95 1.38 0.054 9& 0.0260.65 1.51 0.059 9% 0.0260.65 1.38 0.054 dimensions do not include mold flash, protrusions or gate burrs 16 600v coolmos? ce power transistor IPD60R800CE, ipa60r800ce rev. 2.0, 2014-09-25 final data sheet 8 appendix a table 12 related links ? ifx coolmos tm ce webpage: www.infineon.com ? ifx coolmos tm ce application note: www.infineon.com ? ifx coolmos tm ce simulation model: www.infineon.com ? ifx design tools: www.infineon.com tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d '$ + 9 ) ; 9$ * =# = . 3 @3 .# 0 )# ' ),/ '# )1(7/*06 01" z8b00003319 2.5 4*8,5,10 04 05-05-2014 ,557* )'6* *7412*'0 241-*(6,10 1.130 0.177 min 0.095 0.026 0.016 0.617 0.037 0.092 0.394 0.503 0.116 0.124 0.111 0.353 2.86 2.42 2.54 (bsc) 5.08 28.70 0.95 15.67 0.40 0.65 10.00 2.83 3.15 2.95 12.78 8.97 3 29.75 0.90 0.63 1.51 16.15 3.50 3.38 3.45 13.75 10.65 9.83 /,..,/*6*45 min 4.50 2.34 max 4.90 2.85 0.113 0.100 (bsc) 0.200 3 1.171 0.059 0.636 0.025 0.035 0.419 0.136 0.133 0.138 0.541 0.387 0 ,0(+*5 0.193 max 0.112 5('.* 5mm 0 2.5 9# 0.0370.95 1.38 0.054 9& 0.0260.65 1.51 0.059 9% 0.0260.65 1.38 0.054 dimensions do not include mold flash, protrusions or gate burrs 17 600v coolmos? ce power transistor IPD60R800CE, ipa60r800ce rev. 2.0, 2014-09-25 final data sheet revision history IPD60R800CE, ipa60r800ce revision: 2014-09-25, rev. 2.0 previous revision revision date subjects (major changes since last revision) 2.0 2014-09-25 release of final version we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: erratum@infineon.com published by infineon technologies ag 81726 mnchen, germany ? 2014 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. the infineon technologies component described in this data sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d '$ + 9 ) ; 9$ * =# = . 3 @3 .# 0 )# ' ),/ '# )1(7/*06 01" z8b00003319 2.5 4*8,5,10 04 05-05-2014 ,557* )'6* *7412*'0 241-*(6,10 1.130 0.177 min 0.095 0.026 0.016 0.617 0.037 0.092 0.394 0.503 0.116 0.124 0.111 0.353 2.86 2.42 2.54 (bsc) 5.08 28.70 0.95 15.67 0.40 0.65 10.00 2.83 3.15 2.95 12.78 8.97 3 29.75 0.90 0.63 1.51 16.15 3.50 3.38 3.45 13.75 10.65 9.83 /,..,/*6*45 min 4.50 2.34 max 4.90 2.85 0.113 0.100 (bsc) 0.200 3 1.171 0.059 0.636 0.025 0.035 0.419 0.136 0.133 0.138 0.541 0.387 0 ,0(+*5 0.193 max 0.112 5('.* 5mm 0 2.5 9# 0.0370.95 1.38 0.054 9& 0.0260.65 1.51 0.059 9% 0.0260.65 1.38 0.054 dimensions do not include mold flash, protrusions or gate burrs |
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