s mhop microelectronics c orp. a product summary v dss i d r ds(on) (m ) max 30v 4.2a 52 @ vgs= 2.5v 40 @ vgs= 4.5v features super high dense cell design for low r ds(on) . rugged and reliable. suface mount package. n-channel enhancement mode field effect transistor www.samhop.com.tw dec,17,2013 1 details are subject to change without notice. STS3426 ver 1.1 green product thermal characteristics 100 thermal resistance, junction-to-ambient r ja a c/w s g d symbol v ds v gs i dm a i d units parameter 30 4.2 17 v v 12 gate-source voltage drain-source voltage absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous -pulsed b a t a =25 c w p d c 1.25 -55 to 150 t a =25 c maximum power dissipation operating junction and storage temperature range t j , t stg t a =70 c 3.4 a t a =70 c 0.8 w a a sot 26 top view d d g 1 2 3 d d s 6 5 4 31 @ vgs= 10v
STS3426 v gs = 12v , v ds =0v 30 1 100 0.5 30 14 406 73 58 10 17.5 18 5.3 v ds =15v,v gs =0v v dd =15v i d =1a v gs =4.5v r gen = 6 ohm v gs =4.5v , i d =2.1a v ds =5v , i d =2.1a v ds =24v , v gs =0v v gs =0v , i d =250ua v gs =2.5v , i d =1.9a 38 0.8 1.5 40 52 symbol min typ max units bv dss v i gss na v gs(th) v g fs s c iss pf c oss pf c rss pf t d(on) ns t r ns t d(off) ns t f ns switching characteristics rise time turn-off delay time fall time turn-on delay time m ohm input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage reverse transfer capacitance on characteristics m ohm c c 7.1 q g nc total gate charge v ds =15v,i d =2.1a,v gs =4.5v www.samhop.com.tw dec,17,2013 2 1.2 3 nc q gs nc q gd gate-drain charge gate-source charge v ds =15v,i d =2.1a, v gs =4.5v drain-source diode characteristics v gs =0v,i s =1a 0.785 v sd diode forward voltage 1.2 v notes _ _ _ f=1.0mhz v ds =v gs , i d =250ua ver 1.1 v ds =15v,i d =2.1a,v gs =2.5v 5.2 nc a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. 25 v gs =10v , i d =2.4a 31 m ohm
www.samhop.com.tw dec,17,2013 3 tj( c ) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current figure 4. on-resistance variation with drain vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation tj, junction temperature( c ) figure 6. breakdown voltage variation and gate voltage current and temperature with temperature with temperature STS3426 ver 1.1 15 12 9 6 3 0 0 0.5 1.0 1.5 2.0 2.5 3.0 vgs=2v vgs=1 .5v v gs=4.5v vgs=2.5v 10 8 6 4 2 0 0 0.4 2.4 2.0 1.6 1.2 0.8 -55 c 25 c tj=125 c 60 50 40 30 20 10 1 1 0 2.0 1.8 1.6 1.4 1.2 1.0 0 0 100 75 25 50 125 15 v gs =4.5v i d =2.1a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua vgs=4.5v vgs=2.5 v 15 12 9 6 3 v gs =2.5v i d =1.9a v ds =v gs i d =250ua
www.samhop.com.tw dec,17,2013 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area gate-source voltage variation with source current STS3426 ver 1.1 0.1 1 10 30 10 1 0.1 0.03 80 v gs =4.5v single pulse t a =25 c r d s ( o n) l i m it 90 75 60 45 30 15 0 0.5 3.0 3.5 4.0 4.5 0 2.5 2.0 1.5 1.0 i d =2.1a 25 c 75 c 125 c 20.0 10.0 1.0 0 0.3 0.6 0.9 1.2 1.5 5.0 25 c 125 c 75 c crss coss ciss 600 500 400 300 200 100 0 10 15 20 25 30 0 5 10 8 6 4 2 0 024 6 81012 14 16 v ds =15v i d =2.1a 110 100 1 10 100 300 vds=15v,id=1a vgs=4.5v td(on) tr td(off ) tf 100ms dc 10 m s 10 s 1 ms 100us 10 u s
www.samhop.com.tw dec,17,2013 5 STS3426 ver 1.1 norm aliz ed transien t therma l r esis tance square wave pulse duration(sec) figure 13. normalized thermal transient impedance curve 0.01 0. 1 1 10 0.0000 1 0.000 1 0.001 0.01 0. 1 1 10 100 1000 single pulse t 1 t 2 1. r thj a (t)=r (t) * r ja 2. r ja =s ee datasheet 3. t jm- t a =p dm *r ja (t) 4. duty cycle, d=t 1 /t 2 th th th 0.01 0.02 0.5 0.2 0.1 0.05 p dm
www.samhop.com.tw dec,17,2013 6 STS3426 ver 1.1 package outline dimensions sot 26 l detail "a" millimeters inches symbols d e 2.700 3.100 2.500 3.100 e1 1.400 1.800 e e1 b 0.300 0.500 c 0.090 0.200 a a1 0.000 0.130 0.700 1.120 l1 l l1 0 o 10 o 0.106 0.122 0.098 0.122 0.055 0.071 0.012 0.020 0.004 0.008 0.000 0.005 0.028 0.044 0 o 10 o min max min max 0.950 ref. d e1 e e1 e b 1 2 3 6 54 a a1 1.900 ref. 0.037 ref. 0.075 ref. 0.300 0.550 0.012 0.022 0.350 0.800 0.014 0.031 detail "a"
www.samhop.com.tw dec,17,2013 7 STS3426 ver 1.1 sot-26 tape and reel data sot-26 carrier tape sot-26 reel so t 2 6 a 4.00 2.00 0.10 + 0.05 4.00 + 0.10 + y 1.00 +0.1 0 0.00 y 1.50 +0.1 0 0.00 1.75 0.10 + 3.50 0.05 + 8. 0 + 0.30 a b b 0.25 + 0.05 r0 .3 5 ma x r0.3 ko 1. 5 + 0. 1 bo 3. 2 + 0. 1 section a-a 3. 3 + 0. 1 5 ma x r0.3 r0. 3 section b-b 178.0 + 0. 5 y 60 + 0. 5 y 9. 0 1.50 +1.5 -0 2. 2 + 0. 5 10.6 y 13. 5 + 0. 5 scal e 2 :1
8 sot-26 xxx samhop logo STS3426 ver 1.1 www.samhop.com.tw dec,17,2013 3426 product no. production year (2009 = 9, 2010 = a.....) production month (1,2 ~ 9, a,b,c) smc internal code no. (a,b,c...z) top marking definition
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