p p ja 3416 march 10,2014 - rev.00 page 1 2 0 v n - c hannel enhancement mode mosfet voltage 2 0 v current 5.8 a sot - 23 unit: inch(mm) f eatures ? r ds(on) , v gs @ 4.5 v , i d @ 5.8 a< 2 7 m ? ? r ds(on) , v gs @ 2 .5 v , i d @ 3.2 a< 40 m ? ? r ds(on) , v g s @ 1.8 v , i d @ 1.6 a < 8 0 m ? ? advanced trench process technology ? specially designed for switch load, pwm application, etc. . ? lead free in compliance wit h eu rohs 2011/65/eu directive . ? green molding compound as per iec61249 std. (halogen free) mechan ical data ? case: sot - 23 package ? terminals : solderable per mil - std - 750, method 2026 ? approx. weight: 0.0003 ounces, 0.0084 grams ? marking: a16 parameter symbol limit units drain - source voltage v ds 20 v gate - source voltage v gs + 12 v continuous drai n current i d 5.8 a pulsed drain current i dm 2 3 .2 a power dissipation t a =25 o c p d 1. 25 w derate above 25 o c 1 0 m w/ o c operatin g junction an d storage temperature range t j ,t stg - 55~150 o c typical thermal resistance - j unction to ambient (note 3 ) r ja 10 0 o c /w maximum ratings and thermal characteristics (t a =25 o c unless otherwise noted)
p p ja 3416 march 10,2014 - rev.00 page 2 e lectrical c haracteristics (t a =25 o c unless otherwise noted) parameter symbol test condition min. typ. max. units static drain - source breakdown voltage b v dss v gs = 0 v, i d = 25 0ua 2 0 - - v gate threshold voltage v gs(th) v ds =v gs , i d = 250 ua 0. 5 0.7 7 1. 2 v drain - source on - state resistance r ds(on) v gs = 4.5 v, i d = 5.8 a - 23 2 7 m gs = 2.5 v, i d = 3.2 a - 32 40 v gs = 1.8 v, i d = 1.6 a - 61 8 0 zero gate voltage drain curr ent i dss v ds = 20 v, v gs =0v - 0.01 1 u a gate - source leakage current i gss v gs = + 12 v, v ds =0v - + 10 + 10 0 n a dynamic total gate charge q g v ds = 10 v, i d = 5.8 a, v gs = 4.5v (note 1 , 2 ) - 6.7 - nc gate - source charge q gs - 1 .2 - gate - drain charge q gd - 2 - input ca pacitance ciss v ds = 10 v, v gs = 0 v, f=1.0mhz - 513 - pf output capacitance coss - 75 - reverse transfer capacitance crss - 59 - switching turn - on delay time t d (on) v dd = 10 v, i d = 5.8 a, v g s = 4.5v, r g = 6 (note 1 , 2 ) - 6 - ns turn - on rise time tr 56 turn - o ff delay time t d (off) - 23 - us turn - o ff fall time tf - 13 - drain - source diode maximum continuous drain - source diode forward current i s --- - - 1. 5 a diode forward voltage v sd i s = 1. 0 a, v gs = 0 v - 0. 7 1 1.2 v notes : 1. pulse width < 300us, duty cycle < 2% 2. essentially independent of operating temperature typical characteristics . 3. r ? ja is the sum of the junction - to - case and case - to - ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins m ounted on a 1 inch fr - 4 with 2oz . square pad of copper 4. the maximum current rating is package limited
p p ja 3416 march 10,2014 - rev.00 page 3 t ypical characteristic curves fig.1 on - region characteristics fig. 2 transfer characterist ics fig. 3 on - resistance vs. drain current fig. 4 on - resistance vs. junction temperature fig. 5 on - resistance variation with vgs. fig. 6 body d i ode characteristics
p p ja 3416 march 10,2014 - rev.00 page 4 t ypical characteristic curves fig. 7 gate - charge characteristics fig. 8 threshold voltage variation with temperature . fig. 9 capacitance vs. drain - source voltage.
p p ja 3416 march 10,2014 - rev.00 page 5 part no packing code version mounting pad layout part n o packing code package type packing type marking ver sion PJA3416_r1_00001 sot - 23 3k pcs / 7
p p ja 3416 march 10,2014 - rev.00 page 6 disclaimer
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