p p ja 3415 ae january 22,2015 - rev.01 page 1 2 0 v p - c hannel enhancement mode mosfet C esd protected voltage - 2 0 v current - 4.3 a sot - 23 unit : inch(mm) f eatures ? r ds(on) , v gs @ - 4.5 v , i d @ - 4.3 a< 50 m ? ? r ds(on) , v gs @ - 2 .5 v , i d @ - 4.0 a< 58 m ? ? r ds( on) , v gs @ - 1.8 v , i d @ - 2 .4 a< 73 m ? ? advanced trench process technology ? specially designed for switch load, pwm application, etc ? esd protected 2kv hbm ? lead free in compliance with eu rohs 2011/65/eu directive ? green molding compound as per iec61249 std. mechanical d ata ? case: sot - 23 package ? terminals: solderable per mil - std - 750, method 2026 ? approx. weight: 0.0003 ounces, 0.0084 grams ? marking: a5ae parameter symbol limit units drain - source voltage v ds - 20 v gate - source voltage v gs + 8 v continuous drain curre nt i d - 4. 3 a pulsed drain current i dm - 1 7.2 a power dissipation t a =25 o c p d 1. 25 w derate above 25 o c 1 0 m w/ o c operatin g junction an d storage temperature range t j ,t stg - 55~150 o c typical thermal resistance - j unction to ambient (note 3 ) r ja 10 0 o c /w maximum ratings and thermal characteristics (t a =25 o c unless otherwise noted)
p p ja 3415 ae january 22,2015 - rev.01 page 2 e lectrical c haracteristics (t a =25 o c unless otherwise noted) parameter symbol test condition min. typ. max. units static drain - source breakdown voltage bv dss v gs = 0 v, i d = - 25 0ua - 2 0 - - v gate threshold voltage v gs(th) v ds =v gs , i d = - 250 ua - 0. 4 - 0. 55 - 1.0 v drain - source on - state resistance r ds(on) v gs = - 4.5 v, i d = - 4.3 a - 42 50 m gs = - 2.5 v, i d = - 4.0 a - 49 58 v gs = - 1.8 v, i d = - 2.4 a - 59 73 zero gate volta ge drain current i dss v ds = - 20 v, v gs =0v - - 0.01 - 1 u a gate - source leakage current i gss v gs = + 8 v, v ds =0v - + 6 + 10 u a dynamic (note 5 ) total gate charge q g v ds = - 10 v, i d = - 4. 3 a, v gs = - 4.5v (note 1 , 2 ) - 24 - nc gate - source charge q gs - 1.5 - gate - drain char ge q gd - 2.5 - input capacitance ciss v ds = - 10 v, v gs = 0 v, f=1.0mhz - 907 - pf output capacitance coss - 90 - reverse transfer capacitance crss - 70 - turn - on delay time t d (on) v dd = - 10 v, i d = - 4. 3 a, v g s = - 4.5v, r g = 6 (note 1 , 2 ) - 4 5 - ns turn - on rise time tr - 79 - turn - o ff delay time t d (off) - 193 - turn - o ff fall time tf - 826 - drain - source diode maximum continuous drain - source diode forward current i s --- - - - 1. 5 a diode forward voltage v sd i s = - 1. 0 a, v gs = 0 v - 0. 76 - 1.2 v notes : 1. pulse width < 300us, duty cycle < 2% 2. essentially independent of operating temperature typical characteristics . 3. r ? ja is the sum of the junction - to - case and case - to - ambient thermal resistance where the case thermal reference is de fined as the solder mounting surface of the drain pins m ounted on a 1 inch fr - 4 with 2oz . square pad of copper 4. the maximum current rating is package limited 5. guaranteed by design, not subject to product ion testing.
p p ja 3415 ae january 22,2015 - rev.01 page 3 t ypical characteristic curves f ig.1 on - region characteristics fig. 2 transfer characteristics fig. 3 on - resistance vs. drain current fig. 4 on - resistance vs. junction temperature fig. 5 on - resistance variation with vgs. fig. 6 body d i ode characteristics
p p ja 3415 ae january 22,2015 - rev.01 page 4 t ypical characteristic curves fig. 7 gate - charge characteristics fig. 8 threshold voltage variation with temperature . fig. 9 capacitance vs. drain - source voltage.
p p ja 3415 ae january 22,2015 - rev.01 page 5 part no packing code version mounting pad layout part n o packing code package type packin g type marking ver sion PJA3415AE_r1_00001 sot - 23 3k pcs / 7 0.031 min. (0.80) min. 0.037 (0.95) 0 . 0 4 3 ( 1 . 1 0 ) 0 . 0 7 8 ( 2 . 0 0 ) 0 . 0 3 5 m i n . ( 0 . 9 0 ) m i n . 0.043 (1.10) 0.106 (2.70)
p p ja 3415 ae january 22,2015 - rev.01 page 6 disclaimer
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