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  p PJA3413 february 17,2014-rev.00 page 1 20v p-channel enhancement mode mosfet voltage -20 v current -3.4a sot-23 unit: inch(mm) features ? r ds(on) , v gs @-4.5v, i d @-3.4a<82m ? ? r ds(on) , v gs @-2.5v, i d @-2.2a<110m ? ? r ds(on) , v gs @-1.8v, i d @-1.2a<146m ? ? advanced trench process technology ? specially designed for switch load, pwm application, etc ? lead free in compliance with eu rohs 2011/65/eu directive. ? green molding compound as per iec61249 std. (halogen free) mechanical data ? case: sot-23 package ? terminals: solderable per mil-std-750, method 2026 ? approx. weight: 0.0003 ounces, 0.0084 grams ? marking: a13 parameter symbol limit units drain-source voltage v ds -20 v gate-source voltage v gs + 12 v continuous drain current i d -3.4 a pulsed drain current i dm -13.6 a power dissipation t a =25 o c p d 1.25 w derate above 25 o c 10 mw/ o c operating junction and storage temperature range t j ,t stg -55~150 o c typical thermal resistance - junction to ambient (note 3) r ja 100 o c/w maximum ratings and thermal characteristics (t a =25 o c unless otherwise noted)
p PJA3413 february 17,2014-rev.00 page 2 electrical characteristics (t a =25 o c unless otherwise noted) parameter symbol test condition min. typ. max. units static drain-source breakdown voltage bv dss v gs =0v, i d =-250ua -20 - - v gate threshold voltage v gs(th) v ds =v gs , i d =-250ua -0.4 -0.65 -1.2 v drain-source on-state resistance r ds(on) v gs =-4.5v, i d =-3.4a - 65 82 m ? v gs =-2.5v, i d =-2.2a - 82 110 v gs =-1.8v, i d =-1.2a - 103 146 zero gate voltage drain current i dss v ds =-20v, v gs =0v - 0.01 -1 ua gate-source leakage current i gss v gs =+ 12v, v ds =0v - + 10 + 100 na dynamic total gate charge q g v ds =-10v, i d =-3.4a, v gs =-4.5v (note 1,2) - 7 - nc gate-source charge q gs - 1 - gate-drain charge q gd - 1.8 - input capacitance ciss v ds =-10v, v gs =0v, f=1.0mhz - 522 - pf output capacitance coss - 55 - reverse transfer capacitance crss - 40 - switching turn-on delay time td (on) v dd =-10v, i d =-3.4a, v gs =-4.5v, r g =6 ? (note 1,2) - 10 - ns turn-on rise time tr 4 - turn-off delay time td (off) - 34 - turn-off fall time tf 5 drain-source diode maximum continuous drain-source diode forward current i s --- - - -1.5 a diode forward voltage v sd i s =-1.0a, v gs =0v - 0.77 -1.2 v notes : 1. pulse width< 300us, duty cycle< 2% 2. essentially independent of operating temperature typical characteristics. 3. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins mounted on a 1 in ch fr-4 with 2oz. square pad of copper 4. the maximum current rating is package limited
p PJA3413 february 17,2014-rev.00 page 3 typical characteristic curves fig.1 on-region characteristics fig.2 transfer characteristics fig.3 on-resistance vs. drain current fig.4 on-resistance vs. junction temperature fig.5 on-resistance variation with vgs. fig.6 body diode characteristics
p PJA3413 february 17,2014-rev.00 page 4 typical characteristic curves fig.7 gate-charge characteristics fig.8 threshold voltage variation with temperature. fig.9 threshold voltage variation with temperature.
p PJA3413 february 17,2014-rev.00 page 5 part no packing code version mounting pad layout part no packing code package type packing type marking version PJA3413_r1_00001 sot-23 3k pcs / 7? reel a13 halogen free PJA3413_r2_00001 sot-23 12k pcs / 13? reel a13 halogen free
p PJA3413 february 17,2014-rev.00 page 6 disclaimer reproducing and modifying information of the docum ent is prohibited without permission from panjit international inc.. panjit international inc. reserves the rights to ma ke changes of the content herein the document anytime without notification. please refer to our website for the latest document. panjit international inc. disclaims any and all liabilit y arising out of the application or use of any product including damages incidentally and consequentially occurred. panjit international inc. does not assume any and a ll implied warranties, includi ng warranties of fitness for particular purpose, non-infringement and merchantability. applications shown on the herein document are ex amples of standard use and o peration. customers are responsible in comprehending the suitable use in particul ar applications. panjit international inc. makes no representation or warranty t hat such applications will be suitable for the specified use without further testing or modification. the products shown herein are not designed and authorized for equipments requiring high level of reliability or relating to human life and for any applications concerning life-saving or life-sustaining, such as medical instruments, transportation equipment, aerospace mach inery et cetera. customers using or selling these products for use in such applications do so at their ow n risk and agree to fully indemnify panjit international inc. for any damages resulting from such improper use or sale. since panjit uses lot number as the tracking ba se, please provide the lot number for tracking when complaining.


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Price & Availability of PJA3413
DigiKey

Part # Manufacturer Description Price BuyNow  Qty.
PJA3413_R1_00001-ML
5375-PJA3413_R1_00001-MLTR-ND
MOSLEADER P -20V -3.4A SOT-23 150000: USD0.0245
75000: USD0.02723
30000: USD0.02902
15000: USD0.03028
6000: USD0.03122
3000: USD0.03185
1000: USD0.03416
200: USD0.035
BuyNow
300000
PJA3413_R1_00001
3757-PJA3413_R1_00001CT-ND
PanJit Group SOT-23, MOSFET 9000: USD0.054
6000: USD0.05674
3000: USD0.05935
1000: USD0.10035
500: USD0.13526
100: USD0.1658
10: USD0.328
1: USD0.47
BuyNow
15312

Mouser Electronics

Part # Manufacturer Description Price BuyNow  Qty.
PJA3413_R1_00001
241-PJA3413_R1_00001
PanJit Semiconductor MOSFET 20V P-Channel Enhancement Mode MOSFET 1: USD0.47
10: USD0.328
100: USD0.135
1000: USD0.101
3000: USD0.056
9000: USD0.054
99000: USD0.052
BuyNow
57689
PJA3413_R2_00001
241-PJA3413_R2_00001
PanJit Semiconductor MOSFETs 20V P-Channel Enhancement Mode MOSFET 12000: USD0.07
RFQ
0

TTI

Part # Manufacturer Description Price BuyNow  Qty.
PJA3413-R1-00001
PJA3413-R1-00001
PanJit Semiconductor MOSFETs SOT-23/MOS/SOT/NFET-20TMP 3000: USD0.059
6000: USD0.057
9000: USD0.054
BuyNow
60000
PJA3413-AU-R1-000A1
PJA3413-AU-R1-000A1
PanJit Semiconductor MOSFETs SOT-23/MOS/SOT/NFET-20TMP 30000: USD0.0327
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0

TME

Part # Manufacturer Description Price BuyNow  Qty.
PJA3413_R1_00001
PJA3413-R1
PanJit Semiconductor Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -13.6A; 1.25W 9000: USD0.0453
3000: USD0.0513
1000: USD0.0759
500: USD0.0867
250: USD0.0948
100: USD0.1062
10: USD0.2764
1: USD0.3794
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2390

NAC

Part # Manufacturer Description Price BuyNow  Qty.
PJA3413_R2
PanJit Semiconductor Ultra Low Capacitance ESD Protection - 7IN. REEL. Package Type: DFN 2L RFQ
0
PJA3413-AU_R1_000A1
PanJit Semiconductor MOS Function, SOT Line, SOT-23 Package, 7in. Package Size 15000: USD0.04
30000: USD0.03
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10303650
PJA3413_R2_00001
PanJit Semiconductor 20V P-Channel Enhancement Mode MOSFET RFQ
0
PJA3413_R1_00001
PanJit Semiconductor 20V P-Channel Enhancement Mode MOSFET 1500: USD0.03
3000: USD0.027
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968445
PJA3413_R1
PanJit Semiconductor SILICON ZENER DIODE - 13IN. REEL. Package Type: SOD-523 RFQ
0

Chip 1 Exchange

Part # Manufacturer Description Price BuyNow  Qty.
PJA3413_R1_00001
PanJit Semiconductor INSTOCK RFQ
3997

Avnet Silica

Part # Manufacturer Description Price BuyNow  Qty.
PJA3413-AU-R1-000A1
PJA3413-AU-R1-000A1
PanJit Semiconductor /A13/TR/7/HF/3K/SOT-23/MOS/SOT/NFET-20TMP/NF20T-QI09/PJ///" (Alt: PJA3413-AU-R1-000A1) BuyNow
0

Ozdisan Elektronik

Part # Manufacturer Description Price BuyNow  Qty.
PJA3413-AU_R1_000A1
PanJit Group MOSFET DIS.3.4A 20V P-CH SOT23 SMT 3000: USD0.0768
5: USD0.0937
RFQ
0
PJA3413_R2_00001
PanJit Group MOSFET DIS.3.4A 20V P-CH SOT23 SMT 12000: USD0.0611
5: USD0.07454
RFQ
0
PJA3413_R1_00001
PanJit Group MOSFET DIS.3.4A 20V P-CH SOT23 SMT 3000: USD0.0563
5: USD0.06869
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3070

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