2008. 1. 22 1/2 semiconductor technical data kdp600ul silicon epitaxial pin type diode revision no : 0 for antenna switches in mobile applications. features h array type (4 diode in one package) h low capacitance h low series resistance maximum rating (ta=25 ? ) electrical characteristics (ta=25 ? ) characteristic symbol rating unit reverse voltage v r 30 v forward current i f 100 ma junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit reverse current i r v r =30v - - 0.1 a forward voltage v f i f =10ma - - 1.0 v total capacitance c t v r =1v, f=1mhz - - 0.30 pf series resistance r s i f =10ma, f=100mhz - - 1.3 ? esd-capability * - c=200pf, r=0 ? , both forward and reverse direction 1 pulse 100 - - v * failure cirterion : i r >100na at v r =30v.
2008. 1. 22 2/2 kdp600ul revision no : 0
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