elektronische bauelemente ssg9971a 5a, 60v, r ds(on) 50m ? dual-n enhancement mode power mosfet 24-jun-2014 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. a h b m d c j k f l e n g 9971ass = date code rohs compliant product a suffix of -c specifies halogen & lead-free description the ssg9971a provide the designer with the best combination of fast switching, ruggedized devic e design, ultra low on-resistance and cost-effectiveness. features low on-resistance simple drive requirement double-n mosfet package marking code package information package mpq leader size sop-8 3k 13 inch absolute maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 60 v gate-source voltage v gs 20 v t a = 25c 5 continuous drain current@ v gs =10v 3 t a = 70c i d 3.2 a pulsed drain current 1,2 i dm 30 a linear derating factor - 0.016 w/c power dissipation@ t a =25c p d 2 w operating junction & storage temperature range t j , t stg -55~150 c thermal resistance ratings thermal resistance junction-ambient (max.) 3 r ja 62.5 c / w sop-8 millimeter millimeter ref. min. max. ref. min. max. a 5.80 6. 20 h 0 . 35 0 .4 9 b 4 . 80 5.0 0 j 0. 375 ref. c 3 .80 4 . 0 0 k 45 d 0 8 l 1.35 1. 75 e 0.40 0.90 m 0.10 0 . 25 f 0. 19 0. 25 n 0. 25 ref. g 1.27 typ. g s g s d d d d
elektronische bauelemente ssg9971a 5a, 60v, r ds(on) 50m ? dual-n enhancement mode power mosfet 24-jun-2014 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test condition static drain-source breakdown voltage bv dss 60 - - v v gs =0v, i d =250 a breakdown voltage temp. coefficient bv ds / t j - 0.06 - v / c reference to 25c, i d =1ma gate-threshold voltage v gs(th) 1 - 3 v v ds =v gs , i d =250 a forward transconductance g fs - 7 - s v ds =10v, i d =5a gate-body leakage i gss - - 100 na v gs =20v - - 1 v ds =48v,v gs =0, t j =25c zero gate voltage drain current i dss - - 25 a v ds =48v,v gs =0, t j =70c - - 50 v gs =10v, i d =5a drain-source on-resistance 2 r ds(on) - - 60 m v gs =4.5v, i d =2.5a total gate charge 2 q g - 32.5 - gate-source charge q gs - 4.9 - gate-drain (miller) charge q gd - 8.8 - nc i d = 5a v ds = 48v v gs = 10v turn-on delay time 2 t d(on) - 9.6 - rise time t r - 10 - turn-off delay time t d(off) - 30 - fall time t f - 5.5 - ns v ds = 30v i d = 5a v gs = 10v r g = 3.3 r d = 6 input capacitance c iss - 1658 - output capacitance c oss - 156 - reverse transfer capacitance c rss - 109 - pf v gs =0v v ds =25v f=1.0mhz source-drain diode forward on voltage 2 v sd - - 1.2 v i s =1.6a, v gs =0v reverse recovery time t rr - 29.2 - ns reverse recovery charge q rr - 48 - nc i s =5a, v gs =0v dl/dt=100a/ s notes: 1. pulse width limited by max. junction tem perature. 2. pulse width Q 300us, duty cycle Q 2%. 3. surface mounted on a 1 in 2 copper pad of fr-4 board; 135 /w when mounted on min. copper pad.
elektronische bauelemente ssg9971a 5a, 60v, r ds(on) 50m ? dual-n enhancement mode power mosfet 24-jun-2014 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristics curve
elektronische bauelemente ssg9971a 5a, 60v, r ds(on) 50m ? dual-n enhancement mode power mosfet 24-jun-2014 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristics curve
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