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| Datasheet File OCR Text: |
| ty n-channel mos fet RHK003N06 z s t ru ctu r e z ex te rna l dime ns ions (unit : mm) z f eatu r es 1) low on-resist ance. 2) 4v drive. z a pplic a t ions each lead has same dimensions smt3 ( 2 ) ( 1 ) 2.8 1.6 0.4 ( 3 ) 2.9 1.9 0.95 0.95 0.8 0.15 0.3min. 1.1 (1)source (2)gate (3)dr ain abbreviated symbol : rks sw itching z packag in g sp ecificatio n s an d h fe z inne r c i rc uit (1) source (2) gate (3) drain (1) (3) (2) ? 2 ? 1 ? 1 esd protection diode ? 2 body diode package code taping basic ordering unit (pieces) RHK003N06 t146 3000 type z a b solute maximum ratings (t a= 25 c) ? 1 ? 2 ? 1 parameter v v dss symbol v v gss ma i d a i dp ma i s ma i sp mw p d c tch c tstg limits unit drain-source voltage gate-source voltage drain current total power dissipation channel temperature range of storage temperature continuous pulsed continuous pulsed ? 1 pw 10 s, duty cycle 1% ? 2 each terminal mounted on a recommended land source current (body diode) 60 150 ? 55 to + 150 20 300 1.2 200 800 200 z t h e rmal resist an ce parameter c/w rth(ch-a) symbol limits unit channel to ambient 625 ? each terminal mounted on a recommended land ? product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
z electrical ch aracteristics (t a= 25 c) parameter symbol i gss y fs min. ? typ. max. unit conditions v (br) dss i dss v gs (th) r ds (on) c iss c oss c rss t d (on) t r t d (off) t f q g q gs q gd ? ? ? ? ? ? ? ? ? gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ? pulsed ? 1 0 av gs =20v, v ds =0v v dd 30v 60 ?? vi d = 1ma, v gs =0v ?? 1 av ds = 60v, v gs =0v 1.0 ? 2.5 v v ds = 10v, i d = 1ma ? 0.7 1 . 0 i d = 300ma, v gs = 10v ? 1.1 1 . 5 ? ? i d = 300ma, v gs = 4v 0.2 ?? sv ds = 10v, i d = 300ma ? 33 ? pf v ds = 10v ? 14 9 ? pf v gs =0v ? 6 ? p f f=1mhz ? 5 ? ns ? 13 ? ns ? 80 ? ns ? 3 ? ns ? 0.6 6n c ? 0.5 ? nc v gs = 10v ?? nc i d = 300ma v dd 30 v i d = 150ma v gs = 10v r l =200 ? r g =10 ? z bo d y d i o d e ch aracteristics (source-drain) (t a= 25 c) v sd ?? 1.2 v i s = 300ma, v gs =0v forward voltage parameter symbol min. typ. max. unit conditions ? pulsed ? RHK003N06 product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com |
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