inchange semiconductor product specification silicon pnp power transistors 2SB940,2SB940a description ? ? with to-220fa package ? complement to type 2sd1264/1264a ? high collector to emitter voltage v ceo ? large collector power dissipation p c applications ? for power amplification ? for tv vertical deflection output pinning pin description 1 emitter 2 collector 3 base absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit 2SB940 -200 v cbo collector-base voltage 2SB940a open emitter -200 v 2SB940 -150 v ceo collector-emitter voltage 2SB940a open base -180 v v ebo emitter-base voltage open collector -6 v i c collector current -2 a i cm collector current-peak -3 a t a =25 ?? 2 p c collector power dissipation t c =25 ?? 30 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
inchange semiconductor product specification 2 silicon pnp power transistors 2SB940,2SB940a characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2SB940 -150 v (br)ceo collector-emitter breakdown voltage 2SB940a i c =-5ma ,i b =0 -180 v v (br)cbo collector-base breakdown voltage i c =-50 | a ,i e =0 -200 v v (br)ebo emitter-base breakdown voltage i c =-500 | a ,i c =0 -6 v v cesat collector-emitter saturation voltage i c =-0.5a, i b =-50ma -1.0 v v be base-emitter voltage i c =-0.4a ; v ce =-10v -1.0 v i ebo emitter cut-off current v eb =-4v; i c =0 -50 | a i cbo collector cut-off current v cb =-200v; i e =0 -50 | a h fe-1 dc current gain i c =-0.15a ; v ce =-10v 60 240 h fe-2 dc current gain i c =-0.4a ; v ce =-10v 50 f t transition frequency i c =-0.5a; v ce =-10v,f=10mhz 30 mhz ? h fe-1 classifications q p 60-140 100-240
inchange semiconductor product specification 3 silicon pnp power transistors 2SB940,2SB940a package outline fig.2 outline dimensions (unindicated tolerance: ? 0.15 mm)
inchange semiconductor product specification 4 silicon pnp power transistors 2SB940,2SB940a
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