stp413 d p channel enhancement mode mosfet - 1 2 .0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ?200 9 , stanson corp. st p413d 200 9 . v1 description st p413 d is the p - channel logic enhancement mode power field effect transistor which is produced using high cell density, dmos trench technology. th e st p413d has been designed specially to improve the overall efficiency of dc/dc converters usin g either synchronous or conventional switching pwm controllers. it has been optimized for low gate charge, low r ds(on) and fast switching speed. pin configuratio n (d - pak) to - 252 to - 251 part marking y year code a p erduce code q process code feature l - 4 0v/ - 12 .0 a, r ds(on) = 36 m (typ.) @v gs = - 10v l - 4 0v/ - 8 . 0 a, r ds(on) = 52 m @v gs = - 4.5 v l super high density cell design for extremely low r ds(on) l exceptional on - resistance and maximum dc current capability l t o - 252,to - 251 package design
stp413 d p channel enhancement mode mosfet - 1 2 .0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ?200 9 , stanson corp. st p413d 200 9 . v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drain - source voltage vdss - 4 0 v gate - source voltage vgss ?0 v continuous drain current (tj=150 ) ta=25 ta=70 id - 1 2 .0 - 10 .0 a pulsed drain current idm - 30 a continuous source current (diode conduction) is - 1 2 a power dissipation ta=25 ta=70 pd 5 0 25 w operation junction temperature t j 150 storgae temperature range tstg - 55/150 thermal resistance - juncti on to ambient r ja 6 0 /w
stp413 d p channel enhancement mode mosfet - 1 2 .0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ?200 9 , stanson corp. st p413d 200 9 . v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max uni t static drain - source breakdown voltage v (br)d ss v gs =0v,id= - 250u a - 4 0 v gate threshold voltage v gs(th) v ds =v gs ,id = - 2 50ua - 1.0 - 2. 5 v gate leakage current i gss v ds =0v,v gs =?0v ?00 na zero gate voltage drain current i dss v ds = - 40 v,v gs =0v - 1 ua v ds = - 40 v,v gs =0v t j = 5 5 - 5 on - state drai n current i d(on) v ds R - 10 v,v d s = - 5 v - 3 0 a drain - source on - resistance r ds(on) v gs = - 10v,i d = - 1 2 a v gs = - 4.5 v,i d = - 8 a 36 52 m forward transconductance gfs v ds = - 5v,i d = - 12 a 2 3 s diode forward voltage v sd i s = - 1.0 a,v gs =0v - 1. 0 v dynamic total g ate charge q g v ds = - 1 0 v,v ds = - 20 v i d = - 12a 1 6.5 nc gate - source charge q gs 3 .8 gate - drain charge q gd 3 .5 input capacitance c iss v ds = - 20 v,vgs=0v f =1mhz 9 00 pf output capacitance c oss 69 reverse transfer c apacitance c rss 115 turn - o n time t d(on) tr v gs = - 1 0 v, v ds = - 20 v r l = 1.6 ,r gen = 3 6 .9 ns 9 turn - off time t d(off) tf 44.8 41.2
stp413 d p channel enhancement mode mosfet - 1 2 .0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ?200 9 , stanson corp. st p413d 200 9 . v1 typical characterictics
stp413 d p channel enhancement mode mosfet - 1 2 .0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ?200 9 , stanson corp. st p413d 200 9 . v1 typical characterictics
stp413 d p channel enhancement mode mosfet - 1 2 .0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ?200 9 , stanson corp. st p413d 200 9 . v1 typical characterictics
stp413 d p channel enhancement mode mosfet - 1 2 .0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ?200 9 , stanson corp. st p413d 200 9 . v1 gate charge test circuit & waveform tesistive switching test ci rcuit & waveforms
stp413 d p channel enhancement mode mosfet - 1 2 .0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ?200 9 , stanson corp. st p413d 200 9 . v1 unclamped inductive switching (uis) test circuit & waveforms diode tec0very test circuit & waveforms
stp413 d p channel enhancement mode mosfet - 1 2 .0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ?200 9 , stanson corp. st p413d 200 9 . v1 to - 252 - 2l package outline sop - 8p
stp413 d p channel enhancement mode mosfet - 1 2 .0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ?200 9 , stanson corp. st p413d 200 9 . v1 to - 251 package outline sop - 8p
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