to our customers, old company name in catalogs and other documents on april 1 st , 2010, nec electronics corporation merged with renesas technology corporation, and renesas electronics corporation took over all the business of both companies. therefore, although the old company name remains in this document, it is a valid renesas electronics document. we appreciate your understanding. renesas electronics website: http://www.renesas.com april 1 st , 2010 renesas electronics corporation issued by: renesas electronics corporation (http://www.renesas.com) send any inquiries to http://www.renesas.com/inquiry.
notice 1. all information included in this document is current as of the date this document is issued. such information, however, is subject to change without any prior notice. before purchasing or using any renesas el ectronics products li sted herein, please confirm the latest product information with a renesas electronics sales office. also , please pay regular and careful attention to additional and different information to be disclosed by rene sas electronics such as that disclosed through our website. 2. renesas electronics does not assume any liability for infringeme nt of patents, copyrights, or other intellectual property ri ghts of third parties by or arising from the use of renesas electroni cs products or techni cal information descri bed in this document . no license, express, implied or otherwise, is granted hereby under any patents, copyri ghts or other intell ectual property right s of renesas electronics or others. 3. you should not alter, modify, copy, or otherwise misappropriate any re nesas electronics product, wh ether in whole or in part . 4. descriptions of circuits, software and other related informat ion in this document are provided only to illustrate the operat ion of semiconductor products and application examples. you are fully re sponsible for the incorporation of these circuits, software, and information in the design of your equipment. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. when exporting the products or technology described in this doc ument, you should comply with the applicable export control laws and regulations and follow the proc edures required by such laws and re gulations. you should not use renesas electronics products or the technology described in this docum ent for any purpose relating to mil itary applicati ons or use by the military, including but not l imited to the development of weapons of mass de struction. renesas electronics products and technology may not be used for or incor porated into any products or systems whose manufacture, us e, or sale is prohibited under any applicable dom estic or foreign laws or regulations. 6. renesas electronics has used reasonable care in preparing th e information included in this document, but renesas electronics does not warrant that such information is error free. renesas electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 7. renesas electronics products ar e classified according to the following three quality grades: ?standard?, ?high quality?, an d ?specific?. the recommended applications for each renesas electronics product de pends on the product?s quality grade, as indicated below. you must check the qua lity grade of each renesas electronics pr oduct before using it in a particular application. you may not use any renesas electronics produc t for any application categorized as ?speci fic? without the prior written consent of renesas electronics. further, you may not use any renesas electronics product for any application for which it is not intended without the prior written consent of renesas electronics. re nesas electronics shall not be in any way liable for any damages or losses incurred by you or third partie s arising from the use of any renesas electronics product for a n application categorized as ?specific? or for which the product is not intende d where you have failed to obtain the prior writte n consent of renesas electronics. the quality grade of each renesas electronics product is ?standard? unless otherwise expressly specified in a renesas electr onics data sheets or data books, etc. ?standard?: computers; office equipmen t; communications e quipment; test and measurement equipment; audio and visual equipment; home electronic a ppliances; machine tools; personal electronic equipmen t; and industrial robots. ?high quality?: transportation equi pment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; an ti- crime systems; safety equipment; and medical equipment not specif ically designed for life support. ?specific?: aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support device s or systems), surgical im plantations, or healthcare intervention (e.g. excision, etc.), and any other applicati ons or purposes that pose a di rect threat to human life. 8. you should use the renesas electronics pr oducts described in this document within the range specified by renesas electronics , especially with respect to the maximum ra ting, operating supply voltage range, movement power volta ge range, heat radiation characteristics, installation and other product characteristics. renesas electronics shall have no liability for malfunctions o r damages arising out of the use of renesas electronics products beyond such specified ranges. 9. although renesas electronics endeavors to improve the quality and reliability of its produc ts, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate a nd malfunctions under certain use conditions. fur ther, renesas electronics products are not subject to radiation resistance design. please be sure to implement safety measures to guard them against the possibility of physic al injury, and injury or damage caused by fire in the event of the failure of a renesas electronics product, such as safe ty design for hardware and software in cluding but not limited to redundancy, fire control and malfunction prevention, appropri ate treatment for aging degradation or an y other appropriate measures. because the evaluation of microcomputer software alone is very difficult , please evaluate the safety of the final products or system manufactured by you. 10. please contact a renesa s electronics sales office for details as to environmental matters such as the environmental compatibility of each renesas electronics product. please use renesas electronics products in compliance with all applicable laws and regulations that regul ate the inclusion or use of c ontrolled substances, including wi thout limitation, the eu rohs directive. renesas electronics assumes no liability for damage s or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. this document may not be reproduced or duplicated, in any form, in w hole or in part, without prio r written consent of renes as electronics. 12. please contact a renesa s electronics sales office if you have any questi ons regarding the informat ion contained in this document or renesas electroni cs products, or if you have any other inquiries. (note 1) ?renesas electronics? as used in this document means renesas electronics corporation and also includes its majority- owned subsidiaries. (note 2) ?renesas electronics product(s)? means any product developed or manufactured by or for renesas electronics.
the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. mos field effect transistor np88n055kug switching n-channel power mos fet data sheet document no. d16856ej1v0ds00 (1st edition) date published august 2004 ns cp(k) printed in japan 2004 description the np88n055kug is n-channel mos field effect transistor designed for high current switching applications. features ? channel temperature 175 degree rating ? super low on-state resistance r ds(on) = 3.9 m ? max. (v gs = 10 v, i d = 44 a) ? low c iss : c iss = 9600 pf typ. absolute maximum ratings (t a = 25 c) drain to source voltage (v gs = 0 v) v dss 55 v gate to source voltage (v ds = 0 v) v gss 20 v drain current (dc) (t c = 25 c) i d(dc) 88 a drain current (pulse) note1 i d(pulse) 352 a total power dissipation (t a = 25 c) p t1 1.8 w total power dissipation (t c = 25 c) p t2 200 w channel temperature t ch 175 c storage temperature t stg ? 55 to +175 c repetitive avalanche current note2 i ar 50 a repetitive avalanche energy note2 e ar 250 mj notes 1. pw 10 s, duty cycle 1% 2. t ch 150c, v dd = 28 v, r g = 25 ? , v gs = 20 0 v thermal resistance channel to case thermal resistance r th(ch-c) 0.75 c/w channel to ambient thermal resistance r th(ch-a) 83.3 c/w ordering information part number package np88n055kug to-263 (mp-25zk) (to-263)
data sheet d16856ej1v0ds 2 np88n055kug electrical characteristics (t a = 25 c) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = 55 v, v gs = 0 v 1 a gate leakage current i gss v gs = 20 v, v ds = 0 v 100 na gate to source threshold voltage note v gs(th) v ds = v gs , i d = 250 a 2.0 3.0 4.0 v forward transfer admittance note | y fs | v ds = 10 v, i d = 44 a 28 58 s drain to source on-state resistance note r ds(on) v gs = 10 v, i d = 44 a 3.1 3.9 m input capacitance c iss v ds = 25 v 9600 14400 pf output capacitance c oss v gs = 0 v 730 1100 pf reverse transfer capacitance c rss f = 1 mhz 380 690 pf turn-on delay time t d(on) v dd = 28 v, i d = 44 a 39 90 ns rise time t r v gs = 10 v 34 90 ns turn-off delay time t d(off) r g = 0 120 240 ns fall time t f 15 40 ns total gate charge q g v dd = 44 v 166 250 nc gate to source charge q gs v gs = 10 v 38 nc gate to drain charge q gd i d = 88 a 53 nc body diode forward voltage note v f(s-d) i f = 88 a, v gs = 0 v 0.92 1.5 v reverse recovery time t rr i f = 88 a, v gs = 0 v 48 ns reverse recovery charge q rr di/dt = 100 a/ s 63 nc note pulsed test circuit 3 gate charge v gs = 20 0 v pg. r g = 25 50 d.u.t. l v dd test circuit 1 avalanche capability pg. d.u.t. r l v dd test circuit 2 switching time r g pg. i g = 2 ma 50 d.u.t. r l v dd i d v dd i as v ds bv dss starting t ch v gs 0 = 1 s duty cycle 1% v gs wave form v ds wave form v gs v ds 10% 0 0 90% 90% 90% v gs v ds t on t off t d(on) t r t d(off) t f 10% 10%
data sheet d16856ej1v0ds 3 np88n055kug typical characteristics (t a = 25c) derating factor of forward bias safe operating area total power dissipation vs. case temperature dt - percentage of rated power - % 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 t c - case temperature - c p t - total power dissipation - w 0 50 100 150 200 250 0 25 50 75 100 125 150 175 t c - case temperature - c forward bias safe operating area i d - drain current - a 0.1 1 10 100 1000 0.1 1 10 100 1 ms 10 ms i d(pulse) = 352 a i d(dc) = 88 a t c = 25c single pulse r ds(on) limited (at v gs = 10 v) dc pw = 100 s v ds - drain to source voltage - v transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - c/w 0.01 0.1 1 10 100 1000 r th(ch-a) = 83.3c/w r th(ch-c) = 0.75c/w single pulse pw - pulse width - s 100 1 m 10 m 100 m 1 10 100 1000
data sheet d16856ej1v0ds 4 np88n055kug drain current vs. drain to source voltage forward transfer characteristics i d - drain current - a 0 100 200 300 400 0 0.4 0.8 1.2 1.6 v gs = 10 v pulsed v ds - drain to source voltage - v i d - drain current - a 0.001 0.01 0.1 1 10 100 1000 0123456 t a = ? 55c ? 25c 25c 85c 125c 150c 175c v ds = 10 v pulsed v gs - gate to source voltage - v gate to source threshold voltage vs. channel temperature forward transfer admittance vs. drain current v gs(th) - gate to source threshold voltage - v 0 1 2 3 4 -100 -50 0 50 100 150 200 v ds = v gs i d = 250 a t ch - channel temperature - c | y fs | - forward transfer admittance - s 1 10 100 0.1 1 10 100 t a = ? 55c 25c 85c 125c 175c v ds = 10 v pulsed i d - drain current - a drain to source on-state resistance vs. drain current drain to source on-state resistance vs. gate to source voltage r ds(on) - drain to source on-state resistance - m 0 1 2 3 4 5 6 1 10 100 1000 v gs = 10 v pulsed i d - drain current - a r ds(on) - drain to source on-state resistance - m 0 2 4 6 8 10 048121620 pulsed i d = 17.6 a 44 a 88 a v gs - gate to source voltage - v
data sheet d16856ej1v0ds 5 np88n055kug drain to source on-state resistance vs. channel temperature capacitance vs. drain to source voltage r ds(on) - drain to source on-state resistance - m 0 2 4 6 8 -100 -50 0 50 100 150 200 v gs = 10 v i d = 44 a t ch - channel temperature - c c iss , c oss , c rss - capacitance - pf 100 1000 10000 100000 0.1 1 10 100 v gs = 0 v f = 1 mhz c iss c rss c oss v ds - drain to source voltage - v switching characteristics dynamic input/output characteristics t d(on) , t r , t d(off) , t f - switching time - ns 1 10 100 1000 0.1 1 10 100 v dd = 28 v v gs = 10 v r g = 0 t d(of f ) t d(on) t r t f i d - drain current - a v ds - drain to source voltage - v 0 10 20 30 40 50 60 0 40 80 120 160 200 0 2 4 6 8 10 12 i d = 88 a v ds v gs v dd = 44 v 28 v 11 v q g - gate charge - nc v gs - gate to source voltage - v source to drain diode forward volt age reverse recovery time vs. diode forward current i f - diode forward current - a 0.01 0.1 1 10 100 1000 0 0.4 0.8 1.2 1.6 0 v pulsed v gs = 10 v v f(s-d) - source to drain voltage - v t rr - reverse recovery time - ns 10 100 0.1 1 10 100 di/dt = 100 a/ s v gs = 0 v i f - diode forward current - a
data sheet d16856ej1v0ds 6 np88n055kug package drawing (unit: mm) to-263 (mp-25zk) 10.0 ?.3 8.0 typ. 2.54 0.75 ?.2 9.15 ?.3 2.54 ?.25 15.25 ?.5 1.35 ?.3 2 13 4 2.5 4.45 ?.2 1.3 ?.2 0.5 ?.2 0 to 8? 1: gate 2: drain 3: source 4: fin (drain) no plating 7.88 min. 0.025 to 0.25 0.25 equivalent circuit source body diode gate drain remark strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
np88n055kug the information in this document is current as of august, 2004. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec electronics data sheets or data books, etc., for the most up-to-date specifications of nec electronics products. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec electronics. nec electronics assumes no responsibility for any errors that may appear in this document. nec electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec electronics products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec electronics or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. nec electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec electronics endeavors to enhance the quality, reliability and safety of nec electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. nec electronics products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to nec electronics products developed based on a customer- designated "quality assurance program" for a specific application. the recommended applications of an nec electronics product depend on its quality grade, as indicated below. customers must check the quality grade of each nec electronics product before using it in a particular application. "standard": computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "special": transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "specific": aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. the quality grade of nec electronics products is "standard" unless otherwise expressly specified in nec electronics data sheets or data books, etc. if customers wish to use nec electronics products in applications not intended by nec electronics, they must contact an nec electronics sales representative in advance to determine nec electronics' willingness to support a given application. (note) (1) "nec electronics" as used in this statement means nec electronics corporation and also includes its majority-owned subsidiaries. (2) "nec electronics products" means any product developed or manufactured by or for nec electronics (as defined above). ? ? ? ? ? ? m8e 02. 11-1
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