s mhop microelectronics c orp. a product summary v dss i d r ds(on) (m @ vgs=-4.5v features super high dense cell design for low r ds(on) . rugged and reliable. suface mount package. p-channel enhancement mode field effect transistor www.samhop.com.tw aug,29,2012 1 details are subject to change without notice. sot-23 g s d STS3417 ver 1.0 g r p p r p p thermal characteristics 100 thermal resistance, junction-to-ambient r ja c/w symbol v ds v gs i dm a i d units parameter -30 -3 -11 v v 12 gate-source voltage drain-source voltage absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous -pulsed b a t a =25 c w p d c 1.25 -55 to 150 t a =25 c maximum power dissipation operating junction and storage temperature range t j , t stg esd protected. 123 @ vgs=-2.5v s g d a a a 100 @ vgs=-4.0v 103 @ vgs=-3.7v 111 @ vgs=-3.1v
symbol min typ max units 10 i gss 10 ua v gs(th) -0.5 v m ohm v gs =-4.5v , i d =-1.5a r ds(on) drain-source on-state resistance i dss ua gate threshold voltage v ds =v gs ,i d =-0.25ma v ds =-30v , v gs =0v v gs =12v,v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions on characteristics STS3417 ver 1.0 -0.7 -1.5 v sd c iss 323 pf c oss 73 pf c rss 53 pf q g 7.2 nc 12.4 nc q gs 7.4 nc q gd 8.9 t d(on) 9 ns t r 1.3 ns t d(off) 2.7 ns t f ns gate-drain charge v ds =-15v,v gs =0v switching characteristics gate-source charge v dd =-15v i d =-1.5a v gs =-4.5v r gen = 4.7 ohm total gate charge rise time turn-off delay time fall time turn-on delay time input capacitance output capacitance dynamic characteristics diode forward voltage reverse transfer capacitance v gs =-2.5v , i d =-1.5a m ohm c f=1.0mhz c v ds =-15v,i d =-1.5a, v gs =-4.5v drain-source diode characteristics and maximum ratings v gs =0v,i s =-1a -0.8 -1.2 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. _ _ www.samhop.com.tw aug,29,2012 2 74 96 91 123 52 69 bv dss -30 v drain-source breakdown voltage v gs =20v , i d =-10ma v gs =0v,i d =-10ma v bv dsx -10 _ v gs =-4.0v , i d =-1.5a m ohm 76 100 54 v gs =-3.7v , i d =-1.5a m ohm 78 103 56 v gs =-3.1v , i d =-1.5a m ohm 83 111 61
STS3417 ver 1.0 www.samhop.com.tw aug,29,2012 3 drain current -i d (a) drain-source voltage -v ds (v) i d -v ds gate-source voltage -v gs (v) drain-source on-resistance r ds(on) (m ) 10 8 6 4 2 0 0 0.2 0.4 0.6 0.8 1.0 v gs =1 .5v 10 8 6 4 2 0 0 0.5 1.0 1.5 2.0 2.5 -55 c tj=100 c 25 c 0.5 0.4 0.3 0.2 0.1 0 0 2 4 6 8 10 i d =- 3a -1 .5a 110 100 1 10 1000 0.1 drain current -i d (a) drain-source voltage -v ds (v) i d -v ds drain current -i d (a) drain-source voltage -v ds (v) i d -v gs v ds -v gs gate-source voltage -v gs (v) drain current -i d (a) r ds(on) -i d 1.6 1 .7 2 .0 1.8 2. 2 2.5 125 100 75 50 25 0 -80 80 40 -40 0 120 160 ambient temperature ta ( c) r ds(on) (m ) i d = -0.75, -1.5, -3a v gs =-4.5v v gs =-2.5v drain-source on resistance r ds(on) -t a 3.0 -0. 75 a 3 .5 4 .5 15 12 9 6 3 0 0 0.4 0.8 1.2 1.6 2.0 v gs =1.5 v 1.6 1 .7 1. 8 1.9 3.5 2 .2 3 .0 i d = -0.75, -1.5, -3a 150 100 v g s =-2.5v v g s =-4.5 v 4. 5 2.5 2.0
STS3417 ver 1.0 www.samhop.com.tw aug.29,2012 4 drain-source voltage -v ds (v) total gate charge qg (nc) 7.5 6.0 4.5 3.0 1.5 0 50 40 30 20 10 0 036912 gate threshold voltage -vth (v) ambient temperature ta ( c) drain power dissipation p d (w) 2.5 2.0 1.5 1.0 0.5 0 0 40 80 120 160 -80 80 40 -40 0 1.0 0.8 0.6 0.4 0.2 0 120 160 drain-source voltage -v ds (v) 100 10 0.1 0 0.2 0.4 0.6 0.8 1.0 1 drain reverse current -i dr (a) i dr v ds 100 10 capacitance c (pf) drain-source voltage -v ds (v) 110 100 0.1 1000 crss ciss coss capacitance v ds vth ta ambient temperature ta ( c) gate-source voltage -v gs (v) p d ta dynamic input/output characteristics v ds = v gs i d =- 250ua i d = -1.5a v dd =-24v v dd =-24v -12 -12 -6 1.2 v gs =0v 1 4.5 2 3 -6
STS3417 ver 1.0 www.samhop.com.tw aug,29,2012 5 safe operating area pulse width tw (s) rth-tw transient thermal impedance rth ( c/w) drain current -id (a) drain-source voltage -v ds (v) 0.1 1 10 10 0.1 100 v gs =-4.5v single pulse t a =25 c r d s (on) limit 0.01 10 us 10 0u s 1ms 10 m s 1s dc 1 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 0.1 mounted on fr-4 board single pulse
www.samhop.com.tw aug,29,2012 6 STS3417 ver 1.0 package outline dimensions sot 23 d e e1 e e1 b 1 2 3 l detail "a" millimeters inches symbols d e 2.700 3.100 2.200 3.000 e1 1.200 1.700 e e1 b 0.300 0.510 c 0.080 0.200 a a1 a a1 0.000 0.150 0.887 1.300 l1 l l1 0.600 ref. 0 o 10 o 0.106 0.122 0.087 0.118 0.047 0.067 0.019 0.020 0.003 0.008 0.000 0.006 0.035 0.051 0.024 ref. 0 o 10 o min max min max 0.850 1.150 0.033 0.045 1.800 2.100 0.071 0.083 0.450 ref. 0.018 ref. detail "a"
www.samhop.com.tw aug,29,2012 7 STS3417 ver 1.0 sot23 tape and reel data sot23-3l carrier tape sot23-3l reel 3.15 2 0.10 2.77 2 0.10 1.22 2 0.10 1.00 +0.05 1.50 +0.10 8.00 +0.30 -0.10 1.75 2 0.10 3.50 2 0.05 4.00 2 0.10 4.00 2 0.10 2.00 2 0.05 0.22 2 0.04 178 178 2 1 60 2 1 9.00 2 0.5 12.00 2 0.5 13.5 ! ! 2 0.5 2.00 2 0.5 10.0 18.00 5.00 8 @ v unit: @ r g s k h w1 w n m 10.5 reel size tape size unit: @ package sot23-3l a0 b0 k0 d0 d1 e e1e2p0 p1p2 t tr feed direction
|
