1999. 11. 30 1/3 semiconductor technical data ktb985 epitaxial planar pnp transistor revision no : 1 voltage regulators, relay drivers lamp drivers, electrical equipment features h adoption of mbit processes. h low collector-to-emitter saturation voltage. h fast switching speed. h large current capacity and wide aso. h complementary to ktd1347. maximum rating (ta=25 ? ) dim millimeters a b d e g h k l 1. emitter 2. collector 3. base p to-92l 7.20 max 5.20 max 2.50 max 0.60 max 1.27 1.70 max 0.55 max 14.00 0.50 0.35 min 0.75 0.10 4 f j m o q 2 5 1.25 1.50 0.10 max depth:0.2 123 b a c q k ff m m n n o h l j d c n g p hh e d h r s 12.50 0.50 r 1.00 s 1.15 max + _ + _ + _ electrical characteristics (ta=25 ? ) note : h fe (1) classification a:100 q 200, b:140 q 280, c:200 q 400 characteristic symbol rating unit collector-base voltage v cbo -60 v vollector-emitter voltage v ceo -50 v emitter-base voltage v ebo -6 v collector current i c -3 a collector current (pulse) i cp -6 a collector power dissipation p c 1 w junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit. collector cut-off current i cbo v cb =-40v, i e =0 - - -1 u emitter cut-off current i ebo v eb =-4v, i c =0 - - -1 u dc current gain h fe (1) (note) v ce =-2v, i c =-100 v 100 - 400 h fe (2) v ce =-2v, i c =-3a 35 - - collector-emitter saturation voltage v ce(sat) i c =-2a, i b =-100 v - -0.35 -0.7 v base-emitter saturation voltage v be(sat) i c =-2a, i b =-100 v - -0.94 -1.2 v transition frequency f t v ce =-10v, i c =-50 v - 150 - ? collector output capacitance c ob v cb =-10v, i e =0, f=1 ? - 39 - ? switching time turn-on time t on - 70 - ns storage time t stg - 450 - fall time t f - 35 - i b2 470 f 25 5v -25v -10i 1=10i =i =1a bb2c 100 f 50 vr i b1 pw=20 s dc 1% r8 input < =
1999. 11. 30 2/3 ktb985 revision no : 1 collecotr current i c (a) 0 0 collector-emitter voltage v ce (v) i c - v ce 10 dc current gain h fe -0.3 -0.1 -0.03 -0.01 collector current i c (a) h fe - i c collector emitter voltage v ce (v) 0-2-4-6 0 collector current i c (a) -0.4 -0.8 -1.2 -1.6 -2.0 -1.0 -2.0 -3.0 -4.0 -5.0 i =0 b -1 -3 -10 30 50 100 300 500 1k v =-2v ce -8 -10 -12 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -0.5 -1.5 -2.5 -3.5 -4.5 -5ma -10ma -20ma -50ma -100ma -200ma collector current i c (a) 0 0 -0.8 -1.6 -2.4 -3.2 base emitter voltage v be (v) -0.4 i c - v be -0.2 -0.6 -0.8 -1.0 -1.2 -0.4 -1.2 -2.0 -2.8 v =-2v ce ta=75 c 25 c -25 c i c - v ce -14 -16 -18 -20 -2.0 i =0 b -2ma -4ma -6ma -8ma -10ma -12ma -14ma ta=75 c ta=25 c ta=-25 c -0.01 voltage v ce(sat) (mv) -10 -100 -30 -50 -500 -300 -1k collector current i c (a) -0.1 -0.03 -0.3 -1 -3 -10 v ce(sat) - i c i /i =20 c b ta=-25 c ta=25 c ta=75 c collector emitter saturation base-emitter saturation collector current i c (a) -0.03 -0.01 -0.1 -0.5 -0.3 -0.1 -0.3 -1 -10 -3 -10 -3 -1 -5 v be(sat) - i c c i /i =20 voltage v be(sat) (v) ta=-25 c ta=75 c ta=25 c b
1999. 11. 30 3/3 ktb985 revision no : 1 1.2 collector dissipation p c (w) 0.8 1.0 0.4 0.2 0.6 0 020 120 40 60 100 80 160 140 -0.03 collector current i c (a) gain-bandwidth product f t (mhz) -0.01 1.8 1.6 1.4 500 100 300 30 50 10 1k v =10v -1 -0.3 -0.1 pc - ta -3 -10 ce f t - i c collector current i c (a) collector emitter voltage v ce (v) ta=25 c one pulse -0.3 -0.05 -0.5 -0.3 -0.1 -0.03 -0.02 -0.1 -1 dc operation -1 -3 -10 -100 -30 safe operating area collector base voltage v cb (v) output capacitance c ob (pf) i max. cp -0.3 -0.1 -10 -5 -3 i c 1 3 5 10 50 30 -10 -3 -1 100 ms 10ms 1ms 100 c ob - v cb f=1mhz -30 -100 ambient temperature ta ( c)
|
