2013. 5. 06 1/7 semiconductor technical data kf7n65p/f n channel mos field effect transistor revision no : 1 general description this planar stripe mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for active power factor correction and switching mode power supplies. features h v dss =650v, i d =7a h drain-source on resistance : r ds(on) (max)=1.2 ? @v gs =10v h qg(typ.)= 24nc maximum rating (tc=25 ? ) * : drain current limited by maximum junction temperature. characteristic symbol rating unit kf7n65p kf7n65f drain-source voltage v dss 650 v gate-source voltage v gss ? 30 v drain current @t c =25 ? i d 7 7* a @t c =100 ? 4.2 4.2* pulsed (note1) i dp 18 18* single pulsed avalanche energy (note 2) e as 212 mj repetitive avalanche energy (note 1) e ar 1.6 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns drain power dissipation tc=25 ? p d 160 44.6 w derate above 25 ? 1.28 0.36 w/ ? maximum junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? thermal characteristics thermal resistance, junction-to-case r thjc 0.78 2.8 ? /w thermal resistance, junction-to-ambient r thja 62.5 62.5 ? /w g d s pin connection dim millimeters to-220ab 1.46 a b c d e f g h j k m n o 0.8 0.1 + _ 2.8 0.1 + _ 2.54 0.2 + _ 1.27 0.1 + _ 1.4 0.1 + _ 13.08 0.3 + _ 3.6 0.2 + _ + _ 9.9 0.2 + _ 9.2 0.2 + _ 4.5 0.2 + _ 2.4 0.2 15.95 max 1.3+0.1/-0.05 0.5+0.1/-0.05 3.7 1.5 a f b j g k m l l e i i o c h nn q d q p p 1. gate 2. drain 3. source 12 3 1. gate 2. drain 3. source to-220is (1) a a b b c c d d e e f f g g h h 1.47 max 1.47 max j j k k l m l n nn o o q r q r 123 m dim millimeters *single gauge lead frame 10.16 0.2 + _ 15.87 0.2 + _ 2.54 0.2 + _ 0.8 0.1 + _ 3.18 0.1 + _ 0.5 0.1 + _ 3.23 0.1 + _ 13.0 0.5 + _ 2.54 0.2 + _ 4.7 0.2 + _ 6.68 0.2 + _ 2.76 0.2 + _ 3.3 0.1 + _ 12.57 0.2 + _ kf7n65p kf7n65f
2013. 5. 06 2/7 kf7n65p/f revision no : 1 electrical characteristics (tc=25 ? ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 a, v gs =0v 650 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 ? - 0.65 - v/ ? drain cut-off current i dss v ds =650v, v gs =0v, - - 10 a gate threshold voltage v th v ds =v gs , i d =250 a 2.5 - 4.5 v gate leakage current i gss v gs = ? 30v, v ds =0v - - ? 100 na drain-source on resistance r ds(on) v gs =10v, i d =3.5a - 1.0 1.2 ? dynamic total gate charge q g v ds =520v, i d =7.0a v gs =10v (note4,5) - 24 - nc gate-source charge q gs - 5.4 - gate-drain charge q gd - 9.5 - turn-on delay time t d(on) v dd =325v i d =7.0a r g =25 ? (note4,5) - 30 - ns turn-on rise time t r - 30 - turn-off delay time t d(off) - 50 - turn-off fall time t f - 25 - input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 1010 - pf output capacitance c oss - 111 - reverse transfer capacitance c rss - 7.0 - source-drain diode ratings continuous source current i s v gs 2013. 5. 06 3/7 kf7n65p/f revision no : 1 normalized breakdown voltage bv dss gate - source voltage v gs (v) fig1. i d - v ds drain - source voltage v ds (v) drain current i d (a) 10 0 10 -1 10 1 68 410 2 fig2. i d - v gs fig3. bv dss - t j fig4. r ds(on) - i d -100 -50 0.8 0.9 1.2 1.1 1.0 050 100 150 drain current i d (a) drain current i d (a) on - resistance r ds(on) ( ? ) fig5. i s - v sd 0.2 0.4 0.8 1.0 1.2 0.6 1.4 reverse drain current i s (a) 3.0 2.5 1.5 1.0 0.5 0 2.0 012 69 318 15 junction temperature tj ( ) c source - drain voltage v sd (v) 10 0 10 -1 10 1 fig6. r ds(on) - t j junction temperature t j ( ) 0 50 -100 -50 100 150 normalized on resistance 0.0 0.5 3.0 2.5 1.0 1.5 2.0 c v gs =10v i ds = 3.75a v gs = 0v i ds = 250 100 c 25 c 150 c 25 c 1100 0.1 10 0.1 1 10 100 v gs =10v, 7v v gs =10v v gs =7v v ds =20v v gs =5v
2013. 5. 06 4/7 kf7n65p/f revision no : 1 gate - charge q g (nc) 0 12 10 6 2 4 8 28 32 12 4 20 16 24 8 0 fig8. q g - v gs fig9. safe operation area gate - source voltage v gs (v) 10 4 10 3 10 2 10 1 10 0 fig10. safe operation area 0 0 6 2 4 8 75 150 125 50 100 25 drain current i d (a) i d =7a c junction temperature t j ( ) fig11. i d - t j v ds = 520v v ds = 325v v ds = 130v drain - source voltage v ds (v) capacitance (pf) drain current i d (a) drain - source voltage v ds (v) 10 1 10 1 10 -1 10 0 10 0 10 2 10 2 10 3 (kf7n65p) t c = 25 t j = 150 single nonrepetitive pulse c c dc 10ms 1ms 100 s 10 s operation in this area is limited by r ds(on) drain current i d (a) drain - source voltage v ds (v) 10 1 10 1 10 -2 10 -1 10 0 10 0 10 2 10 2 10 3 (kf7n65f) t c = 25 t j = 150 single nonrepetitive pulse c c dc operation in this area is limited by r ds(on) fig 7. c - v ds 0 10203040 c rss c oss c iss 10ms 1ms 100 s 10 s
2013. 5. 06 5/7 kf7n65p/f revision no : 1 fig12. transient thermal response curve transient thermal resistance fig13. transient thermal response curve transient thermal resistance time (sec) (kf7n65p) 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -2 10 -1 10 0 0.02 0.2 0.01 - duty factor, d= t 1 /t 2 t 1 t 2 p dm duty=0.5 single pulse 0.05 0.1 time ( sec ) (kf7n65f) 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -2 10 -1 10 1 10 0 duty=0.5 0.05 0.1 0.2 0 .02 0. 01 s ingle pulse - duty factor, d= t 1 /t 2 t 1 t 2 p dm
2013. 5. 06 6/7 kf7n65p/f revision no : 1 fig14. gate charge i d i d v ds v gs v gs v ds v gs 1.0 ma fast recovery diode 10v 10 v 25 ? r l q g q gd q gs q t p fig16. resistive load switching fig15. single pulsed avalanche energy v ds (t) i d (t) v ds v gs 10 v 25 ? l time e as = li as 2 bv dss - v dd bv dss 1 2 v dd i as bv dss v ds v gs t r t d(off) t off t d(on) t on t f 10% 90% 50v 0.8 v dss 0.5 v dss
2013. 5. 06 7/7 kf7n65p/f revision no : 1 fig17. source - drain diode reverse recovery and dv /dt i f i s v ds v sd i sd (dut) v ds (dut) v gs 10v driver dut body diode recovery dv/dt body diode forword voltage drop body diode forword current body diode reverse current di/dt v dd i rm 0.5 v dss
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