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| 1 motorola smallsignal transistors, fets and diodes device data npn and pnp silicon surface mount transistors with monolithic bias resistor network the brt (bias resistor transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. these digital transistors are designed to replace a single device and its external resistor bias network. the brt eliminates these individual components by integrating them into a single device. in the mun5311dw1t1 series, two complementary brt devices are housed in the sot363 package which is ideal for low power surface mount applications where board space is at a premium. ? simplifies circuit design ? reduces board space ? reduces component count ? available in 8 mm, 7 inch/3000 unit tape and reel. maximum ratings (t a = 25 c unless otherwise noted, common for q 1 and q 2 , minus sign for q 2 (pnp) omitted) rating symbol value unit collector-base voltage v cbo 50 vdc collector-emitter voltage v ceo 50 vdc collector current i c 100 madc thermal characteristics thermal resistance e junction-to-ambient (surface mounted) r q ja 833 c/w operating and storage temperature range t j , t stg 65 to +150 c total package dissipation @ t a = 25 c (1) p d * 150 mw device marking and resistor values: mun5311dw1t1 series device marking r1 (k) r2 (k) mun5311dw1t1 mun5312dw1t1 mun5313dw1t1 MUN5314DW1T1 mun5315dw1t1 (2) 11 12 13 14 15 10 22 47 10 10 10 22 47 47 mun5316dw1t1 (2) mun5330dw1t1 (2) mun5331dw1t1 (2) mun5332dw1t1 (2) mun5333dw1t1 (2) mun5334dw1t1 (2) mun5335dw1t1 (2) 16 30 31 32 33 34 35 4.7 1.0 2.2 4.7 4.7 22 2.2 1.0 2.2 4.7 47 47 47 1. device mounted on a fr-4 glass epoxy printed circuit board using the minimum recommended footprint. 2. new resistor combinations. updated curves to follow in subsequent data sheets. thermal clad is a trademark of the bergquist company preferred devices are motorola recommended choices for future use and best overall value. order this document by mun5311dw1t1/d
semiconductor technical data motorola preferred devices case 419b01, style 1 sot363 q 1 r 1 r 2 r 2 r 1 q 2 (1) (2) (3) (4) (5) (6) 1 2 3 6 5 4 ? motorola, inc. 1997 rev 3 2 motorola smallsignal transistors, fets and diodes device data electrical characteristics (t a = 25 c unless otherwise noted, common for q 1 and q 2 , minus sign for q 2 (pnp) omitted) characteristic symbol min typ max unit off characteristics collector-base cutoff current (v cb = 50 v, i e = 0) i cbo e e 100 nadc collector-emitter cutoff current (v ce = 50 v, i b = 0) i ceo e e 500 nadc emitter-base cutoff current mun5311dw1t1 (v eb = 6.0 v, i c = 0) mun5312dw1t1 mun5313dw1t1 MUN5314DW1T1 mun5315dw1t1 mun5316dw1t1 mun5330dw1t1 mun5331dw1t1 mun5332dw1t1 mun5333dw1t1 mun5334dw1t1 mun5335dw1t1 i ebo e e e e e e e e e e e e e e e e e e e e e e e e 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 madc collector-base breakdown voltage (i c = 10 m a, i e = 0) v (br)cbo 50 e e vdc collector-emitter breakdown voltage (3) (i c = 2.0 ma, i b = 0) v (br)ceo 50 e e vdc on characteristics (3) dc current gain mun5311dw1t1 (v ce = 10 v, i c = 5.0 ma) mun5312dw1t1 mun5313dw1t1 MUN5314DW1T1 mun5315dw1t1 mun5316dw1t1 mun5330dw1t1 mun5331dw1t1 mun5332dw1t1 mun5333dw1t1 mun5334dw1t1 mun5335dw1t1 h fe 35 60 80 80 160 160 3.0 8.0 15 80 80 80 60 100 140 140 350 350 5.0 15 30 200 150 140 e e e e e e e e e e e e collector-emitter saturation voltage (i c = 10 ma, i b = 0.3 ma) (i c = 10 ma, i b = 5 ma) mun5330dw1t1/mun5331dw1t1 (i c = 10 ma, i b = 1 ma) mun5315dw1t1/mun5316dw1t1 mun5332dw1t1/mun5333dw1t1/mun5334dw1t1 v ce(sat) e e 0.25 vdc output voltage (on) (v cc = 5.0 v, v b = 2.5 v, r l = 1.0 k w ) mun5311ldw1t1 mun5312dw1t1 MUN5314DW1T1 mun5315dw1t1 mun5316dw1t1 mun5330dw1t1 mun5331dw1t1 mun5332dw1t1 mun5333dw1t1 mun5334dw1t1 mun5335dw1t1 (v cc = 5.0 v, v b = 3.5 v, r l = 1.0 k w ) mun5313dw1t1 v ol e e e e e e e e e e e e e e e e e e e e e e e e 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 vdc 3. pulse test: pulse width < 300 m s, duty cycle < 2.0% 3 motorola smallsignal transistors, fets and diodes device data electrical characteristics (t a = 25 c unless otherwise noted, common for q 1 and q 2 , minus sign for q 2 (pnp) omitted) (continued) characteristic symbol min typ max unit output voltage (off) (v cc = 5.0 v, v b = 0.5 v, r l = 1.0 k w ) (v cc = 5.0 v, v b = 0.050 v, r l = 1.0 k w ) mun5330dw1t1 (v cc = 5.0 v, v b = 0.25 v, r l = 1.0 k w ) mun5315dw1t1 mun5316dw1t1 mun5333dw1t1 v oh 4.9 e e vdc input resistor mun5311dw1t1 mun5312dw1t1 mun5313dw1t1 MUN5314DW1T1 mun5315dw1t1 mun5316dw1t1 mun5330dw1t1 mun5331dw1t1 mun5332dw1t1 mun5333dw1t1 mun5334dw1t1 mun5335dw1t1 r1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 k w resistor ratio mun5311dw1t1/mun5312dw1t1/mun5313dw1t1 MUN5314DW1T1 mun5315dw1t1/mun5316dw1t1 mun5330dw1t1/mun5331dw1t1/mun5332dw1t1 mun5333dw1t1 mun5334dw1t1 mun5335dw1t1 r1/r2 0.8 0.17 e 0.8 0.055 0.38 0.038 1.0 0.21 e 1.0 0.1 0.47 0.047 1.2 0.25 e 1.2 0.185 0.56 0.056 figure 1. derating curve 250 200 150 100 50 0 50 0 50 100 150 t a , ambient temperature ( c) p d , power dissipation (milliwatts) r q ja = 833 c/w 4 motorola smallsignal transistors, fets and diodes device data typical electrical characteristics e mun5311dw1t1 npn transistor v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 2. v ce(sat) versus i c 10 02030 i c , collector current (ma) 10 1 0.1 t a = 25 c 75 c 25 c 40 50 figure 3. dc current gain figure 4. output capacitance 1 0.1 0.01 0.001 020 40 50 i c , collector current (ma) v ce(sat) , maximum collector voltage (volts) 1000 100 10 1 10 100 i c , collector current (ma) t a =75 c 25 c 25 c t a = 25 c 25 c figure 5. output current versus input voltage 75 c 25 c t a = 25 c 100 10 1 0.1 0.01 0.001 01 234 v in , input voltage (volts) 56 78 910 figure 6. input voltage versus output current 50 010203040 4 3 1 2 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) 75 c v ce = 10 v f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 5 motorola smallsignal transistors, fets and diodes device data typical electrical characteristics e mun5311dw1t1 pnp transistor v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 7. v ce(sat) versus i c 100 10 1 0.1 0.01 0.001 0 v in , input voltage (volts) t a = 25 c 25 c 12345 678910 figure 8. dc current gain figure 9. output capacitance figure 10. output current versus input voltage figure 11. input voltage versus output current 0.01 20 i c , collector current (ma) v ce(sat) , maximum collector voltage (volts) 0.1 1 040 50 1000 1 10 100 i c , collector current (ma) t a =75 c 25 c 100 10 0 i c , collector current (ma) 0.1 1 10 100 10 20 30 40 50 t a = 25 c 25 c 75 c 75 c i c /i b = 10 50 010 203040 4 3 1 2 v r , reverse bias voltage (volts) c ob , capacitance (pf) 0 t a = 25 c 25 c 75 c 25 c v ce = 10 v f = 1 mhz l e = 0 v t a = 25 c v o = 5 v v o = 0.2 v 6 motorola smallsignal transistors, fets and diodes device data typical electrical characteristics e mun5312dw1t1 npn transistor v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 12. v ce(sat) versus i c figure 13. dc current gain figure 14. output capacitance figure 15. output current versus input voltage 1000 10 i c , collector current (ma) t a =75 c 25 c 25 c 100 10 1 100 75 c 25 c 100 0 v in , input voltage (volts) 10 1 0.1 0.01 0.001 246810 t a = 25 c 0 i c , collector current (ma) 100 t a = 25 c 75 c 10 1 0.1 10 20 30 40 50 25 c figure 16. input voltage versus output current 0.001 v ce(sat) , maximum collector voltage (volts) t a = 25 c 75 c 25 c 0.01 0.1 1 40 i c , collector current (ma) 0 20 50 50 0 10 203040 4 3 2 1 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) i c /i b = 10 v ce = 10 v f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v 7 motorola smallsignal transistors, fets and diodes device data typical electrical characteristics e mun5312dw1t1 pnp transistor v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 17. v ce(sat) versus i c figure 18. dc current gain 1000 10 i c , collector current (ma) 100 10 1 100 figure 19. output capacitance i c , collector current (ma) 0 10 20 30 v o = 0.2 v t a = 25 c 75 c 100 10 1 0.1 40 50 figure 20. output current versus input voltage 100 10 1 0.1 0.01 0.001 01 2 3 4 v in , input voltage (volts) 56 78910 figure 21. input voltage versus output current 0.01 v ce(sat) , maximum collector voltage (volts) 0.1 1 10 40 i c , collector current (ma) 020 50 75 c 25 c t a = 25 c 50 010203040 4 3 2 1 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) 25 c i c /i b = 10 25 c 25 c v ce = 10 v t a =75 c f = 1 mhz l e = 0 v t a = 25 c 75 c 25 c t a = 25 c v o = 5 v 8 motorola smallsignal transistors, fets and diodes device data typical electrical characteristics e mun5313dw1t1 npn transistor v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 22. v ce(sat) versus i c 0246810 100 10 1 0.1 0.01 0.001 v in , input voltage (volts) t a = 25 c 75 c 25 c figure 23. dc current gain figure 24. output capacitance 100 10 1 0.1 010 20 3040 50 i c , collector current (ma) figure 25. output current versus input voltage 1000 10 i c , collector current (ma) t a =75 c 25 c 25 c 100 10 1 100 25 c 75 c 50 010203040 1 0.8 0.6 0.4 0.2 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) figure 26. input voltage versus output current 0 20 40 50 10 1 0.1 0.01 i c , collector current (ma) 25 c 75 c v ce(sat) , maximum collector voltage (volts) v ce = 10 v f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 t a = 25 c t a = 25 c 9 motorola smallsignal transistors, fets and diodes device data typical electrical characteristics e mun5313dw1t1 pnp transistor v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 27. v ce(sat) versus i c i c , collector current (ma) 1 0.1 0.01 010203040 75 c 25 c v ce(sat) , maximum collector voltage (volts) figure 28. dc current gain 1000 100 10 1 10 100 i c , collector current (ma) 25 c figure 29. output capacitance figure 30. output current versus input voltage 100 10 1 0.1 0.01 0.001 010 25 c v in , input voltage (volts) 25 c 50 010203040 1 0.8 0.6 0.4 0.2 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) 123456 789 figure 31. input voltage versus output current 100 10 1 0.1 010203040 i c , collector current (ma) t a = 25 c 25 c 75 c 50 i c /i b = 10 t a = 25 c 25 c t a =75 c f = 1 mhz l e = 0 v t a = 25 c v o = 5 v t a =75 c v o = 0.2 v 10 motorola smallsignal transistors, fets and diodes device data typical electrical characteristics e MUN5314DW1T1 npn transistor 10 1 0.1 01020304050 100 10 1 0246810 4 3.5 3 2.5 2 1.5 1 0.5 0 02468101520253035404550 v r , reverse bias voltage (volts) v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 32. v ce(sat) versus i c i c , collector current (ma) 020406080 v ce(sat) , maximum collector voltage (volts) figure 33. dc current gain 1 10 100 i c , collector current (ma) figure 34. output capacitance figure 35. output current versus input voltage v in , input voltage (volts) c ob , capacitance (pf) figure 36. input voltage versus output current i c , collector current (ma) 1 0.1 0.01 0.001 25 c 25 c t a =75 c v ce = 10 300 250 200 150 100 50 0 2468 1520405060708090 f = 1 mhz l e = 0 v t a = 25 c 25 c i c /i b = 10 t a = 25 c t a =75 c 25 c 25 c v o = 0.2 v t a = 25 c 75 c v o = 5 v 25 c 75 c 11 motorola smallsignal transistors, fets and diodes device data typical electrical characteristics e MUN5314DW1T1 pnp transistor 10 1 0.1 010 20 30 40 50 100 10 1 0246810 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 101520253035404550 v r , reverse bias voltage (volts) v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 37. v ce(sat) versus i c i c , collector current (ma) 020406080 v ce(sat) , maximum collector voltage (volts) figure 38. dc current gain 1 10 100 i c , collector current (ma) figure 39. output capacitance figure 40. output current versus input voltage v in , input voltage (volts) c ob , capacitance (pf) figure 41. input voltage versus output current i c , collector current (ma) 1 0.1 0.01 0.001 25 c 25 c t a =75 c v ce = 10 v 180 160 140 120 100 80 60 40 20 0 2 4 6 8 15 20 40 50 60 70 80 90 f = 1 mhz l e = 0 v t a = 25 c 25 c i c /i b = 10 t a = 25 c t a =75 c 25 c 25 c v o = 5 v v o = 0.2 v 25 c t a = 25 c 75 c 75 c 12 motorola smallsignal transistors, fets and diodes device data typical electrical characteristics e mun5315dw1t1 figure 42. dc current gain e pnp i c , collector current (ma) 1.0 10 100 h fe , dc current gain (normalized) 1000 100 figure 43. dc current gain e npn i c , collector current (ma) 1.0 10 100 h fe , dc current gain (normalized) 1000 100 t a = 25 c v ce = 5.0 v v ce = 10 v t a = 25 c v ce = 5.0 v v ce = 10 v typical electrical characteristics e mun5316dw1t1 figure 44. dc current gain e pnp i c , collector current (ma) 1.0 10 100 h fe , dc current gain (normalized) 1000 100 figure 45. dc current gain e npn i c , collector current (ma) 1.0 10 100 h fe , dc current gain (normalized) 1000 100 t a = 25 c v ce = 5.0 v v ce = 10 v t a = 25 c v ce = 5.0 v v ce = 10 v 13 motorola smallsignal transistors, fets and diodes device data information for using the sot363 surface mount package minimum recommended footprints for surface mounted applications surface mount board layout is a critical portion of the total design. the footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. with the correct pad geometry, the packages will self align when subjected to a solder reflow process. sot363 0.5 mm (min) 0.4 mm (min) 0.65 mm 0.65 mm 1.9 mm sot363 power dissipation the power dissipation of the sot363 is a function of the pad size. this can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. power dissipation for a surface mount device is determined by t j(max) , the maximum rated junction tempera- ture of the die, r q ja , the thermal resistance from the device junction to ambient; and the operating temperature, t a . using the values provided on the data sheet, p d can be calculated as follows: p d = t j(max) t a r q ja the values for the equation are found in the maximum ratings table on the data sheet. substituting these values into the equation for an ambient temperature t a of 25 c, one can calculate the power dissipation of the device which in this case is 150 milliwatts. p d = 150 c 25 c 833 c/w = 150 milliwatts the 833 c/w for the sot363 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts. there are other alternatives to achieving higher power dissipation from the sot363 package. another alternative would be to use a ceramic substrate or an aluminum core board such as thermal clad ? . using a board material such as thermal clad, an aluminum core board, the power dissipation can be doubled using the same footprint. soldering precautions the melting temperature of solder is higher than the rated temperature of the device. when the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. ? always preheat the device. ? the delta temperature between the preheat and soldering should be 100 c or less.* ? when preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. when using infrared heating with the reflow soldering method, the difference should be a maximum of 10 c. ? the soldering temperature and time should not exceed 260 c for more than 10 seconds. ? when shifting from preheating to soldering, the maximum temperature gradient should be 5 c or less. ? after soldering has been completed, the device should be allowed to cool naturally for at least three minutes. gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. ? mechanical stress or shock should not be applied during cooling. * soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. 14 motorola smallsignal transistors, fets and diodes device data solder stencil guidelines prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. a solder stencil is required to screen the optimum amount of solder paste onto the footprint. the stencil is made of brass or stainless steel with a typical thickness of 0.008 inches. the stencil opening size for the surface mounted package should be the same as the pad size on the printed circuit board, i.e., a 1:1 registration. typical solder heating profile for any given circuit board, there will be a group of control settings that will give the desired heat pattern. the operator must set temperatures for several heating zones, and a figure for belt speed. taken together, these control settings make up a heating aprofileo for that particular circuit board. on machines controlled by a computer, the computer remembers these profiles from one operating session to the next. figure 25 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. this profile will vary among soldering systems but it is a good starting point. factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. this profile shows temperature versus time. the line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. the two profiles are based on a high density and a low density board. the vitronics smd310 convection/infrared reflow soldering system was used to generate this profile. the type of solder used was 62/36/2 tin lead silver with a melting point between 177 189 c. when this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. the components on the board are then heated by conduction. the circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. step 1 preheat zone 1 arampo step 2 vent asoako step 3 heating zones 2 & 5 arampo step 4 heating zones 3 & 6 asoako step 5 heating zones 4 & 7 aspikeo step 6 vent step 7 cooling 200 c 150 c 100 c 50 c time (3 to 7 minutes total) t max solder is liquid for 40 to 80 seconds (depending on mass of assembly) 205 to 219 c peak at solder joint desired curve for low mass assemblies 100 c 150 c 160 c 140 c figure 46. typical solder heating profile desired curve for high mass assemblies 170 c 15 motorola smallsignal transistors, fets and diodes device data package dimensions case 419b01 issue c notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. dim a min max min max millimeters 1.80 2.20 0.071 0.087 inches b 1.15 1.35 0.045 0.053 c 0.80 1.10 0.031 0.043 d 0.10 0.30 0.004 0.012 g 0.65 bsc 0.026 bsc h 0.10 0.004 j 0.10 0.25 0.004 0.010 k 0.10 0.30 0.004 0.012 n 0.20 ref 0.008 ref s 2.00 2.20 0.079 0.087 v 0.30 0.40 0.012 0.016 b 0.2 (0.008) mm 123 a g v s h c n j k 654 b d 6 pl style 1: pin 1. emitter 2 2. base 2 3. collector 1 4. emitter 1 5. base 1 6. collector 2 16 motorola smallsignal transistors, fets and diodes device data motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. atypicalo parameters which may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a situation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and are registered trademarks of motorola, inc. motorola, inc. is an equal opportunity/affirmative action employer. mfax is a trademark of motorola, inc. how to reach us: usa / europe / locations not listed : motorola literature distribution; japan : nippon motorola ltd.; tatsumispdjldc, 6f seibubutsuryucenter, p.o. box 5405, denver, colorado 80217. 3036752140 or 18004412447 3142 tatsumi kotoku, tokyo 135, japan. 81335218315 mfax ? : rmfax0@email.sps.mot.com touchtone 6 022446609 asia / pacific : motorola semiconductors h.k. ltd.; 8b tai ping industrial park, internet : http://www.mot.com/sps/ 51 ting kok r oad, tai po, n.t., hong kong. 85226629298 mun5311dw1t1/d ? |
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