, d na. 20 stern ave. springfield, new jersey 070c1 u.s.a. silicon npn power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 BUY49P description ? high collector-emitter sustaining voltage- : vceo(sus) = 200v(min) ? high current capability applications ? designed for high-current switching applications. absolute maximum ratings(ta=25'c) symbol vcbo vceo vebo ic icm pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak collector power dissipation t?3\t ocp (gj i c-" >- junction temperature storage temperature range value 250 200 6 3.0 5.0 15 150 -65-150 thermal characteristics symbol rthj-c parameter thermal resistance.junction to case unit v v v a a w 'c 'c max 8.33 unit 'c/w ? .-cj - pin l.ailtter ! i. collector ., i . 3. base 1 2 3 to-1 26 package r^ r 1 ' h - r -f c^ \5 6 !? 2 3 dim a b c d f g h k 0 r y v 1 if i : i f ~v ' k ~* ?-* j mm win max 10.70 10.90 7.70 7.90 2.60 2.80 0.66 0.86 3.10 3jo 4.48 4.68 2.00 2.20 it ^r 1_wl 16.10 16.30 3.70 3.90 0.40 0.60 1.17 1.37 cp *-r nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of"going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon npn power transistor BUY49P electrical characteristics tc=25c unless otherwise specified symbol vceo(sus) v(br)cbo v(br)ebo vce(sat) vbe(sat) icbo hpe-1 hfe-2 hfe-3 fl cob parameter collector-emitter sustaining voltage collector-base breakdown voltage emitter-base breakdown voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current dc current cain dc current cain dc current cain current-gain ? bandwidth product output capacitance conditions lc= 20ma; le= 0 lc=0.1ma;le=0 |e=1ma;lc=0 lc= 500ma; ib= 50ma lc= 500ma; ib= 50ma vcb= 200v; ie= 0 lc= 20ma; vce= 2v lc= 20ma; vce= 5v lc= 0.5ma; vce= 5v lc=100ma;vce=10v ie= 0; vcb= 10v; f,est= 1.0mhz min 200 250 6 30 40 40 30 typ. max 0.2 1.1 0.1 50 unit v v v v v ua mhz pf switching times ton toff turn-on time turn-off time lc= 0.5a; ib1= -is2= 50ma; vgc= 20v 0.8 2.5 n s n s
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