BLX65 u.h.f./v.h.f. transmitting transistor n-p-n transistor intended for use in class-b and c operated mobile, industrial and military transmitters with a supply voltage of 13,8 v. it has a to-39 metal envelope with the collector connected to the case. quick reference data r.f. performance up to tcase = 25 c in an unneutralized common-emitter class-b circuit mode of operation c.w. c.w. c.w. vce v 13,8 12,5 12,5 f mhz 470 470 175 ps w typ. 0,4 < 0,5 typ. 0,12 pl w 2,0 2,0 2,0 ig a typ. 0,22 < 0,25 typ. 0,21 gb db typ. 7 > 6 typ. 12 i? % typ. 66 > 65 typ. 75 zj n 5 + j11 ? ? vl ms 17-j19 ? ? mechanical data fig.1 to 39/1; collector connected to case. dimensions in mm 8,5 max max ^max maximum lead diameter is guaranteed only for 12,7 mm. nj semi-conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. ni semi-conductors encourages customers to verify that datasheets are current before placing orders.
ratings limiting values in accordance with the absolute maximum system (iec134) collector-base voltage (open emitter) peak value collector-emitter voltage (vg^ = 0) peak value collector-emitter voltage (open base) emitter-base voltage (open collector) collector current (average) collector current (peak value) f > 1 mhz total power dissipation up to tcase = 90 c f > 10 mhz storage temperature operating junction temperature thermal resistance from junction to case from mounting base to heatsink with a boron nitride washer for electrical insulation vcbom max- 36 v vcesm vceo vebo ic(av) icm ptot tstg ti rth j-c rth mb-h max. max. max. max. max. max. -65 to max = ^ 36 18 4 0.7 2.0 3.0 +150 165 25 2.5 v v v a a w c c k/w k/w characteristics tj = 25 c unless otherwise specified breakdown voltages collector-base voltage open emitter, ic = 10 ma collector-emitter voltage vbe = 0; ic = 10 ma collector-emitter voltage open base, ig = 25 ma emitter-base voltage open collector, ie = 1,0 ma collector-emitter saturation voltage 1c = 100 ma; ib = 20 ma d. c. current gain iq = 100 ma; vce = 5 v transition frequency ic = 200 ma; vce = 5 v; f = 500 mhz collector capacitance at f = 1 mhz ie = ie = 0; vcb = 10 v feedback capacitance at f = 1 mhz ic = 20 ma; vce = 10 v v(br)cbo > v(br)ces > v(br)ceo > v(br)ebo > vcesat typ. hfe w. 36 36 18 4 0.1 10 40 v v v v v ft typ. 1400 mhz -ct typ. typ. 6.5 pf 9.0 pf 4.8 pf
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