rev. date: 28-nov- 13 preliminary www .auk.co.kr 1 of 4 SGTN50A36FD insulated gate bipolar transistor, igbt 360v, 50a high speed punch through igbt features ? low gate charge ? punch through technology ? low saturation voltage: v ce(sat) = 1.6v (@ ic = 50a, tc = 25 ? c) ? rohs compliant product applications ? general purpose inverters ? pdp ? ups ordering information part number marking package SGTN50A36FD n50a36 to-220f absolute maximum ratings (t c =25 ? c unless otherwise noted) characteristic symbol rating unit collector-emitter voltage v ces 360 v continuous collector current (1) i c t c =25 ? c 100 a t c =100 ? c 50 a pulsed collector current (2) i cm 240 a gate-emitter voltage v ges ? 30 v turn-off safe area - 200 a power dissipation p d 30 w operating and storage temperature range t j, t stg -55 to 150 ? c maximum lead temperature for soldering purpose t l 300 ? c 1) collector current limited by maximum junction temperature 2) pulse width limited by maximum junction temperature and turn-off within rbsoa. auk ymdd sdb20d45 auk ymdd sdb20d45 column 1: manufacturer column 2: production information e.g.) ymdd -. : factory management code -. ymdd: date code (year, month, date) column 3: device code to-220f-3l g c e auk ymdd n50a36
rev. date: 28-nov- 13 preliminary www .auk.co.kr 2 of 4 thermal characteristics characteristic symbol rating unit thermal resistance, junction to case r th(j-c) max. 4.16 ? c/w thermal resistance, junction to ambient r th(j-a) max. 62.5 electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol test condition min. typ. max. unit off-characteristics collector-emitter breakdown voltage bv ces i c =500ua, v gs =0 360 - - v breakdown voltage temperature coefficient bv ces / t j i c =1ma, reference to 25 ? c - 0.5 - v/ ? c zero gate voltage collector current i ces v ce =360v, v gs =0v, t c =25 ? c - - 10 ua gate-body leakage current i gss v ds =0v, v gs = ? 30v - - ? 400 na on-characteristics gate threshold voltage v ge(th) v ce =v ge , i c =250ua 2 - 4.5 v collector-emitter saturation voltage v ce(sat) v ge =15v, i c =35a - 1.4 1.6 v v ge =15v, i c =50a - 1.6 1.8 v dynamic-characteristics input capacitance c ies v ce =25v, v ge =0v, f=1mhz - 1500 - pf output capacitance c oes - 100 - reverse transfer capacitance c res - 50 - turn-on delay time (3),(4) t d(on) v ce =200v, i c =35a, r g =5 ? - 30 - ns rise time (3),(4) t r - 100 - turn-off delay time (3),(4) t d(off) - 100 - fall time (3),(4) t f - 150 - total gate charge (3),(4) q g v ce =150v, v ge =15v, i c =35a - 67 - nc gate-emitter charge (3),(4) q ge - 11.7 - gate-collector charge (3),(4) q gs - 23.5 - 3) pulse test: pulse width 300us, duty cycle 2% 4) essentially independent of operatin g temperature typical characteristics SGTN50A36FD
rev. date: 28-nov- 13 preliminary www .auk.co.kr 3 of 4 package outline dimensions SGTN50A36FD
rev. date: 28-nov- 13 preliminary www .auk.co.kr 4 of 4 the auk corp. products are intended for the use as components in general electronic equipment (office and communication eq uipment, measuring equipment, home appliance, etc.). please make sure that you consult with us before you use these auk corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion contro l, all types of safety device, etc.). auk corp. cannot accept liability to any damage which may occur in case these auk corp. products were used in the mentioned equipm ents without prior consultation with auk corp.. specifications mentioned in this publicat ion are subject to change without notice. SGTN50A36FD
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