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^s-mi-dondilctoi ij-*redacts., unc. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 PMD11K100 pnp power darlington absolute maximum ratings parameter collector emitter voltage collector base voltage emitter base voltaoe collector current continuous peak base current thermal resistance total internal power dissipation @ tc = 50c1 operating junction and storage temperature symbol vcfo veto vebo ic ib ejc pd tj tstg maximum 100 100 5 12 20 0.2 1.0 150 -65 to +200 units vdc vdc vdc adc adc "c/watt watts c " for operation above tc = 50c, derate all parameters are guaranteed at t, = 0 to 200c, unless otherwise specified. parameter symbol on characteristics collector emitter saturation voltage1 base emitter turn-on voltage1 base emitter saturation1 dc current gain1 vce(sat) vbe(oh) vbe(mi) hfe test conditions minimum maximum units lc = 6 adc; ib = 24 madc lc = 6 adc; vce = 3 vdc lc = 6 adc; ib = 24 madc lc = 6 adc; vce = 3 vdc l = 25c 800 2.0 2.8 2.8 20,000 vdc vdc vdc off characteristics forward bias secondary breakdown current collector emitter breakdown voltage1 (base onen) collector emitter sustaining voltage1 emitter base leakage current collector emitter leakage current is/b v(br)ceo v(br)ceo iebo icer vce = 30 vdc; ta = 25c 1 sec non-repetitive pulse ice = 100 madc; tj = 25c ice = 100 madc; rbe = 2,2kn veb = 5 vdc; lc = oa vce = 67 vdc; rbe = 2.2w1 5.0 100 100 3.0 5.0 adc vdc vdc madc madc dynamic characteristics output capacitance small signal current gain common emitter short circuit forward transfer ratio cob h,e hi. vcb = 10 vdc; ie = 0 adc f = 1 mhz; tj = 25c lc = 5 adc; vce = 3 vdc f = 1 khz; tj = 25c lc = 5 adc; vce = 3 vdc f = 1 mhz; l = 25c 300 4 300 pf (1) pulse tested with pulse width ' 300 m-s and duty cycle s 2.0%.

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Price & Availability of PMD11K100

Part #	Manufacturer	Description	Price	BuyNow Qty.
PMD11K100 2383-PMD11K100-ND	Solid State Inc	TRANS PNP DARL 100V 12A TO3	10: USD2	50

Part #	Manufacturer	Description	Price	BuyNow Qty.
PMD11K100 70911434	Solid State Manufacturing	NPN-SILICON 12 Amp Darlington TO-3 \| Solid State Manufacturing PMD11K100	10: USD3.03	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
PMD11K100	TDK-Lambda Corporation	Bipolar Junction Transistor, Darlington, PNP Type, TO-3	4: USD15 1: USD20	3
PMD11K100	LAMBDA Electronics Trading Ltd	Bipolar Junction Transistor, Darlington, PNP Type, TO-3	27: USD35.7 14: USD37.8 1: USD42	28
PMD11K100	Lamb Industries	Bipolar Junction Transistor, Darlington, PNP Type, TO-3	14: USD18.5 5: USD20 1: USD22.5	16

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