STN4110 n channel enhancement mode mosfe t 40.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com . STN4110 2010. v1 description STN4110 is used trench technology to provide excell ent rds(on) and gate charge. those devices are ideal for boost converters and sy nchronous rectifiers for consumer, telecom, industrial power supplies and led backligh ting. pin configuration (d-pak) to-252 to-251 part marking y: year code a: date code q:process code feature 60v/20.0a, r ds(on) = 10m (typ.) @v gs = 10v 60v/20.0a, r ds(on) = 12m @v gs = 4.5v super high density cell design for extremely low r ds(on) exceptional onresistance and maximum dc current capability to252,to251 package design
STN4110 n channel enhancement mode mosfe t 40.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com . STN4110 2010. v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drainsource voltage vdss 60 v gatesource voltage vgss 20 v continuous drain current (tj=150 ) ta=25 ta=70 id 40.0 40.0 a pulsed drain current idm 180 a continuous source current (diode conduction) is 46 a power dissipation ta=25 ta=70 pd 63 31 w operation junction temperature tj 175 storgae temperature range tstg 55/175 thermal resistancejunction to ambient rja 16 /w
STN4110 n channel enhancement mode mosfe t 40.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com . STN4110 2010. v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drain source breakdown voltage v (br)dss v gs =0v,id=250ma 60 v gate threshold voltage v gs(th) v ds =v gs ,id=250ua 1 3 v gate leakage current i gss v ds =0v,v gs =20v 0.1 ua zero gate voltage drain current i dss v ds =60v,v gs =0v 1 na v ds =48v,v gs =0v t j =55 5 drainsource on resistance r ds(on) v gs =10v,i d =20a v gs =4.5v,i d =20a 10 12 12 15 m forward transconductance gfs v ds =5v,i d =20a 55 s diode forward voltage v sd i s =1.0a,v gs =0v 0.65 1.0 v dynamic total gate charge q g v gs =10v,v ds =20v i d 20a 29 35 nc gatesource charge q gs 4.8 gatedrain charge q gd 7.8 input capacitance c iss v ds =20v,v gs =0v f=1mhz 1590 1800 pf output capacitance c oss 105 reverse transfercapacitance c rss 69 turnon time t d(on) tr v ds =20v, v gs =10v r l = 0.75 v gen =3 7.8 ns 6.5 turnoff time t d(off) tf 33 7.5
STN4110 n channel enhancement mode mosfe t 40.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com . STN4110 2010. v1 typical characterictics
STN4110 n channel enhancement mode mosfe t 40.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com . STN4110 2010. v1 typical characterictics
STN4110 n channel enhancement mode mosfe t 40.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com . STN4110 2010. v1 typical characterictics
STN4110 n channel enhancement mode mosfe t 40.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com . STN4110 2010. v1
STN4110 n channel enhancement mode mosfe t 40.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com . STN4110 2010. v1 to-252-2l package outline sop-8p
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