ntgd3149c power mosfet complementary, 20 v, +3.5/ ? 2.7 a, tsop ? 6 dual features ? complementary n ? channel and p ? channel mosfet ? small size (3 x 3 mm) dual tsop ? 6 package ? leading edge trench technology for low on resistance ? reduced gate charge to improve switching response ? independently connected devices to provide design flexibility ? this is a pb ? free device applications ? dc ? dc conversion circuits ? load/power switching with level shift maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain ? to ? source voltage v dss 20 v gate ? to ? source voltage (n ? ch & p ? ch) v gs 8 v n ? channel continuous drain current (note 1) steady state t a = 25 c t a = 85 c i d 3.2 2.3 a t 5 s t a = 25 c 3.5 p ? channel continuous drain current (note 1) steady state t a = 25 c t a = 85 c i d 2.4 1.7 a t 5 s t a = 25 c 2.7 power dissipation (note 1) steady state t a = 25 c p d 0.9 w t 5 s 1.1 pulsed drain current n ? ch t p = 10 s i dm 11 a p ? ch 8.0 operating junction and storage temperature t j , t stg ? 55 to 150 c source current (body diode) i s 0.8 a lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c thermal resistance ratings parameter symbol value unit junction ? to ? ambient ? steady state (note 1) r ja 140 c/w junction ? to ? ambient ? t 5 s (note 1) r ja 110 c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces). g2 d2 p ? channel mosfet s2 cc = specific device code m = date code = pb ? free package (note: microdot may be in either location) tsop ? 6 case 318g style 13 marking diagram (top view) see detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. ordering information pin connection n ? ch 20 v 90 m @ 2.5 v 60 m @ 4.5 v r ds(on) max 3.5 a i d max (note 1) v (br)dss 110 m @ 4.5 v 145 m @ 2.5 v g1 s1 n ? channel mosfet d1 p ? ch ? 20 v cc m 1 1 ? 2.7 a 4 5 6 3 2 1 d1 s1 d2 g1 s2 g2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 1 of 3 smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol n/p test conditions min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss n v gs = 0 v i d = 250 a 20 v p i d = ? 250 a ? 20 drain ? to ? source breakdown voltage temperature coefficient v (br)dss /t j n 1.1 mv/ c p 1.1 zero gate voltage drain current i dss n v gs = 0 v, v ds = 16 v t j = 25 c 1.0 a p v gs = 0 v, v ds = ? 16 v ? 1.0 n v gs = 0 v, v ds = 16 v t j = 85 c 10 p v gs = 0 v, v ds = ? 16 v ? 10 gate ? to ? source leakage current i gss n v ds = 0 v, v gs = 8 v 100 na p v ds = 0 v, v gs = 8 v 100 on characteristics (note 2) gate threshold voltage v gs(th) n v gs = v ds i d = 250 a 0.4 1.0 v p i d = ? 250 a ? 0.4 ? 1.0 drain ? to ? source on resistance r ds(on) n v gs = 4.5 v , i d = 3.5 a 41 60 m p v gs = ? 4.5 v , i d = ? 2.7 a 83 110 n v gs = 2.5 v , i d = 2.9 a 51 90 p v gs = ? 2.5 v , i d = ? 2.4 a 104 145 n v gs = 1.8 v , i d = 2.2 a 67 150 p v gs = ? 1.8 v , i d = ? 1.9 a 143 220 forward transconductance g fs n v ds = 10 v , i d = 3.5 a 4.7 s p v ds = ? 10 v , i d = ? 2.7 a 5.1 charges and capacitances input capacitance c iss n f = 1 mhz, v gs = 0 v v ds = 10 v 387 pf output capacitance c oss 73 reverse transfer capacitance c rss 43 input capacitance c iss p v ds = ? 10 v 509 output capacitance c oss 76 reverse transfer capacitance c rss 40 total gate charge q g(tot) n v gs = 4.5 v, v ds = 10 v, i d = 2.0 a r g = 6 4.6 5.5 nc threshold gate charge q g(th) 0.3 gate ? to ? source gate charge q gs 0.7 gate ? to ? drain ?miller? charge q gd 1.2 total gate charge q g(tot) p v gs = ? 4.5 v, v ds = ? 10 v, i d = ? 1.0 a r g = 6 5.2 5.5 threshold gate charge q g(th) 0.4 gate ? to ? source gate charge q gs 1.0 gate ? to ? drain ?miller? charge q gd 1.2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 2 of 3 ntgd3149c smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
electrical characteristics (t j = 25 c unless otherwise noted) parameter unit max typ min test conditions n/p symbol switching characteristics (note 3) turn ? on delay time t d(on) n v gs = 4.5 v, v dd = 10 v, i d = 1.0 a, r g = 6.0 6.5 ns rise time t r 3.8 turn ? off delay time t d(off) 16.4 fall time t f 2.4 turn ? on delay time t d(on) p v gs = ? 4.5 v, v dd = ? 10 v, i d = ? 1.0 a, r g = 6.0 7.0 rise time t r 5.3 turn ? off delay time t d(off) 33.3 fall time t f 29.5 drain ? source diode characteristics forward diode voltage v sd n v gs = 0 v, t j = 25 c i s = 0.8 a 0.7 1.2 v p i s = ? 0.8 a ? 0.7 ? 1.2 reverse recovery time t rr n v gs = 0 v, di s / dt = 100 a/ s 7.7 ns charge time t a 4.5 discharge time t b 3.2 reverse recovery charge q rr 1.9 nc reverse recovery time t rr p v gs = 0 v, di s / dt = 100 a/ s 11.4 ns charge time t a 7.5 discharge time t b 3.9 reverse recovery charge q rr 4.7 nc 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures. ordering information device package shipping ? NTGD3149CT1G tsop6 (pb ? free) 3000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 3 of 3 ntgd3149c smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
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