ntgd3148n power mosfet 20 v, 3.5 a, dual n-channel, tsop-6 features ? low threshold levels, vgs(th) < 1.5 v ? low gate charge (3.8 nc) ? leading edge trench technology of low r ds(on) ? high power and current handling capability ? this is a pb-free device applications ? dc-dc converters (buck and boost circuits) ? low side load switch ? optimized for battery and load management applications in portable equipment like cell phones, dscs, media player, etc ? battery charging and protection circuits maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain-to-source voltage v dss 20 v gate-to-source voltage v gs 12 v continuous drain current (note 1) steady state t a = 25 c i d 3.0 a t a = 85 c 2.2 continuous drain current (note 1) t 5 s t a = 25 c i d 3.5 a power dissipation (note 1) steady state t a = 25 c p d 0.9 w t 5 s 1.1 pulsed drain current t p = 10 s i dm 10 a operating junction and storage temperature t j , t stg -50 to 150 c source current (body diode) i s 0.8 a lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c thermal resistance ratings parameter symbol value unit junction-to-ambient C steady state (note 1) r ja 140 c/w junction-to-ambient C t 5 s (note 1) r ja 110 c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces). n-channel mosfet 20 v 100 m @ 2.5 v 70 m @ 4.5 v r ds(on) max i d max v (br)dss n-channel mosfet 3.5 a dn = specific device code m = date code = pb-free package (note: microdot may be in either location) tsop-6 case 318g style 13 marking diagram dn m 1 1 4 (top view) pin connection see detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ordering information g s d 5 6 3 2 1 d 2 s 1 d 1 g 2 s 2 g 1 smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 1 of 2
mosfet electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol test condition min typ max unit off characteristics drain-to-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 20 v drain-to-source breakdown voltage temperature coefficient v (br)dss /t j i d = 250 a, ref to 25 c 12.5 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 16 v t j = 25 c 1.0 a t j = 125 c 10 gate-to-source leakage current i gss v ds = 0 v, v gs = 12 v 100 na on characteristics (note 2) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 0.5 1.5 v gate threshold temperature coefficient v gs(th) /t j 3.28 mv/ c drain-to-source on resistance r ds(on) v gs = 4.5 v i d = 3.5 a 41.7 70 m v gs = 2.5 v i d = 2.8 a 58 100 forward transconductance g fs v ds = 5.0 v, i d = 3.5 a 6.2 s charges, capacitances and gate resistance input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = 10 v 300 pf output capacitance c oss 73 reverse transfer capacitance c rss 44 total gate charge q g(tot) v gs = 4.5 v, v ds = 10 v, i d = 3.5 a 3.8 nc threshold gate charge q g(th) 0.3 gate-to-source charge q gs 0.7 gate-to-drain charge q gd 1.1 gate resistance rg 2.8 switching characteristics (note 3) turn-on delay time t d(on) v gs = 4.5 v, v ds = 10 v, i d = 3.5 a, r g = 3.0 7.4 ns rise time t r 11.2 turn-off delay time t d(off) 12.8 fall time t f 1.6 drain-to-source characteristics forward diode voltage v sd v gs = 0 v i d = 0.8 a t j = 25 c 0.71 v t j = 125 c 0.57 reverse recovery time t rr v gs = 0 v, d is /d t = 100 a/ s, i s = 0.8 a 9.0 ns charge time t a 5.0 discharge time t b 4.0 reverse recovery time q rr 2.5 nc 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures. ordering information device package shipping ? NTGD3148NT1G tsop-6 (pb-free) 3000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. ntgd3148n smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 2 of 2
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