mitsubishi laser diodes ml9xx41 series ingaasp dfb-laser diode with ea modulator type name ML9SM41 description ml9xx41 series are dfb (distribut ed feedback) laser diodes with a monolithically integrated ea modulator, suitable light source for 10gbps application. ML9SM41 is supplied with the chip-on-carrier type package. features ? dispersion penalty less than 2db at 9.95328gbps, +1600ps/nm ? high extinction ratio (min. 10db at 9.95328gbps) ? high - side mode suppression ratio (typ. 40db) ? high speed response (typ. 30psec) application 10gbps transmission system absolute maximum ratings symbol parameter conditions ratings unit i f forward current (laser diode) cw 150 ma v rl reverse voltage (laser diode) - 2 v v ea reverse voltage (modulator) - -3 v tc case temperature - +25 to +40 degc tstg storage temperature - -40 to +100 degc electrical/optical characteristics (tc=35degc) symbol parameter test conditions min. typ. max. unit ith threshold current cw, vmod=0v --- 15 30 ma iop operation current cw, po=6.5mw, vmod=0v --- 85 100 ma vop operating voltage cw, po=6.5mw, vmod=0v --- 1.6 1.8 v p peak wavelength cw, if=iop, vmod=0v 1530 --- 1565 nm // beam divergence angle (parallel) cw, po=6.5mw, vmod=0v --- 30 --- deg. ? beam divergence angle (perpendicular) cw, po=6.5mw, vmod=0v --- 42 --- deg. pm monitoring output power cw, po=6.5mw, vmod=0v --- 2.0 --- mw fc cut off frequency cw, if=iop, vmod=-1v 10 14 --- ghz tr,tf rise and fall time (20%-80%) --- --- 30 psec smsr side mode suppression ratio 35 40 --- db ex extinction ratio 9.95328gbps, nrz, prbs 2 23 -1 if=iop, vpp=2v, voffset=0 to -1.0v 10 --- --- db pp dispersion penalty ditto +1600ps/nm @ber=10-10 --- --- 2.0 db mitsubishi electric ma r . 20 0 6 notice: some parametric limits are subject to change .
mitsubishi laser diodes ml9xx41 series ingaasp dfb-laser diode with ea modulator mitsubishi electric ma r . 200 6 outline drawings 0.75 0.1 (0.225) 0.6 0.15 rear front 0.15 1.08 beam point 0.38 0.05 0.1 ~ 0.3 (1) (2) (3) (3) 0.75 0.1 (0.225) 0.6 0.15 rear front 0.15 1.08 beam point 0.38 0.05 0.1 ~ 0.3 (1) 1.08 beam point 0.38 0.05 0.1 ~ 0.3 (1) (2) (3) (3) ML9SM41 notice: some parametric limits are subject to change . *) the ld and eam cathode is contacted with the back side of the carrier. ML9SM41 (1) case eam ld (3) (2)
|
