? 2011 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c, r gs = 1m 1000 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c 10 a i dm t c = 25 c, pulse width limited by t jm 45 a i a t c = 25 c 7.5 a e as t c = 25 c 1.0 j dv/dt i s i dm , v dd v dss , t j 150 c 50 v/ns p d t c = 25 c 400 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c v isol 50/60 hz, 1 minute 2500 v f c mounting force 20..120/4.5..27 n/lb. weight 5 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 1000 v v gs(th) v ds = v gs , i d = 4ma 3.5 6.5 v i gss v gs = 30v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v 25 a t j = 125 c 1.5 ma r ds(on) v gs = 10v, i d = 7.5a, note 1 1.2 hiperfet tm power mosfet q3-class IXFR15N100Q3 v dss = 1000v i d25 = 10a r ds(on) 1.2 t rr 250ns ds100354(06/11) n-channel enhancement mode fast intrinsic rectifier features z silicon chip on direct-copper bond (dcb) substrate z isolated mounting surface z low intrinsic gate resistance z 2500v~ electrical isolation z fast intrinsic rectifier z avalanche rated z low package inductance advantages z high power density z easy to mount z space savings applications z dc-dc converters z battery chargers z switch-mode and resonant-mode power supplies z dc choppers z temperature and lighting controls advance technical information (electrically isolated tab) g = gate d = drain s = source isoplus247 e153432 g s d isolated tab
IXFR15N100Q3 ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 1 = gate 2,4 = drain 3 = source isoplus247 (ixfr) outline note 1. pulse test, t 300 s, duty cycle, d 2%. symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 7.5a, note 1 7.5 12.5 s c iss 3250 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 265 pf c rss 24 pf r gi gate input resistance 0.20 t d(on) 28 ns t r 10 ns t d(off) 30 ns t f 8 ns q g(on) 64 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 7.5a 23 nc q gd 27 nc r thjc 0.31 c/w r thcs 0.15 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 15 a i sm repetitive, pulse width limited by t jm 60 a v sd i f = i s , v gs = 0v, note 1 1.4 v t rr 250 ns i rm 7.6 a q rm 660 nc i f = 7.5a, -di/dt = 100a/ s v r = 100v, v gs = 0v resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 7.5a r g = 2 (external) advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2011 ixys corporation, all rights reserved IXFR15N100Q3 fig. 1. output characteristics @ t j = 25oc 0 2 4 6 8 10 12 14 0 2 4 6 8 10121416 v ds - volts i d - amperes v gs = 10v 7 v 6 v 8 v fig. 2. extended output characteristics @ t j = 25oc 0 4 8 12 16 20 24 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 9v 8 v 7 v fig. 3. output characteristics @ t j = 125oc 0 2 4 6 8 10 12 14 0 5 10 15 20 25 30 v ds - volts i d - amperes 5 v 6v v gs = 10v 7v fig. 4. r ds(on) normalized to i d = 7.5a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 15a i d = 7.5a fig. 5. r ds(on) normalized to i d = 7.5a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0246810121416182022 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
IXFR15N100Q3 ixys reserves the right to change limits, test conditions, and dimensions. fig. 7. input admittance 0 2 4 6 8 10 12 14 16 18 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 v gs - volts i d - amperes t j = 125oc - 40oc 25oc fig. 8. transconductance 0 5 10 15 20 25 02468101214161820 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 5 10 15 20 25 30 35 40 45 50 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 12 14 16 0 102030405060708090 q g - nanocoulombs v gs - volts v ds = 500v i d = 7.5a i g = 10ma fig. 11. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 0.1 1 10 100 10 100 1,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 100s r ds(on) limit 1ms 25s
? 2011 ixys corporation, all rights reserved ixys ref: f_15n100q3(q6) 6-28-11 IXFR15N100Q3 fig. 13. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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