si9802dy vishay siliconix document number: 70625 s-51303erev. a, 19-dec-96 www.vishay.com faxback 408-970-5600 1 dual n-channel reduced qg, fast switching mosfet v ds (v) r ds(on) ( ) i d (a) 20 0.055 @ v gs = 4.5 v 4.5 20 0.075 @ v gs = 3.0 v 3.8 s 1 d 1 g 1 d 1 s 2 d 2 g 2 d 2 so-8 5 6 7 8 top view 2 3 4 1 n-channel mosfet d 1 d 1 g 1 s 1 n-channel mosfet d 2 d 2 g 2 s 2
parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 12 v continuous drain current (t j = 150 c) a t a = 25 c i d 4.5 a continuous drain current (t j = 150 c) a t a = 70 c i d 3.6 a pulsed drain current (10 s pulse width) i dm 25 a continuous source current (diode conduction) a i s 1.7 maximum power dissipation a t a = 25 c p d 2 w maximum power dissipation a t a = 70 c p d 1.3 w operating junction and storage temperature range t j , t stg 55 to 150 c
parameter symbol limit unit maximum junction-to-ambient a r thja 62.5 c/w notes a. surface mounted on fr4 board, t 10 sec.
si9802dy vishay siliconix www.vishay.com faxback 408-970-5600 2 document number: 70625 s-51303erev. a, 19-dec-96
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