unisonic technologies co., ltd mmdt5401 preliminary dual transistor www.unisonic.com.tw 1 of 3 copyright ? 2012 unisonic technologies co., ltd qw-r218-021.b high voltage switching transistor ? description the utc 5401 is a high voltage fast-switching dual pnp transistor. it is characterized with high breakdown voltage, high current gain and high switching speed. ? features * high collector-emitter voltage: v ceo =-150v * high current gain ? equivalent circuit ? ordering information ordering number package packing lead free halogen free 1 2 3 4 5 6 mmdt5401l-al6-r MMDT5401G-AL6-R sot-363 e1 b1 c2 e2 b2 c1 tape reel ? marking
mmdt5401 preliminary dual transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r218-021.b ? absoluate maxium ratings (t a =25 c unless otherwise specified) parameter symbol ratings unit collector -base voltage v cbo -160 v collector -emitter voltage v ceo -150 v emitter -base voltage v ebo -5 v dc collector current i c -600 ma power dissipation p d 200 mw junction temperature t j +150 c storage temperature t stg -40 ~ +150 c note absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (ta= 25 , unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v cbo i c =-100 a, i e =0 -160 v collector-emitter breakdown voltage v ceo i c =-1ma, i b =0 -150 v emitter-base breakdown voltage v ebo i e =-10 a, i c =0 -5 v collector cut-off current i cbo v cb =-120v, i e =0 -50 na emitter cut-off current i ebo v be =-3v, i c =0 -50 na dc current gain(note) h fe v ce =-5v, i c =-1ma 80 v ce =-5v, i c =-10ma 80 160 400 v ce =-5v, i c =-50ma 80 collector-emitter satu ration voltage v ce(sat) i c =-10ma, i b =-1ma -0.2 v i c =-50ma, i b =-5ma -0.5 base-emitter satura tion voltage v be(sat) i c =-10ma, i b =-1ma -1 v i c =-50ma, i b =-5ma -1 current gain bandwidth product f t v ce =-10v, i c =-10ma, f=100mhz 100 300 mhz output capacitance c ob v cb =-10v, i e =0, f=1mhz 6.0 pf noise figure nf i c =-0.25ma, v ce =-5v r s =1k , f=10hz ~ 15.7khz 8 db note: pulse test: pw<300 s, duty cycle<2%
mmdt5401 preliminary dual transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r218-021.b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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