an amp company rf mosfet power transistor, iow, 28v 100 - 500 mhz uf281 op features l n-channel enhancement mode device l dmos structure l lower capacitances for broadband operation l common source configuration l lower noise floor l 100 mhz to 500 mhz operation absolute maximum ratings at 25c l 1 1% 1 246 077 .097 n 1 3.61 1 4.37 1 j42 1 .i72 electrical characteristics at 25c output capacitance reverse capacitance power gain drain efficiency load mismatch tolerance * per side c oss 5 pf v,,=28.0 v, i==1 .o mhz? 0, - 2.4 pf vds=28.0 v, f=l .o mhz? gp 10 - db v,,=28.0 v, i,,,=1 00.0 ma, po,,,=1 0.0 w, f=500 mhz 9d 50 - % v,,=28.0 v, i,,=1 00.0 ma, p,& 0.0 w, f=500 mhz vswr-t - 203 - v,,=28.0 v, ido= 00.0 ma, poe1 0.0 w, f=500 mhz pecifications subject to change without notice. north america: tel. (800) 366-2266 n asia/pacific: tel. +81 (03) 3226-1671 fax (800) 618-8883 fax +81 (03) 3226-1451 m/a-com, inc. m europe: tel. +44 (1344) 869 595 fax +44 (1344) 300 020
rf mosfet power transistor, iow, 28v uf281 op v2.00 typical device impedance frequency (mhz) 100 &., (ohms) z load (ohms) 30.0 - i 150.0 70.0 + i 110.0 300 15.0 - j 90.0 55.0 + j 80.0 500 4.2 - j 46.0 48.0 + j 50.0 v,,=28 v, l,=joo ma, p,,?lo.o watts z,, is the series equwalent input impedance of the device from gate to gate. z load is tbe optimum series equivalent load impedance as measured from drain to drain. rf test fixture p a r t s l i st cl0 27 pc c5 30 pf cl 6.8 pr ii36 15 pc 7, a 9 sqo pc cu. 12 13, 1% 17 .ofs uf us .louf cl6 soufsov. zl3 loo mr4 p5 v. uk mw 25 v. tt 2 3 250 5 so du swdigid coax l4 lo 7 turns 5 no. 22 avg vire l7, 9 1s turns 5 nj. 22 avg vm ue 35? of so ohn transnissidn ide l-3, 4 .7v 5 50 pe( t-w line ls,6 1~ofsoohnlransnissionlim 01 lf281op specifications subject to change without notice. mia-com, inc. north america: tel. (800) 366-2266 n asia/pacific: tel. +81 (03) 3226-1671 fax (800) 618-8883 fax +81 (03) 3226-1451 m europe: tel. +44 (1344) 869 595 fax +44 (1344) 300 020
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