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  dimensions in inches and (millimeters) version: a06 sfaf801g - sfaf808g isolated 8.0 amps. glass passivated super fast rectifiers ito-220ac .071(1.8) max .161(4.1) .146(3.7) .118(3.00) .124(3.16) .185(4.7) .173(4.4) .272(6.9) .248(6.3) .063(1.6) max .100(2.55) .543(13.8) .512(13.2) .100(2.55) .110(2.8) .098(2.5) .606(15.5) .583(14.8) .112(2.85) .100(2.55) .406(10.3) .390(9.90) .134(3.4)dia .113(3.0)dia .043(1.1) .020(0.5) .035(0.9) .055(1.4) .030(0.76) .020(0.50) 2 pin 1 pin 2 case positive case features  high efficiency, low vf  high current capability  high reliability  high surge current capability  low power loss.  for use in low volta g e, hi g h frequenc y inventor, free wheeling, and polarity protection application mechanical data  cases: ito-220ac molded plastic  epoxy: ul 94v-0 rate flame retardant  terminals: pure tin plated, lead free. solderable per mil-std-202, method 208 guaranteed  polarity: as marked  high temperature soldering guaranteed: 260 o c/10 seconds 0.25?,(6.35mm) from case.  weight: 2.24 grams  mounting torque: 5 in ? 1bs. max. maximum ratings and electrical characteristics rating at 25 o c ambient temperature unless otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20% type number symbol sfaf 801g sfaf 802g sfaf 803g sfaf 804g sfaf 805g sfaf 806g sfaf 807g sfaf 808g units maximum recurrent peak reverse voltage v rrm 50 100 150 200 300 400 500 600 v maximum rms voltage v rms 35 70 105 140 210 280 350 420 v maximum dc blocking voltage v dc 50 100 150 200 300 400 500 600 v maximum avera g e forward rectified current @t c = 100 o c i (av) 8.0 a peak forward sur g e current, 8.3 ms sin g le half sine-wave superimposed on rated load (jedec method ) i fsm 125 a maximum instantaneous forward voltage @ 8.0a v f 0.975 1.3 1.7 v maximum dc reverse current @t a =25 o c at rated dc blockin g volta g e @ t a =100 o c i r 10 400 ua ua maximum reverse recovery time (note 1) trr 35 ns typical junction capacitance (note 2) cj 90 60 pf typical thermal resistance (note 3) r jc 4.0 o c/w operating temperature range t j -65 to +150 o c storage temperature range t stg -65 to +150 o c notes: 1. reverse recovery test conditions: i f =0.5a, i r =1.0a, i rr =0.25a 2. measured at 1 mhz and applied reverse voltage of 4.0 v d.c. 3. mounted on heatsink size of 2? x 3? x 0.25 ? al-plate.. free datasheet http://
r a ting s an d characteristi c cu r ve s (s f af801 g thr u s f af808g) fig.6 - revers e recove r y tim e characteristi c an d tes t circui t diagram 50 noninductive non inductive oscilloscope (not e 1) pulse gener a t or (not e 2) dut (+) 50vdc (approx) (-) notes : 1 . ris e t ime=7n s max . inpu t impedance= 1 megoh m 22pf 2 . ris e t ime=10n s max . sours e impedance= 5 0 ohms (-) (+) 10 noninductive -1.0a -0.25a 0 +0.5a trr 1cm set time base for 5/ 10ns/ cm fig.1- maximum forward current derating curve average for ward current . (a) 0 50 100 150 0 2 4 6 8 10 case temperature. ( c) o fig.3- maximum non-repetitive forward surge current peak for ward surge current . (a) 1 2 5 10 20 100 50 150 120 90 60 30 0 number of cycles at 60hz tj=125 c 0 8.3ms single half sine wave jedec method fig.4- typical junction capacitance capacitance.(pf) 15 2 10 20 50 100 200 500 50 60 70 80 90 100 reverse voltage. (v) tj=25 c 0 sfaf801g~sf af804g sfaf805g~sf af808g 1000 40 fig.2- typical reverse characteristics instantaneous reverse current .( a) 0 20 40 60 80 100 120 140 1000 0.1 1 10 100 percent of rated peak reverse voltage. (%) tj=75 c 0 tj=100 c 0 tj=25 c 0 fig.5- typical forward characteristics instantaneous for ward current . (a) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.01 0.1 0.03 1 0.3 10 3 30 100 forward voltage. (v) tj=25 c pulse width=300 s 1% duty cycle o sfaf801g ~sf af804g sfaf805g~sff a806g sfaf807g~sf af808g version: a06 free datasheet http://


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Price & Availability of SFAF803G
DigiKey

Part # Manufacturer Description Price BuyNow  Qty.
SFAF803G
1801-SFAF803G-ND
Taiwan Semiconductor 35NS, 8A, 150V, SUPER FAST RECOV 1000: USD0.40632
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0
SFAF803GH
1801-SFAF803GH-ND
Taiwan Semiconductor 35NS, 8A, 150V, SUPER FAST RECOV 1000: USD0.40632
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0

Avnet Americas

Part # Manufacturer Description Price BuyNow  Qty.
SFAF803G
SFAF803G
Taiwan Semiconductor 35ns, 8A, 150V, Super Fast Recovery Rectifier - Rail/Tube (Alt: SFAF803G) 100000: USD0.35402
50000: USD0.35939
10000: USD0.36475
5000: USD0.37012
2100: USD0.37548
1100: USD0.38084
1000: USD0.39157
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0
SFAF803G C0
SFAF803G C0
Taiwan Semiconductor Diode Isolated Glass Passivated Super Fast Rectifier 150V 8A 2-Pin ITO-220AC Tube - Rail/Tube (Alt: SFAF803G C0) RFQ
0
SFAF803GH
SFAF803GH
Taiwan Semiconductor 35ns, 8A, 150V, Super Fast Recovery Rectifier - Rail/Tube (Alt: SFAF803GH) 100000: USD0.35402
50000: USD0.35939
10000: USD0.36475
5000: USD0.37012
2100: USD0.37548
1100: USD0.38084
1000: USD0.39157
BuyNow
0

Mouser Electronics

Part # Manufacturer Description Price BuyNow  Qty.
SFAF803G
821-SFAF803G
Taiwan Semiconductor Rectifiers 35ns, 8A, 150V, Super Fast Recovery Rectifier 1: USD0.89
10: USD0.731
100: USD0.568
500: USD0.482
1000: USD0.392
2500: USD0.369
5000: USD0.352
10000: USD0.335
RFQ
0
SFAF803GH
821-SFAF803GH
Taiwan Semiconductor Rectifiers 35ns, 8A, 150V, Super Fast Recovery Rectifier 1: USD0.89
10: USD0.731
100: USD0.568
500: USD0.482
1000: USD0.392
2500: USD0.369
5000: USD0.352
10000: USD0.335
RFQ
0

Future Electronics

Part # Manufacturer Description Price BuyNow  Qty.
SFAF803G
Taiwan Semiconductor 1000: USD0.413
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0

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