? 2006 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c 800 v v dgr t j = 25 c to 175 c; r gs = 1 m 800 v v gs continuous 30 v v gsm transient 40 v i d25 t c = 25 c14a i dm t c = 25 c, pulse width limited by t jm 40 a i ar t c = 25 c7a e ar t c = 25 c30mj e as t c = 25 c 500 mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 5 p d t c = 25 c 400 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 s 260 c m d mounting torque (to-247, to-3p) 1.13/10 nm/lb.in. weight plus220, plus220 smd 2 g to-268, to-3p 5.5 g to-247 6 g g = gate d = drain s = source tab = drain ds99593e(07/06) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 800 v v gs(th) v ds = v gs , i d = 4 ma 3.0 5.5 v i gss v gs = 30 v, v ds = 0 v 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c1ma r ds(on) v gs = 10 v, i d = 0.5 i d25 720 m pulse test, t 300 s, duty cycle d 2 % polarhv tm hiperfet power mosfet n-channel enhancement mode avalanche rated fast intrinsic diode features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density ixfh 14n80p ixfq 14n80p ixft 14n80p ixfv 14n80p ixfv 14n80ps v dss = 800 v i d25 = 14 a r ds(on) 720 m t rr 250 ms to-247 (ixfh) g s g s d plus220 (ixfv) d (tab) g s plus220smd (ixfv...s) d (tab) d (tab) d (tab) (tab) g s d to-3p (ixfq) to-268 (ixft) www..net
ixys reserves the right to change limits, test conditions, and dimensions. ixfh 14n80p ixfq 14n80p ixft 14n80p ixfv 14n80p ixfv 14n80ps symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 0.5 i d25 , pulse test 8 15 s c iss 3900 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 250 pf c rss 19 pf t d(on) 26 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = i d25 29 ns t d(off) r g = 5 (external) 62 ns t f 27 ns q g(on) 61 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 18 nc q gd 20 nc r thjc 0.31 c/w r thcs (to-247, to-3p) 0.21 c/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 14 a i sm repetitive 40 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25a, 250 ns q rm -di/dt = 100 a/ s 0.4 c i rm v r = 100v 5 a to-268 (ixft) outline plus220smd (ixfv_s) outline to-247 (ixfh) outline terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537
? 2006 ixys all rights reserved ixfh 14n80p ixfq 14n80p ixft 14n80p ixfv 14n80p ixfv 14n80ps fig. 1. output characteristics @ 25oc 0 2 4 6 8 10 12 14 0123456789101112 v ds - volts i d - amperes v gs = 10v 7v 6v 5v fig. 2. extended output characteristics @ 25oc 0 3 6 9 12 15 18 21 24 27 0 3 6 9 12 15 18 21 24 27 30 v ds - volts i d - amperes v gs = 10v 7v 5v 6v fig. 3. output characteristics @ 125oc 0 2 4 6 8 10 12 14 0 2 4 6 8 10 12 14 16 18 20 22 24 26 v ds - volts i d - amperes v gs = 10v 6v 5v fig. 4. r ds(on) normalized to i d = 7a value vs. junction temperature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 14a i d = 7a fig. 5. r ds(on) normalized to i d = 7a value vs. drain current 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 0 4 8 1216202428 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 2 4 6 8 10 12 14 16 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixfh 14n80p ixfq 14n80p ixft 14n80p ixfv 14n80p ixfv 14n80ps fig. 7. input admittance 0 2 4 6 8 10 12 14 16 18 20 3.5 4 4.5 5 5.5 6 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 3 6 9 12 15 18 21 24 27 30 02468101214161820 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode 0 5 10 15 20 25 30 35 40 45 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 102030405060 q g - nanocoulombs v gs - volts v ds =400v i d = 7a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss fig. 13. maximum transient thermal resistance 0.010 0.100 1.000 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds r (th)jc - oc / w ixys ref: f_14n80p (6j) 5-02-06.xls
? 2006 ixys all rights reserved plus220 (ixfv) outline to-3p-3l package outline ref: ixys co 0170 ra 1. gate 2. drain (collector) 3. source (emitter) 4. drain (collector) all metal area are tin plated. ixfh 14n80p ixfq 14n80p ixft 14n80p ixfv 14n80p ixfv 14n80ps
|
