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| type bsz16dn25ns3 g $(*' #$% tm 3 power-transistor features 9 / 2 * , * 7 & % ' . 0 % $ % $ $ . - 4 & 0 1 * . - 9 $ ) " - - & + - . 0 , " + + & 4 & + 9 6 $ & + + & - 2 ( " 2 & $ ) " 0 ( & 6 r ds(on) product (fom) 9 . 5 . - 0 & 1 * 1 2 " - $ & r ds(on) 9 8 . / & 0 " 2 * - ( 2 & , / & 0 " 2 3 0 & 9 # ' 0 & & + & " % / + " 2 * - ( . $ . , / + * " - 2 9 3 " + * ' * & % " $ $ . 0 % * - ( 2 . 1) for target application 9 " + . ( & - ' 0 & & " $ $ . 0 % * - ( 2 . maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25 c 10.9 a t c =100 c 7.7 pulsed drain current 2) i d,pulse t c =25 c 44 avalanche energy, single pulse e as i d =5.5 a, r gs =25 # 120 mj gate source voltage v gs 20 v power dissipation p tot t c =25 c 62.5 w operating and storage temperature t j , t stg -55 ... 150 c iec climatic category; din iec 68-1 55/150/56 value 1) j-std20 and jesd22 2) see figure 3 v ds 250 v r ds(on),max 165 m # i d 10.9 a product summary type package marking bsz16dn25ns3 g pg-tsdson-8 16dn25n pg-tsdson-8 rev. 2.1 page 1 2010-09-01 bsz16dn25ns3 g parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 2 k/w r thja 6 cm 2 cooling area 3) - - 60 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =1 ma 250 - - v gate threshold voltage v gs(th) v ds = v gs , i d =32 a 2 3 4 zero gate voltage drain current i dss v ds =200 v, v gs =0 v, t j =25 c - 0.1 1 a v ds =200 v, v gs =0 v, t j =125 c - 10 100 gate-source leakage current i gss v gs =20 v, v ds =0 v - 1 100 na drain-source on-state resistance r ds(on) v gs =10 v, i d =5.5 a - 146 165 m # gate resistance r g - 2.1 - # transconductance g fs | v ds |>2| i d | r ds(on)max , i d =5.5 a 7 14 - s values 3) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. thermal resistance, junction - ambient rev. 2.1 page 2 2010-09-01 bsz16dn25ns3 g parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 690 920 pf output capacitance c oss - 44 59 reverse transfer capacitance c rss - 5.2 - turn-on delay time t d(on) - 6 - ns rise time t r - 4 - turn-off delay time t d(off) - 11 - fall time t f - 4 - gate charge characteristics 4) gate to source charge q gs - 3.0 - nc gate to drain charge q gd - 1.2 - switching charge q sw - 2.1 - gate charge total q g - 8.6 11.4 gate plateau voltage v plateau - 4.3 - v output charge q oss v dd =100 v, v gs =0 v - 16 22 nc reverse diode diode continous forward current i s - - 10.9 a diode pulse current i s,pulse - - 44 diode forward voltage v sd v gs =0 v, i f =10.9 a, t j =25 c - 0.9 1.2 v reverse recovery time t rr - 103 - ns reverse recovery charge q rr - 337 - nc 4) see figure 16 for gate charge parameter definition v r =100 v, i f = i s , d i f /d t =100 a/s t c =25 c values v gs =0 v, v ds =100 v, f =1 mhz v dd =100 v, v gs =10 v, i d =5.5 a, r g =1.6 # v dd =99 v, i d =5.5 a, v gs =0 to 10 v rev. 2.1 page 3 2010-09-01 bsz16dn25ns3 g 1 power dissipation 2 drain current p tot =f( t c ) i d =f( t c ); v gs : ! 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t c =25 c; d =0 z thjc =f( t p ) parameter: t p parameter: d = t p / t single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -1 10 0 10 1 z t h j c [ k / w ] t p [s] 0 10 20 30 40 50 60 70 0 40 80 120 160 p t o t [ w ] t c [ & c] 0 2 4 6 8 10 12 0 40 80 120 160 i d [ a ] t c [ & c] 1 s 10 s 100 s 1 ms 10 ms dc 10 -1 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 i d [ a ] v ds [v] rev. 2.1 page 4 2010-09-01 bsz16dn25ns3 g 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j 5 v 5.5 v 6 v 8 v 10 v 0 40 80 120 160 200 240 0 4 8 12 16 r d s ( o n ) [ m ] i d [a] 25 c 150 c 0 5 10 15 20 25 0 2 4 6 8 i d [ a ] v gs [v] 0 4 8 12 16 20 24 0 4 8 12 16 g f s [ s ] i d [a] 4.5 v 5 v 5.5 v 6 v 7 v 10 v 0 5 10 15 20 25 0 1 2 3 4 5 i d [ a ] v ds [v] rev. 2.1 page 5 2010-09-01 bsz16dn25ns3 g 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =5.5 a; v gs =10 v v gs(th) =f( t j ); v gs = v ds parameter: i d 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ 98 % 0 50 100 150 200 250 300 350 400 450 -60 -20 20 60 100 140 180 r d s ( o n ) [ m ] t j [ & c] 32 a 320 a 0 0.5 1 1.5 2 2.5 3 3.5 4 -60 -20 20 60 100 140 180 v g s ( t h ) [ v ] t j [ & c] ciss coss crss 10 0 10 1 10 2 10 3 0 40 80 120 160 200 c [ p f ] v ds [v] 25 c 150 c 25 c, 98% 150 c, 98% 0.1 1 10 100 0 0.5 1 1.5 2 i f [ a ] v sd [v] rev. 2.1 page 6 2010-09-01 bsz16dn25ns3 g 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 # v gs =f( q gate ); i d =5.5 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =1 ma 50 v 125 v 200 v 0 2 4 6 8 10 0 1 2 3 4 5 6 7 8 9 10 v g s [ v ] q gate [nc] 230 240 250 260 270 280 -60 -20 20 60 100 140 180 v b r ( d s s ) [ v ] t j [ & c] bsz16dn25ns3 g package outline:pg-tsdson-8 rev. 2.1 page 8 2010-09-01 bsz16dn25ns3 g ' $ ( , % - 0 + 2 ( - , & ( 4 $ , ( , 2 ' ( 1 # - " 3 + $ , 2 1 ' * * ( , , - $ 4 $ , 2 ! $ 0 $ & 0 # $ # 1 & 3 0 , 2 $ $ - % " - , # ( 2 ( - , 1 - 0 " ' 0 " 2 $ 0 ( 1 2 ( " 1 ( 2 ' 0 $ 1 . $ " 2 2 - , 7 $ 6 + . * $ 1 - 0 ' ( , 2 1 & ( 4 $ , ' $ 0 $ ( , , 7 2 7 . ( " * 4 * 3 $ 1 1 2 2 $ # ' $ 0 $ ( , , # - 0 , 7 ( , % - 0 + 2 ( - , 0 $ & 0 # ( , & 2 ' $ . . * ( " 2 ( - , - % 2 ' $ # $ 4 ( " $ , % ( , $ - , $ " ' , - * - & ( $ 1 ' $ 0 $ ! 7 # ( 1 " * ( + 1 , 7 , # * * 5 0 0 , 2 ( $ 1 , # * ( ! ( * ( 2 ( $ 1 - % , 7 ) ( , # ( , " * 3 # ( , & 5 ( 2 ' - 3 2 * ( + ( 2 2 ( - , 5 0 0 , 2 ( $ 1 - % , - , ( , % 0 ( , & $ + $ , 2 - % ( , 2 $ * * $ " 2 3 * . 0 - . $ 0 2 7 0 ( & ' 2 1 - % , 7 2 ' ( 0 # . 0 2 7 - 0 % 3 0 2 ' $ 0 ( , % - 0 + 2 ( - , - , 2 $ " ' , - * - & 7 # $ * ( 4 $ 0 7 2 $ 0 + 1 , # " - , # ( 2 ( - , 1 , # . 0 ( " $ 1 . * $ 1 $ " - , 2 " 2 2 ' $ , $ 0 $ 1 2 , % ( , $ - , $ " ' , - * - & ( $ 1 % % ( " $ 5 5 5 ( , % ( , $ - , " - + ' 3 $ 2 - 2 $ " ' , ( " * 0 $ / 3 ( 0 $ + $ , 2 1 " - + . - , $ , 2 1 + 7 " - , 2 ( , # , & $ 0 - 3 1 1 3 ! 1 2 , " $ 1 - 0 ( , % - 0 + 2 ( - , - , 2 ' $ 2 7 . $ 1 ( , / 3 $ 1 2 ( - , . * $ 1 $ " - , 2 " 2 2 ' $ , $ 0 $ 1 2 , % ( , $ - , $ " ' , - * - & ( $ 1 % % ( " $ , % ( , $ - , $ " ' , - * - & ( $ 1 " - + . - , $ , 2 1 + 7 ! $ 3 1 $ # ( , * ( % $ 1 3 . . - 0 2 # $ 4 ( " $ 1 - 0 1 7 1 2 $ + 1 - , * 7 5 ( 2 ' 2 ' $ $ 6 . 0 $ 1 1 5 0 ( 2 2 $ , . . 0 - 4 * - % , % ( , $ - , $ " ' , - * - & ( $ 1 ( % % ( * 3 0 $ - % 1 3 " ' " - + . - , $ , 2 1 " , 0 $ 1 - , ! * 7 ! $ $ 6 . $ " 2 $ # 2 - " 3 1 $ 2 ' $ % ( * 3 0 $ - % 2 ' 2 * ( % $ 1 3 . . - 0 2 # $ 4 ( " $ - 0 1 7 1 2 $ + - 0 2 - % % $ " 2 2 ' $ 1 % $ 2 7 - 0 $ % % $ " 2 ( 4 $ , $ 1 1 - % 2 ' 2 # $ 4 ( " $ - 0 1 7 1 2 $ + ( % $ 1 3 . . - 0 2 # $ 4 ( " $ 1 - 0 1 7 1 2 $ + 1 0 $ ( , 2 $ , # $ # 2 - ! $ ( + . * , 2 $ # ( , 2 ' $ ' 3 + , ! - # 7 - 0 2 - 1 3 . . - 0 2 , # - 0 + ( , 2 ( , , # 1 3 1 2 ( , rev. 2.1 page 9 2010-09-01 |
Price & Availability of BSZ16DN25NS3G
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