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| s o t 6 6 6 NX3020NAKV 30 v, 200 ma dual n-channel trench mosfet 29 october 2013 product data sheet scan or click this qr code to view the latest information for this product 1. general description dual n-channel enhancement mode field-effect transistor (fet) in a ultra small and flat lead sot666 surface-mounted device (smd) plastic package using trench mosfet technology. 2. features and benefits ? very fast switching ? trench mosfet technology ? esd protection ? low threshold voltage 3. applications ? relay driver ? high-speed line driver ? low-side loadswitch ? switching circuits 4. quick reference data table 1. quick reference data symbol parameter conditions min typ max unit per transistor v ds drain-source voltage - - 30 v v gs gate-source voltage t j = 25 c -20 - 20 v i d drain current v gs = 4.5 v; t amb = 25 c [1] - - 200 ma static characteristics (per transistor) r dson drain-source on-state resistance v gs = 10 v; i d = 100 ma; t j = 25 c - 2.7 4.5 [1] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated, mounting pad for drain 1 cm 2 .
nxp semiconductors NX3020NAKV 30 v, 200 ma dual n-channel trench mosfet NX3020NAKV all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2013. all rights reserved product data sheet 29 october 2013 2 / 14 5. pinning information table 2. pinning information pin symbol description simplified outline graphic symbol 1 s1 source tr1 2 g1 gate tr1 3 d2 drain tr2 4 s2 source tr2 5 g2 gate tr2 6 d1 drain tr1 1 2 3 4 5 6 sot666 017aaa256 d 1 s 1 g 1 d 2 s 2 g 2 6. ordering information table 3. ordering information package type number name description version NX3020NAKV sot666 plastic surface-mounted package; 6 leads sot666 7. marking table 4. marking codes type number marking code NX3020NAKV gb 8. limiting values table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit per transistor v ds drain-source voltage - 30 v v gs gate-source voltage t j = 25 c -20 20 v v gs = 4.5 v; t amb = 25 c [1] - 200 ma i d drain current v gs = 4.5 v; t amb = 100 c [1] - 120 ma i dm peak drain current t amb = 25 c; single pulse; t p 10 s - 800 ma [2] - 260 mw t amb = 25 c [1] - 370 mw p tot total power dissipation t sp = 25 c - 1100 mw nxp semiconductors NX3020NAKV 30 v, 200 ma dual n-channel trench mosfet NX3020NAKV all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2013. all rights reserved product data sheet 29 october 2013 3 / 14 symbol parameter conditions min max unit source-drain diode i s source current t amb = 25 c - 200 ma per device p tot total power dissipation t amb = 25 c [2] - 375 mw t j junction temperature -55 150 c t amb ambient temperature -55 150 c t stg storage temperature -65 150 c [1] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated, mounting pad for drain 1 cm 2 . [2] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated and standard footprint. t a m b ( c ) - 7 5 1 7 5 1 2 5 2 5 7 5 - 2 5 0 1 7 a a a 0 0 1 4 0 8 0 1 2 0 p d e r ( % ) 0 fig. 1. normalized total power dissipation as a function of ambient temperature t a m b ( c ) - 7 5 1 7 5 1 2 5 2 5 7 5 - 2 5 0 1 7 a a a 0 0 2 4 0 8 0 1 2 0 i d e r ( % ) 0 fig. 2. normalized continuous drain current as a function of ambient temperature nxp semiconductors NX3020NAKV 30 v, 200 ma dual n-channel trench mosfet NX3020NAKV all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2013. all rights reserved product data sheet 29 october 2013 4 / 14 017aaa676 v d s (v) 1 0 - 1 1 0 2 1 0 1 1 0 - 1 1 0 - 2 1 i d (a) 1 0 - 3 t p = 1 ms t p = 10 ms t p = 100 ms dc; t s p = 25 c dc; t amb = 25 c; drain mounting pad 1 cm 2 limit r dson = v d s / i d i dm = single pulse fig. 3. safe operating area; junction to ambient; continuous and peak drain currents as a function of drain- source voltage 9. thermal characteristics table 6. thermal characteristics symbol parameter conditions min typ max unit per transistor [1] - 410 480 k/w r th(j-a) thermal resistance from junction to ambient in free air [2] - 290 340 k/w r th(j-sp) thermal resistance from junction to solder point - - 105 k/w [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for drain 1 cm 2 . nxp semiconductors NX3020NAKV 30 v, 200 ma dual n-channel trench mosfet NX3020NAKV all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2013. all rights reserved product data sheet 29 october 2013 5 / 14 017aaa677 t p (s) 1 0 - 3 1 0 2 1 0 3 1 0 1 1 0 - 2 1 0 - 1 1 0 2 1 0 3 zth(j-a) (k/w) 1 0 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 0.05 0.02 0.01 0 fr4 pcb, standard footprint fig. 4. transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa678 t p (s) 1 0 - 3 1 0 2 1 0 3 1 0 1 1 0 - 2 1 0 - 1 1 0 2 1 0 3 z th(j-a) (k/w) 1 0 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 0.05 0 0.02 0.01 fr4 pcb, mounting pad for drain 1 cm 2 fig. 5. transient thermal impedance from junction to ambient as a function of pulse duration; typical values 10. characteristics table 7. characteristics symbol parameter conditions min typ max unit static characteristics (per transistor) v (br)dss drain-source breakdown voltage i d = 250 a; v gs = 0 v; t j = 25 c 30 - - v v gsth gate-source threshold voltage i d = 250 a; v ds = v gs ; t j = 25 c 0.8 1.2 1.5 v v ds = 30 v; v gs = 0 v; t j = 25 c - - 1 a i dss drain leakage current v ds = 30 v; v gs = 0 v; t j = 150 c - - 10 a nxp semiconductors NX3020NAKV 30 v, 200 ma dual n-channel trench mosfet NX3020NAKV all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2013. all rights reserved product data sheet 29 october 2013 6 / 14 symbol parameter conditions min typ max unit v gs = 20 v; v ds = 0 v; t j = 25 c - - 3.5 a v gs = -20 v; v ds = 0 v; t j = 25 c - - 3.5 a v gs = 10 v; v ds = 0 v; t j = 25 c - - 1 a v gs = -10 v; v ds = 0 v; t j = 25 c - - 1 a v gs = 4.5 v; v ds = 0 v; t j = 25 c - - 0.5 a i gss gate leakage current v gs = -4.5 v; v ds = 0 v; t j = 25 c - - 0.5 a v gs = 10 v; i d = 100 ma; t j = 25 c - 2.7 4.5 v gs = 10 v; i d = 100 ma; t j = 150 c - 5.5 9.2 v gs = 4.5 v; i d = 100 ma; t j = 25 c - 3 5.2 r dson drain-source on-state resistance v gs = 2.5 v; i d = 10 ma; t j = 25 c - 4 13 g fs forward transconductance v ds = 10 v; i d = 150 ma; t j = 25 c - 320 - ms dynamic characteristics (per transistor) q g(tot) total gate charge - 0.34 0.44 nc q gs gate-source charge - 0.11 - nc q gd gate-drain charge v ds = 15 v; i d = 150 ma; v gs = 4.5 v; t j = 25 c - 0.06 - nc c iss input capacitance - 13 20 pf c oss output capacitance - 2.6 - pf c rss reverse transfer capacitance v ds = 10 v; f = 1 mhz; v gs = 0 v; t j = 25 c - 1.1 - pf t d(on) turn-on delay time - 5 10 ns t r rise time - 5 - ns t d(off) turn-off delay time - 34 68 ns t f fall time v ds = 20 v; r l = 250 ; v gs = 10 v; r g(ext) = 6 ; t j = 25 c - 17 - ns source-drain diode (per transistor) v sd source-drain voltage i s = 115 ma; v gs = 0 v; t j = 25 c 0.47 0.7 1.2 v nxp semiconductors NX3020NAKV 30 v, 200 ma dual n-channel trench mosfet NX3020NAKV all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2013. all rights reserved product data sheet 29 october 2013 7 / 14 v d s (v) 0 4 3 1 2 017aaa663 0.2 0.3 0.1 0.4 0.5 i d (a) 0 1 0 v 4 . 5 v 3 . 5 v v g s = 2 v 2 . 5 v 3 v t j = 25 c fig. 6. output characteristics: drain current as a function of drain-source voltage; typical values 017aaa664 1 0 - 4 1 0 - 5 1 0 - 3 i d (a) 1 0 - 6 v g s (v) 0 2.0 1.5 0.5 1.0 m i n t y p m a x t j = 25 c; v ds = 5 v fig. 7. sub-threshold drain current as a function of gate-source voltage i d (a) 0 0.5 0.4 0.2 0.3 0.1 017aaa665 4 6 2 8 1 0 r dson () 0 2 v 2 . 5 v 3 v 3 . 5 v 4 . 5 v v g s = 1 0 v t j = 25 c fig. 8. drain-source on-state resistance as a function of drain current; typical values v g s (v) 0 1 0 8 4 6 2 017aaa666 4 8 1 2 r dson () 0 t j = 1 5 0 c t j = 2 5 c i d = 0.15 a fig. 9. drain-source on-state resistance as a function of gate-source voltage; typical values nxp semiconductors NX3020NAKV 30 v, 200 ma dual n-channel trench mosfet NX3020NAKV all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2013. all rights reserved product data sheet 29 october 2013 8 / 14 v g s (v) 0 4 3 1 2 017aaa667 0.2 0.1 0.3 0.4 i d (a) 0 t j = 1 5 0 c t j = 2 5 c v ds > i d r dson fig. 10. transfer characteristics: drain current as a function of gate-source voltage; typical values t j (c) -60 180 120 0 6 0 017aaa668 1.0 1.5 0.5 2.0 2.5 a 0 fig. 11. normalized drain-source on-state resistance as a function of junction temperature; typical values t j (c) -60 180 120 0 6 0 017aaa669 1.0 0.5 1.5 2.0 v gs(th) (v) 0 m a x t y p m i n i d = 0.25 ma; v ds = v gs fig. 12. gate-source threshold voltage as a function of junction temperature v d s (v) 1 0 - 1 1 0 2 1 0 1 017aaa670 1 0 1 1 0 2 c (pf) 1 0 - 1 c iss c oss c rss f = 1 mhz; v gs = 0 v fig. 13. input, output and reverse transfer capacitances as a function of drain-source voltage; typical values nxp semiconductors NX3020NAKV 30 v, 200 ma dual n-channel trench mosfet NX3020NAKV all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2013. all rights reserved product data sheet 29 october 2013 9 / 14 q g (nc) 0 0.8 0.6 0.2 0.4 017aaa671 4 6 2 8 1 0 v g s (v) 0 i d = 0.15 a; v ds = 15 v; t amb = 25 c fig. 14. gate-source voltage as a function of gate charge; typical values 0 1 7 a a a 1 3 7 v g s v g s ( t h ) q g s 1 q g s 2 q g d v d s q g ( t o t ) i d q g s v g s ( p l ) fig. 15. gate charge waveform definitions 017aaa672 v s d (v) 0 1.2 0.8 0.4 0.2 0.3 0.1 0.4 0.5 i s (a) 0 t j = 1 5 0 c t j = 2 5 c v gs = 0 v fig. 16. source current as a function of source-drain voltage; typical values 11. test information t 1 t 2 p t 0 0 6 a a a 8 1 2 d u t y c y c l e = t 1 t 2 fig. 17. duty cycle definition nxp semiconductors NX3020NAKV 30 v, 200 ma dual n-channel trench mosfet NX3020NAKV all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2013. all rights reserved product data sheet 29 october 2013 10 / 14 12. package outline d i m e n s i o n s i n m m 0 4 - 1 1 - 0 8 1 . 7 1 . 5 1 . 7 1 . 5 1 . 3 1 . 1 1 0 . 1 8 0 . 0 8 0 . 2 7 0 . 1 7 0 . 5 p i n 1 i n d e x 1 2 3 4 5 6 0 . 6 0 . 5 0 . 3 0 . 1 fig. 18. package outline sot666 13. soldering s o l d e r l a n d s p l a c e m e n t a r e a o c c u p i e d a r e a s o l d e r p a s t e s o t 6 6 6 _ f r 2 . 7 5 2 . 4 5 2 . 1 1 . 6 0 . 4 ( 6 ) 0 . 5 5 ( 2 ) 0 . 2 5 ( 2 ) 0 . 6 ( 2 ) 0 . 6 5 ( 2 ) 0 . 3 ( 2 ) 0 . 3 2 5 ( 4 ) 0 . 4 5 ( 4 ) 0 . 5 ( 4 ) 0 . 3 7 5 ( 4 ) 1 . 7 2 1 . 7 1 . 0 7 5 0 . 5 3 8 d i m e n s i o n s i n m m fig. 19. reflow soldering footprint for sot666 nxp semiconductors NX3020NAKV 30 v, 200 ma dual n-channel trench mosfet NX3020NAKV all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2013. all rights reserved product data sheet 29 october 2013 11 / 14 14. revision history table 8. revision history data sheet id release date data sheet status change notice supersedes NX3020NAKV v.2 20131029 product data sheet - NX3020NAKV v.1 modifications: ? 3d package outline added ? table 7 values of capacitance parameters corrected ? figure 13 corrected NX3020NAKV v.1 20120706 product data sheet - - nxp semiconductors NX3020NAKV 30 v, 200 ma dual n-channel trench mosfet NX3020NAKV all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2013. all rights reserved product data sheet 29 october 2013 12 / 14 15. legal information 15.1 data sheet status document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objective specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification. [1] please consult the most recently issued document before initiating or completing a design. [2] the term 'short data sheet' is explained in section "definitions". [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. the latest product status information is available on the internet at url http://www.nxp.com . 15.2 definitions preview the document is a preview version only. the document is still subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer, unless nxp semiconductors and customer have explicitly agreed otherwise in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 15.3 disclaimers limited warranty and liability information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. nxp semiconductors takes no responsibility for the content in this document if provided by an information source outside of nxp semiconductors. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use in automotive applications this nxp semiconductors product has been qualified for use in automotive applications. unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors and its suppliers accept no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. quick reference data the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customers sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customers applications and products planned, as well as for the planned application and use of customers third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customers applications or products, or the application or use by customers third party customer(s). customer is responsible for doing all necessary testing for the customers applications and products using nxp semiconductors products in order to avoid a default of the applications and the products or of the application or use by customers third party customer(s). nxp does not accept any liability in this respect. limiting values stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customers general terms and conditions with regard to the purchase of nxp semiconductors products by customer. nxp semiconductors NX3020NAKV 30 v, 200 ma dual n-channel trench mosfet NX3020NAKV all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2013. all rights reserved product data sheet 29 october 2013 13 / 14 no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. export control this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from competent authorities. translations a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 15.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. adelante , bitport , bitsound , coolflux , coreuse , desfire , ez-hv , fabkey , greenchip , hipersmart , hitag , i2c-bus logo, icode , i-code , itec , labelution , mifare , mifare plus , mifare ultralight , moreuse , qlpak , silicon tuner , siliconmax , smartxa , starplug , topfet , trenchmos , trimedia and ucode are trademarks of nxp b.v. hd radio and hd radio logo are trademarks of ibiquity digital corporation. nxp semiconductors NX3020NAKV 30 v, 200 ma dual n-channel trench mosfet NX3020NAKV all information provided in this document is subject to legal disclaimers. ? nxp n.v. 2013. all rights reserved product data sheet 29 october 2013 14 / 14 16. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 features and benefits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 quick reference data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 5 pinning information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 7 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 8 limiting values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 9 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 10 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 11 test information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 12 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 13 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 14 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 15 legal information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 15.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 15.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 15.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 15.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 ? nxp n.v. 2013. all rights reserved for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 29 october 2013 |
Price & Availability of NX3020NAKV
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