zptoauets., unc. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon planar pnp telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 BFX90 bfx91 high-voltage amplifiers the bfx 90 and bfx 91 are silicon planar epitaxial pnp transistors in jedec to-18 (bfx 90) and jedec to-39 (bfx 91) metal cases. both devices feature high voltage, high gain, low noise and excellent current gain linearity from 10 ^a to 50 ma. absolute maximum ratings vcbo vceo vebo "c plot t^.tj collector-base voltage (le =0) collector-emitter voltage (ib =0) emitter-base voltage (lc = 0) collector current total power dissipation at tarnb < 25 c for bfx 90 for bfx 91 at tease < 25 c for bfx 90 for bfx 91 storage and junction temperature -180 -180 -6 -100 0.4 0.7 1.4 2.5 -55 to 200 v v v ma w w w w c mechanical data dimensions in mm collector connected to case collector connected to case -]'; h (sim. to to-18) (sim. to to-39) nj semi-conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information famished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets arc current before placing orders. quality semi-conductors
thermal data rth i-case thermal resistance junction-case rth j-amb thermal resistance junction-ambient max max BFX90 125 c/w 438 c/w bfx 91 70c/w 250 c/w electrical characteristics (tamb = 25c unless otherwise specified) parameter icbo collector cutoff current (ie = 0) iebo emitter cutoff current (lc = 0) vibrjcbo collector-base breakdown voltage (ie=0) vceo(5us) collector-emitter sustaining voltage (ib=0) vibriebo emitter-base breakdown voltage (lc=0) vce(sat)* collector-emitter saturation voltage vbe(sat)* base-emitter saturation voltage hpe dc current gain * # hfe small signal current gain ft transition frequency test conditions vcb= -100v vcb=-100v tamb=125c veb= -4v lc = -10;ua lc = -2 ma ie =-10 ma lc=-10ma ib = -1ma lc = -10 ma ib = -1 ma ic=-10ma vce=-10v lc =-1 ma vce=-10v lc=-10ma vce=~10v lc =-10 jua vce= -10v tan,b= -55c lc =-100jua vce=-10v tamb=-55c lc =-1 ma vce= -10v f =1 khz lc = -1 ma vce= -10v f =20 mhz min. typ. max. -0.2 -10 -0.03 -10 -0.2 -10 -180 -180 -6 -0.1 -0.25 -0.74 -0.9 60 110 80 170 80 200 300 15 60 30 90 100 400 40 60 160 unit na ala na v v v v v - _ mhz electrical characteristics (continued) parameter cebo emitter-base capacitance ccbo collector-base capacitance imf noise figure h|e input impedance hoe output admittance test conditions |c = 0 veb= -0.5v f = 1 mhz ie=0 vcb=-5v f =1 mhz ic=-10ma vce=-5v rg= 10 kn f =10 khz b = 2khz f = 1 khz b = 200 hz f =100 hz b=20hz je = ?v? vce=-10v lc--1ma vce=-10v f = 1 khz min. typ. max. 20 25 5 7 1 3 1 3 2 10 2.5 12 5 25 unit pf pf db db db kn pis'
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