mbrs520g mbrs530g MBRS540G 2 0 3 0 4 0 1 4 2 1 2 8 2 0 3 0 4 0 - 5 5 t o + 1 2 5 s y m b o l s v r r m ( v ) v r m s v r ( v ) ( v ) * 1 * 2 * 3 * 1 r e p e t i t i v e p e a k r e v e r s e v o l t a g e * 2 r m s v o l t a g e * 3 c o n t i n u o u s r e v e r s e v o l t a g e * 4 m a x i m u m f o r w a r d v o l t a g e @ i = 5 . 0 a f v f ( v ) * 4 mbrs550g mbrs560g 5 0 6 0 3 5 4 2 5 0 6 0 0 . 7 5 0 . 5 5 - 5 5 t o + 1 5 0 0 . 8 5 mbrs580g mbrs5100g 8 0 1 0 0 5 6 7 0 8 0 1 0 0 o ( c ) o p e r a t i n g t e m p e r a t u r e t , j p a r a m e t e r c o n d i t i o n s f o r w a r d r e c t i f i e d c u r r e n t f o r w a r d s u r g e c u r r e n t r e v e r s e c u r r e n t t h e r m a l r e s i s t a n c e d i o d e j u n c t i o n c a p a c i t a n c e s t o r a g e t e m p e r a t u r e s e e f i g . 1 8 . 3 m s s i n g l e h a l f s i n e - w a v e s u p e r i m p o s e d o n r a t e l o a d ( j e d e c m e t h o d e ) f = 1 m h z a n d a p p l i e d 4 v d c r e v e r s e v o l t a g e s y m b o l m i n . t y p . m a x . u n i t i o i f s m i r r j a c j t s t g a a m a o c / w o c p f 5 . 0 1 5 0 0 . 5 + 1 7 5 - 6 5 3 6 o v = v t = 2 5 c r r r m j o v = v t = 1 0 0 c r r r m j j u n c t i o n t o a m b i e n t 3 8 0 2 0 r j c o c / w 1 6 j u n c t i o n t o c a s e o v = v t = 2 5 c r r r m j o v = v t = 1 0 0 c r r r m j f m 5 2 0 ~ f m 5 4 0 f m 5 5 0 ~ f m 5 2 0 0 0 . 2 1 0 mbrs5150g mbrs5200g 1 5 0 1 0 5 1 5 0 2 0 0 1 4 0 2 0 0 0 . 9 0 0 . 9 2 mbrs520g thru mbrs5200g chip schottky barrier rectifier 5.0a surface mount schottky barrier rectifiers -20v-200v features batch process design, excellent power dissipation offers ? better reverse leakage current and thermal resistance. low profile surface mounted application in order to optimize board space. ? ? low power loss, high efficiency. ? high current capability, low forward voltage drop. ? high surge capability. ? guardring for overvoltage protection. ? ultra high-speed switching. ? silicon epitaxial planar chip, metal silicon junction. ? lead-free parts meet environmental standards of mil-std-19500/228 ? suffix "-h" indicates halogen free parts, ex. mbrs520g-h. mechanical data ? epoxy: ul94-v0 rated frame retardant ? case: molded plastic, do-214ab / smc ? terminals: solder plated, solderable per mil-std-750, method 2026 ? polarity: lndicated by cathode band ? mounting position: any ? weight: approximated 0.19 gram maximum ratings (at t =25 a o c unless otherwise noted) page 1/2 @ 2010 copyright by american first semiconductor 0 . 2 7 2 ( 6 . 9 ) 0 . 2 4 8 ( 6 . 3 ) 0 . 0 1 2 ( 0 . 3 ) ty p . 0 . 1 8 9 ( 4 . 8 ) 0 . 1 6 5 ( 4 . 2 ) 0 . 0 9 8 ( 2 . 5 ) 0 . 0 7 5 ( 1 . 9 ) 0 . 0 4 8 ( 1 . 2 ) ty p . 0 . 0 4 8 ( 1 . 2 ) ty p . smc package outline dimensions in inches and (millimeters)
0.1 1.0 .01 10 50 fig.1-typical for w ard current dera ting cur ve a verage for w ard current ,(a) inst ant aneous for w ard current ,(a) for w ard vol t age,(v) pulse width 300us 1% duty cycle 1.0 2.0 3.0 4.0 5.0 6.0 .1 .3 .5 .7 .9 1.1 1.3 1.5 3.0 .1 1.0 10 100 fig.5 - typical reverse characteristics reverse leakage current , (ma) 0 20 40 60 80 100 120 140 .01 t =75 c j mbrs520g~MBRS540G mbrs550g~mbrs5200g t =25 c j t =25 c j lead tempera ture,( c) 0 0 20 40 60 80 100 120 140 160 180 200 fig.2-typical for w ard characteristics percent of ra ted peak reverse vol t age,(%) fig.4-typical junction cap acit ance reverse vol t age,(v) junction cap acit ance,(pf) 1000 1200 1400 800 600 400 200 0 .01 .05 .1 .5 1 5 10 50 100 fig.3-maximum non-repetitive for w ard surge current 100 50 0 150 250 200 number of cycles a t 60hz 1 10 5 50 100 t =25 c j 8.3ms single half sine w ave jedec method peak for w ard surge current ,(a) mbrs520g thru mbrs5200g rating and characteristic curves page 2/2 www.first-semi.com mbrs520g~MBRS540G mbrs550g~mbrs560g mbrs580g~mbrs5100g mbrs5150g~mbrs5200g
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