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  savantic semiconductor product specification silicon npn power transistors BUX37 description with to-3 package high breakdown voltage darlington applications power switching automotive ignition solenoid drivers series and shunt regulators. pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta=25  ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 400 v v ebo emitter-base voltage open collector 7 v i c collector current 15 a i b base current 4 a p t total power dissipation t c 1 100 35 w t j junction temperature -65~150  t stg storage temperature -65~150  thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 1.5 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors BUX37 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1a; i b =0 400 v v (br)ebo emitter-base breakdown voltage i e =50ma; i c =0 7 v v cesat-1 collector-emitter saturation voltage i c =7 a;i b =0.07 a 1.5 v v cesat-2 collector-emitter saturation voltage i c =10 a;i b =0.15a 2.0 v v besat base-emitter saturation voltage i c =10 a;i b =0.15a 2.7 v i cbo collector cut-off current v cb =400v;i e =0 0.1 ma i ceo collector cut-off current v ce =400v;i b =0 0.25 ma h fe-1 dc current gain i c =8a ; v ce =5v 100 h fe-2 dc current gain i c =15a ; v ce =5v 20
savantic semiconductor product specification 3 silicon npn power transistors BUX37 package outline fig.2 outline dimensions


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