sm16gz51, SM16JZ51 2006-10-30 1 toshiba bi ? directional triode thyristor silicon planar type sm16gz51, SM16JZ51 ac power control applications z repetitive peak off ? state voltage: v drm = 400v, 600 v z r.m.s on ? state current: i t (rms) = 16 a z high commutating (dv / dt): (dv / dt) c = 10 v / s z isolation voltage: v isol = 1500 v ac absolute maximum ratings characteristic symbol rating unit sm16gz51 400 repetitive peak off ? state voltage SM16JZ51 v drm 600 v r. m. s. on ? state current (full sine waveform ta = 82c) i t (rms) 16 a 150 (50 hz) peak one cylce surge on ? state current (non ? repetitive) i tsm 165 (60 hz) a i 2 t limit value i 2 t 112.5 a 2 s critical rate of rise of on ? state current (note 1) di / dt 50 a / s peak gate power dissipation p gm 5 w average gate power dissipation p g (av) 0.5 w peak gate voltage v gm 10 v peak gate current i gm 2 a junction temperature t j ? 40~125 c storage temperature range t stg ? 40~125 c isolation voltage (ac, t = 1 min.) v isol 1500 v note 1: di / dt test condition v drm = 0.5 rated, i tm 25 a, t gw 10 s, t gr 250 ns, i gp = i gt 2.0 note 2: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/derating concept and methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). unit: mm jedec D jeita D toshiba 13-16a1a weight: 2.0 g (typ.)
sm16gz51, SM16JZ51 2006-10-30 2 electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit repetitive peak off ? state current i drm v drm = rated D D 20 a i t2 (+) , gate (+) D D 1.5 ii t2 (+) , gate ( ? ) D D 1.5 iii t2 ( ? ) , gate ( ? ) D D 1.5 gate trigger voltage iv v gt v d = 12 v, r l = 20 ? t2 ( ? ) , gate (+) D D D v i t2 (+) , gate (+) D D 30 ii t2 (+) , gate ( ? ) D D 30 iii t2 ( ? ) , gate ( ? ) D D 30 gate trigger current iv i gt v d = 12 v, r l = 20 ? t2 ( ? ) , gate (+) D D D ma peak on ? state voltage v tm i tm = 25 a D D 1.5 v gate non ? trigger voltage v gd v d = rated, tc = 125c 0.2 D D v holding current i h v d = 12 v, i tm = 1 a D D 50 ma thermal resistance r th (j ? c) junction to case, ac D D 1.8 c / w critical rate of rise of off ? state voltage dv / dt v drm = rated, t j = 125c exponential rise D 300 D v / s critical rate of rise of off ? state voltage at commutation (dv / dt) c v drm = 400 v, t j = 125c (di / dt) c = ? 8.7 a / ms 10 D D v / s marking part no. (or abbreviation code) part no. m16gz51 sm16gz51 * 1 m16jz51 SM16JZ51 m16gz51 lot no. a line indicates lead (pb)-free package or lead (pb)-free finish. characteristics indicator part no. (or abbreviation code) * 1
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sm16gz51, SM16JZ51 2006-10-30 5 ? the information contained herein is subject to change without notice. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. ? toshiba is continually working to improve the quality and relia bility of its products. neve rtheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunctio n or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. ? toshiba products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030619eaa restrictions on product use
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