case: mb-f, molded plastic characteristic symbo mb05f mb1f mb2f mb4f mb6f MB8F mb10f unit weight: 0.082 grams (approx.) high surge current capability glass passivated die construction designed for surface mount application mil-std-202, method 208 mb05f ? mb10f 0.8a surface mount glass passivated bridge rectifier features ! ! low forward voltage drop ! high current capability ! ! mechanical data ! ! mil-std-202, method 208 ! polarity: as marked on case ! ! mounting position: any ! marking: type number maximum ratings and electrical characteristics @t a =25c unless otherwise specified single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. note: 1. mounted on glass epoxy pc board with 1.3mm 2 solder pad. 2. mounted on aluminum substrate pc board with 1.3mm 2 solder pad. 3. measured at 1.0 mhz and applied reverse voltage of 4.0v d.c. ! lead free: for rohs / lead free version, terminals: plated leads solderable per 5.0a t 35 70 140 280 420 560 700 v 50 100 200 400 600 800 1000 v peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r rms reverse voltage v r(rms) average rectified output current (note 1) @t a = 40c average rectified output current (note 2) @t a = 40c i o 0.5 0.8 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 30 a i 2 t rating for fusing (t < 8.3ms) i 2 2 s forward voltage per element @i f = 0.5a v fm 1.0 v peak reverse current @t a = 25c at rated dc blocking voltage @t a = 125c i rm 5.0 500 a typical junction capacitance per leg (note 3) c j 13 pf typical thermal resistance per leg (note 1) r ja r jl 60 16 c/w operating and storage temperature range t j , t stg -55 to +150 c f o r m o s a m s 7 0 . 1 5 dimensions in millimeters(1mm =0.0394") 7.0 max. 0 . 2 3 . 7 0 . 2 0 . 9 0 . 2 1 . 5 0 . 2 + . 0 . 2 0.2 0.65 0.15 2.5 4.7 0.2 0.2 0.2 + ~ _ ~ 0 . 2 5 0 . 1 mbf + + + + + + + + p a g e 1 d o c u m e n t i d i s s u e d d a t e r e v i s e d d a t e r e v i s i o n p a g e . d s - 2 4 1 1 0 3 2 0 0 8 / 0 2 / 1 0 2 0 1 0 / 0 3 / 1 0 c 2 h t t p : / / w w w. f o r m o s a m s . c o m / t e l : 8 8 6 - 2 - 2 2 6 9 6 6 6 1 fa x : 8 8 6 - 2 - 2 2 6 9 6 1 4 1 f = 0.8a 1.1 @i m?w3 f m s k i n t e r 1 3 1 6 8 0 3 0 0 5 8
0.01 0.1 1.0 10 0.2 0.6 1.0 1.4 i , inst ant aneous for w a rd current ( a) f v , instantaneous forward voltage (v) fi g .2t y pical forward characteristics ( per le g) f t=25c pulse width = 300 s j 0.4 0.8 1.2 1.6 0 10 20 30 3 5 1.0 10 i , peak for w ard surge current (a) fsm number of cycles at 60 hz fi g . 3 maximum peak forward sur g e current ( per le g) t = 25 c single half sine-wave pulse width = 5.3ms (jedec method) a 1 10 100 1 10 100 c , junction cap acit ance (pf) j v , reverse voltage (v) fi g .4 t y pical junction capacitance r t=25c f = 1.0mhz j 0.01 0.1 1.0 10 100 0 20 40 60 80 100 120 140 i , inst ant aneous reverse current ( a) r percent of rated peak reverse voltage (%) fi g .5 t y pical reverse characteristics ( per element ) t = 25 c j t = 125 c j 0 0.2 0.4 0.6 0.8 0 40 80 120 160 i , a verage for w a rd rectified current (a ) (a v) t , ambient temperature ( c) fi g . 1 output current deratin g curve a resistive or inductive load al. substrate pc board glass epoxy pc board mb05f ? mb10f f o r m o s a m s rating and characteristic curves ( t a=25 c unless otherwise noted ) p a g e 2 d o c u m e n t i d i s s u e d d a t e r e v i s e d d a t e r e v i s i o n p a g e . d s - 2 4 1 1 0 3 2 0 0 8 / 0 2 / 1 0 2 0 1 0 / 0 3 / 1 0 c 2 h t t p : / / w w w. f o r m o s a m s . c o m / t e l : 8 8 6 - 2 - 2 2 6 9 6 6 6 1 fa x : 8 8 6 - 2 - 2 2 6 9 6 1 4 1 m?w3 f m s k i n t e r 1 3 1 6 8 0 3 0 0 5 8
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