? 2010 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c - 200 v v dgr t j = 25 c to 150 c, r gs = 1m - 200 v v gss continuous + 15 v v gsm transient + 25 v i d25 t c = 25 c - 32 a i dm t c = 25 c, pulse width limited by t jm - 96 a i a t c = 25 c - 32 a e as t c = 25 c1j p d t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c f c mounting force (to-263) 10..65 / 2.2..14.6 n/lb. m d mounting torque (to-220, to-247 & to-3p) 1.13 / 10 nm/lb.in. weight to-263 2.5 g to-220 3.0 g to-3p 5.5 g to-247 6.0 g ds100288a(11/10) trenchp tm power mosfet p-channel enhancement mode avalanche rated ixta32p20t IXTP32P20T ixtq32p20t ixth32p20t v dss = - 200v i d25 = - 32a r ds(on) 130 m features z international standard packages z avalanche rated z extended fbsoa z fast intrinsic diode z low r ds(on) and q g advantages z easy to mount z space savings z high power density applications z high-side switching z push pull amplifiers z dc choppers z automatic test equipment z current regulators z battery charger applications preliminary technical information g = gate d = drain s = source tab = drain to-247 (ixth) g s d d (tab) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = - 250 a - 200 v v gs(th) v ds = v gs , i d = - 250 a - 2.0 - 4.0 v i gss v gs = 15v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v - 25 a t j = 125 c -1.25 ma r ds(on) v gs = -10v, i d = 0.5 ? i d25 , note 1 130 m to-263 aa (ixta) g s d (tab) g d s to-220ab (ixtp) d (tab) to-3p (ixtq) d g s d (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixta32p20t ixtq32p20t IXTP32P20T ixth32p20t ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s, duty cycle, d 2%. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = -10v, i d = 0.5 ? i d25 , note 1 18 30 s c iss 14.5 nf c oss v gs = 0v, v ds = - 25v, f = 1mhz 565 pf c rss 105 pf t d(on) 32 ns t r 15 ns t d(off) 57 ns t f 12 ns q g(on) 185 nc q gs v gs = -10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 66 nc q gd 45 nc r thjc 0.42 c/w r thcs to-220 0.50 c/w to-247 &to-3p 0.21 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v - 32 a i sm repetitive, pulse width limited by t jm - 128 a v sd i f = - 32a, v gs = 0v, note 1 -1.3 v t rr 190 ns q rm 1.7 c i rm -17.8 a resistive switching times v gs = -10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 1 (external) i f = -16a, -di/dt = -100a/ s v r = -100v, v gs = 0v preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2010 ixys corporation, all rights reserved ixta32p20t ixtq32p20t IXTP32P20T ixth32p20t to-247 outline 1 = gate 2 = drain 3 = source to-3p outline pins: 1 - gate 2,4 - drain 3 - source pins: 1 - gate 2 - drain 3 - source to-220 outline to-263 outline
ixys reserves the right to change limits, test conditions, and dimensions. ixta32p20t ixtq32p20t IXTP32P20T ixth32p20t fig. 1. output characteristics @ t j = 25oc -35 -30 -25 -20 -15 -10 -5 0 -4.5 -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0 v ds - volts i d - amperes v gs = -10v - 8v - 7v - 4 v - 5 v - 6 v fig. 2. extended output characteristics @ t j = 25oc -120 -100 -80 -60 -40 -20 0 -30 -25 -20 -15 -10 -5 0 v ds - volts i d - amperes v gs = -10v - 8v - 5 v - 6 v - 7 v fig. 3. output characteristics @ t j = 125oc -35 -30 -25 -20 -15 -10 -5 0 -8 -7 -6 -5 -4 -3 -2 -1 0 v ds - volts i d - amperes v gs = -10v - 7v - 6v - 5v - 4v fig. 4. r ds(on) normalized to i d = -16a vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = -10v i d = - 32a i d = -16a fig. 5. r ds(on) normalized to i d = -16a vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -110 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 i d - amperes r ds(on) - normalized v gs = -10v t j = 25oc t j = 125oc fig. 6. maximum drain current vs. case temperature -35 -30 -25 -20 -15 -10 -5 0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade i d - amperes
? 2010 ixys corporation, all rights reserved fig. 7. input admittance -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 -6.5 -6.0 -5.5 -5.0 -4.5 -4.0 -3.5 -3.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 10 20 30 40 50 60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 -1.1 -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 0 20 40 60 80 100 120 140 160 180 q g - nanocoulombs v gs - volts v ds = -100v i d = -16a i g = -1ma fig. 11. capacitance 10 100 1,000 10,000 100,000 -40 -35 -30 -25 -20 -15 -10 -5 0 v ds - volts capacitance - picofarads f = 1 mh z c iss c rss c oss fig. 12. forward-bias safe operating area 0.1 1 10 100 1000 1 10 100 1000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 100s r ds(on) limit 10ms dc - - - -- - - 100ms - - ixta32p20t ixtq32p20t IXTP32P20T ixth32p20t
ixys reserves the right to change limits, test conditions, and dimensions. ixta32p20t ixtq32p20t IXTP32P20T ixth32p20t fig. 14. resistive turn-on rise time vs. drain current 13.0 13.5 14.0 14.5 15.0 15.5 16.0 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 i d - amperes t r - nanoseconds r g = 1 ? , v gs = -10v v ds = -100v 25oc < t j < 125oc fig. 15. resistive turn-on switching times vs. gate resistance 0 20 40 60 80 100 120 140 160 0 2 4 6 8 1012141618 r g - ohms t r - nanoseconds 10 20 30 40 50 60 70 80 90 t d ( on ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = -10v v ds = -100v i d = - 64a, - 32a fig. 16. resistive turn-off switching times vs. junction temperature 9 10 11 12 13 14 15 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 40 45 50 55 60 65 70 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = -10v v ds = -100v i d = - 64a i d = - 32a fig. 17. resistive turn-off switching times vs. drain current 45 50 55 60 65 70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 i d - amperes t f - nanoseconds 10.5 11.0 11.5 12.0 12.5 13.0 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 10 ? , v gs = -10v v ds = -100v t j = 25oc t j = 125oc fig. 13. resistive turn-on rise time vs. junction temperature 13.0 13.5 14.0 14.5 15.0 15.5 16.0 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 1 ? , v gs = -10v v ds = -100v - 64a < i d < - 32a fig. 18. resistive turn-off switching times vs. gate resistance 0 20 40 60 80 100 120 140 0 2 4 6 8 1012141618 r g - ohms t f - nanoseconds 20 60 100 140 180 220 260 300 t d ( off ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = -10v v ds = -100v i d = - 32a i d = - 64a
? 2010 ixys corporation, all rights reserved ixys ref: t_32p20t(a6)10-14-10 fig. 19. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w ixta32p20t ixtq32p20t IXTP32P20T ixth32p20t
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