bdy26 ? 183T2 bdy27 ? 184t2 bdy28 ? 185t2 1 | 3 24/09/2012 comset semiconductors n n p p n n s s i i l l i i c c o o n n t t r r a a n n s s i i s s t t o o r r s s , , d d i i f f f f u u s s e e d d m m e e s s a a . . they are npn transistors mounted in jedec to-3. lf large signal power amplification. high current fast switching. compliance to rohs. absolute maximum ratings symbol ratings value unit v ceo collector-emitter voltage bdy26, 183T2 180 v bdy27, 184t2 200 bdy28, 185t2 250 v cbo collector-base voltage bdy26, 183T2 300 v bdy27, 184t2 400 bdy28, 185t2 500 v ebo emitter-base voltage 10 v i c collector current 6 a i b base current 3 a p tot power dissipation @ t c = 25 87.5 w t j junction temperature 200 c t s storage temperature -65 to +200 thermal characteristics symbol ratings value unit r thj-c thermal resistance, junction to case 2 c/w
bdy26 ? 183T2 bdy27 ? 184t2 bdy28 ? 185t2 2 | 3 24/09/2012 comset semiconductors electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit v ceo(br) collector-emitter breakdown voltage (*) i c =50 ma i b =0 bdy26, 183T2 180 - - v bdy27, 184t2 200 - - bdy28a, 185t2a 250 - - bdy28b, 185t2b 250 - - bdy28c, 185t2c 220 - - v (br)cbo collector-base breakdown voltage (*) i c =3 ma bdy26, 183T2 300 - - v bdy27, 184t2 400 - - bdy28, 185t2 500 - - i ceo collector-emitter cutoff current v ce =180 v bdy26 - - 1.0 ma v ce =200 v bdy27 - - v ce =250 v bdy28 - - i ebo emitter-base cutoff current v eb =10 v bdy26, 183T2 bdy27, 184t2 bdy28, 185t2 - - 1.0 ma i ces collector-emitter cutoff current v ce =250 v v be =0 v bdy26, 183T2 - - 1.0 ma v ce =300 v v be =0 v bdy27, 184t2 - - v ce =400 v v be =0 v bdy28, 185t2 - - v ce(sat) collector-emitter saturation voltage (*) i c =2.0 a i b =0.25 a bdy26, 183T2 - - 0.6 v bdy27, 184t2 - - bdy28, 185t2 - - v be(sat) base-emitter saturation voltage (*) i c =2.0 a i b =0.25 a bdy26, 183T2 - - 1.2 v bdy27, 184t2 - - bdy28, 185t2 - - h fe dc current gain v ce =4 v i c =1 a a - 55 - - b - 65 - c - 90 - v ce =4 v i c =2 a a 15 20 45 b 30 45 90 c 75 82 180 f t transition frequency v ce = 15 v, i c = 0.5 a, f= 10 mhz 10 - - mhz t d + t r turn-on time i c = 5 a, i b = 1 a - 0.3 0.5 s t s + t f turn-off time i c = 5 a, i b1 = 1 a, i b2 = -0.5 a - 1.5 2.0 s (*) pulse width 300 s, duty cycle 2%
bdy26 ? 183T2 bdy27 ? 184t2 bdy28 ? 185t2 3 | 3 24/09/2012 comset semiconductors mechanical data case to-3 revised august 2012 ????????? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. co mset semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does comset semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. comset semiconductors? products are not au thorized for use as critical components in life support devices or systems. ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min max a 11 13.10 b 0.97 1.15 c 1.5 1.65 d 8.32 8.92 f 19 20 g 10.70 11.1 n 16.50 17.20 p 25 26 r 4 4.09 u 38.50 39.30 v 30 30.30 pin 1 : base pin 2 : emitter case : collector
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