n - channel 30 - v (d - s) mosfet LT4420C rev 2 . nov . 20 10 parameter symbol 10 secs steady state unit drainsource voltage v dss 30 v gatesource voltage v gss 20 v t a =25 13.5 9.5 continuous drain current(tj=150 ) t a =70 i d 10.8 7.0 a pulsed drain current i dm 50 a continuous source current (diode conduction) i s 2.7 1.36 a t a =25 3 1.5 maximum power dissipation t a =70 p d 1.9 0.95 w operating junction temperature t j 55 to 150 tQ10 sec 33 thermal resistancejunction to ambient * r ja steady state 63 /w thermal resistancejunction to case r jc 30 /w general description the LT4420C is the nchannel logic enhancement mode power field effect transistors are produced using high ce ll density, dmos trench technology. this high density process is esp ecially tailored to minimize onstate resistance. these devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter y powered circuits where highside switching, and low inline power loss are needed in a very small outline surface mou nt package. features 30v/13.5a,r ds(on) =13m@v gs =10v 30v/11a,r ds(on) =18m@v gs =4.5v super high density cell design for extremely low r ds(on) exceptional onresistance and maximum dc current capability applications power management in note book portable equipment battery powered system dc/dc converter load switch dsc lcd display inverter pin configuration (sop8) top view absolute maximum ratings (t a =25 unless otherwise noted) * the * * the device mounted on 1in 2 fr4 board with 2 oz copper
n - channel 30 - v (d - s) mosfet LT4420C rev 2 . nov . 20 10 notes: a. pulse test; pulse width Q 300us, duty cycle Q 2% symbol parameter limit min typ max unit static v gs(th) gate threshold voltage v ds =v gs , i d =250 a 1.0 2.0 3.0 v i gss gate leakage current v ds =0v, v gs =20v 100 na v ds =30v, v gs =0v 1 i dss zero gate voltage drain current v ds =30v, v gs =0v t j =55 5 a i d(on) onstate drain current a v d s R 5v, v gs = 10v 30 a v gs =10v, i d = 13.5a 11 13 r ds(on) drainsource onstate resistance a v gs =4.5v, i d = 11a 15 18 m g fs forward transconductance a v ds =15v, i d =10a 17 s v sd diode forward voltage i s =2.3a, v gs =0v 0.76 1.1 v dynamic qg gate charge v ds =15v, v gs =4.5v, i d =10a 12 14 qgt total gate charge 23 26 qgs gatesource charge 5 qgd gatedrain charge v ds =15v, v gs =10v, i d =10a 4.9 nc ciss input capacitance 1100 1300 coss output capacitance 250 crss reverse transfer capacitance v ds =15v, v gs =0v, f=1mhz 65 pf rg gate resistance f =1mhz 1.8 t d(on) turnon delay time 15 18 tr turnon rise time 14 17 t d(off) turnoff delay time 50 65 t f turnon fall time v dd =25v, r l =25 i d =1a, v gen =10v r g =6 6 8 ns electrical characteristics (t a =25 unless otherwise specified)
n - channel 30 - v (d - s) mosfet LT4420C rev 2 . nov . 20 10 typical characteristics (t j =25 noted)
n - channel 30 - v (d - s) mosfet LT4420C rev 2 . nov . 20 10 typical characteristics (t j =25 noted)
n - channel 30 - v (d - s) mosfet LT4420C rev 2 . nov . 20 10 sop-8 package outline notes: 1. pkg all surfaces are ra0.8-1.2um. 2. mold flash, protrusions or gate burrs shall not exceed 0.15 mm in total (both sides).
n - channel 30 - v (d - s) mosfet LT4420C rev 2 . nov . 20 10 important notice and disclaimer lsc reserves the right to make changes to this docu ment and its products and specifications at any time without notice. customer s should obtain and confirm the latest product information and specifications befor e final design, purchase or use. lsc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does lsc a ssume any liability for application assistance or customer product design. lsc does not warrant or accept any liability with products which are purchased or used for any u nintended or unauthorized application. no license is granted by implication or otherwise u nder any intellectual property rights of lsc. lsc products are not authorized for use as critical components in life support devices or systems without express written approval of lsc.
|
