cystech electronics corp. spec. no. : c619n3 issued date : 2012.08.21 revised date : page no. : 1/7 BTP9050N3 cystek product specification high voltage pnp epitaxial planar transistor BTP9050N3 description ? high breakdown voltage. (bv ceo =-500v) ? low saturation voltage, typical v ce(sat) =-0.11v at ic/i b =-20ma/-2ma. ? complementary to btna45n3 ? pb-free lead plating and halogen-free package symbol outline absolute maximum ratings (ta=25 c) parameter symbol limits unit collector-base voltage v cbo -500 v collector-emitter voltage v ceo -500 v emitter-base voltage v ebo -7 v collector current(dc) i c -150 ma peak collector current , single pulse, pulse width tp<1ms i cm -500 ma peak base current, single pulse, pulse width tp<1ms i bm -200 ma power dissipation p d 300 (note) mw operating junction and storage temp erature range tj ; tstg -55~+150 c note : device mounted on a fr-4 pcb, single side d copper, tin plated and standard footprint. BTP9050N3 sot-23 c e b b base c collector e emitter
cystech electronics corp. spec. no. : c619n3 issued date : 2012.08.21 revised date : page no. : 2/7 BTP9050N3 cystek product specification thermal characteristics parameter symbol limit unit thermal resistance, junction-to-ambient, in free air (note) rth,j-a 417 thermal resistance, junction- to-solder point rth,j-sp 70 c/w note : device mounted on a fr-4 pcb, single side d copper, tin plated and standard footprint. characteristics (ta=25 c) symbol min. typ. max. unit test conditions bv cbo -500 - - v i c =-100 a bv ceo -500 - - v i c =-1ma bv ebo -7 - - v i e =-50 a i cbo - - -100 na v cb =-480v i ces - - -100 na v ce =-480v, v be =0v i ebo - - -100 na v eb =-7v *v ce(sat) - -0.11 -0.2 v i c =-20ma, i b =-2ma *v ce(sat) - -0.11 -0.2 v i c =-50ma, i b =-10ma *v be(sat) - -0.79 -0.9 v i c =-50ma, i b =-10ma *h fe 1 100 - 300 - v ce =-10v, i c =-10ma *h fe 2 80 - 300 - v ce =-10v, i c =-50ma *h fe 3 50 - - - v ce =-10v, i c =-100ma f t - 50 - mhz v ce =-10v, i c =-10ma, f=10mhz cob - 12 - pf v cb =-10v, i e =0a, f=1mhz cib - 85 - pf v eb =-0.5v, i c =0a, f=1mhz *pulse test: pulse width 380 s, duty cycle 2% ordering information device package shipping BTP9050N3-0-t1-g sot-23 (pb-free lead plating an d halogen-free package) 3000 pcs / tape & reel
cystech electronics corp. spec. no. : c619n3 issued date : 2012.08.21 revised date : page no. : 3/7 BTP9050N3 cystek product specification typical characteristics emitter grounded output characteristics 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0123456 -v ce , collector-to-emitter voltage(v) -i c , collector current(a) 200ua 300ua 400ua 500ua 1ma -i b =100ua emitter grounded output characteristics 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 0123456 -v ce , collector-to-emitter voltage(v) -i c , collector current(a) 1ma 2.5ma 5ma -i b =500ua emitter grounded output characteristics 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 0123456 -v ce , collector-to-emitter voltage(v) -i c , collector current(a) -i b =2ma 4ma 6ma 10ma 20ma emitter grounded output characteristics 0 0.05 0.1 0.15 0.2 0.25 0.3 0123456 -v ce , collector-to-emitter voltage(v) -i c , collector current(a) -i b =5ma 10ma 15ma 25ma 50ma current gain vs collector current 1 10 100 1000 1 10 100 1000 -i c , collector current(ma) h fe , current gain 125c 75c 25c -v ce =5v current gain vs collector current 1 10 100 1000 1 10 100 1000 -i c , collector current(ma) h fe , current gain 125c 75c 25c -v ce =10v
cystech electronics corp. spec. no. : c619n3 issued date : 2012.08.21 revised date : page no. : 4/7 BTP9050N3 cystek product specification typical characteristics saturation voltage vs collector current 10 100 1000 10000 1 10 100 -i c , collector current(ma) saturation voltage(mv) 125c 75c 25c v cesat @i c =10i b saturation voltage vs collector current 100 1000 10000 1 10 100 -i c , collector current(ma) saturation voltage(mv) 125c 75c 25c v cesat @i c =20i b saturation voltage vs collector current 100 1000 1 10 100 1000 -i c , collector current(ma) saturation voltage(mv) v besat @i c =10i b 25c 75c 125c on voltage vs collector current 100 1000 0.1 1 10 100 1000 -i c , collector current(ma) on voltage(mv) v beon @v ce =-10v 25c 75c 125c power derating curve 0 50 100 150 200 250 300 350 0 50 100 150 200 t a , ambient temperature() p d , power dissipation(mw) device mounted on fr-4 board of minimum pad size capacitance vs reverse-biased voltage 1 10 100 1000 0.1 1 10 100 v r , reverse-biased voltage(v) capacitance(pf) cib cob
cystech electronics corp. spec. no. : c619n3 issued date : 2012.08.21 revised date : page no. : 5/7 BTP9050N3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c619n3 issued date : 2012.08.21 revised date : page no. : 6/7 BTP9050N3 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c619n3 issued date : 2012.08.21 revised date : page no. : 7/7 BTP9050N3 cystek product specification sot-23 dimension *:typical inches h j k d a l g v c b 3 2 1 s style : pin 1.base 2.emitter 3.collector 3-lead sot-23 plastic surface mounted package cystek package code: n3 marking: product code date code: year+month year: 7 2007, 8 2008 month: 1 1, 2 2, ??? 9 9, a 10, b 11, c 12 ll millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.1102 0.1204 2.80 3.04 j 0.0031 0.0071 0.08 0.18 b 0.0472 0.0630 1.20 1.60 k 0.0128 0.0266 0.32 0.67 c 0.0335 0.0512 0.89 1.30 l 0.0335 0.0453 0.85 1.15 d 0.0118 0.0197 0.30 0.50 s 0.0830 0.1161 2.10 2.95 g 0.0669 0.0910 1.70 2.30 v 0.0098 0.0256 0.25 0.65 h 0.0005 0.0040 0.013 0.10 notes : 1.controlling dimension : millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material : ? lead : pure tin plated. ? mold compound : epoxy resin family, flammability solid burning class:ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cysrek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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