? 2009 ixys corporation, all rights reserved ds99903b(07/09) IXGH36N60B3D1 v ces = 600v i c110 = 36a v ce(sat) 1.8v g = gate c = collector g c e to-247 e = emitter tab = collector symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 600 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces , v ge = 0v 300 a t j =125 c 1.75 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 30a, v ge = 15v, note 1 1.5 1.8 v symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c, r ge = 1m 600 v v ges continuous 20 v v gem transient 30 v i c110 t c = 110 c 36 a i f110 t c = 110 c 30 a i cm t c = 25 c, 1ms 200 a ssoa v ge = 15v, t vj = 125 c, r g = 5 i cm = 80 a (rbsoa) clamped inductive load v ce v ces p c t c = 25 c 250 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque 1.13/10 nm/lb.in. weight 6 g genx3 tm 600v igbt w/ diode features z optimized for low conduction and switching losses z square rbsoa z anti-parallel ultra fast diode z international standard package advantages z high power density z low gate drive requirement applications z power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts medium-speed low-vsat pt igbt for 5 - 40khz switching (tab)
ixys reserves the right to change limits, test conditions, and dimensions. IXGH36N60B3D1 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 to-247 outline (ixgh) dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc ? p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 30a, v ce = 10v, note 1 28 42 s c ies 2280 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 120 pf c res 32 pf q g 80 nc q ge i c = 30a, v ge = 15v, v ce = 0.5 ? v ces 12 nc q gc 36 nc t d(on) 19 ns t ri 24 ns e on 0.54 mj t d(off) 125 200 ns t fi 100 160 ns e off 0.8 1.5 mj t d(on) 19 ns t ri 26 ns e on 0.9 mj t d(off) 180 ns t fi 170 ns e off 1.5 mj r thjc 0.50 c/w r thcs 0.21 c/w inductive load, t j = 25 c i c = 30a, v ge = 15v v ce = 400v, r g = 5 inductive load, t j = 125 c i c = 30a, v ge = 15v v ce = 400v, r g = 5 note 1. pulse test, t 300 s; duty cycle, d 2%. reverse diode (fred) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v f i f = 30a, v ge = 0v, note 1 2.8 v t j = 150 c 1.7 v i rm i f = 30a, v ge = 0v, -di f /dt = 100a/ s, t j = 100 c 6 a v r = 100v t rr i f = 1a, -di f /dt =100a/ s, v r = 30v 25 ns t j = 100 c 100 ns r thjc 0.9 c/w
? 2009 ixys corporation, all rights reserved IXGH36N60B3D1 fig. 1. output characteristics @ 25oc 0 5 10 15 20 25 30 35 40 45 50 55 60 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v ce - volts i c - amperes v ge = 15v 13v 11v 9v 7v 5v fig. 2. extended output characteristics @ 25oc 0 30 60 90 120 150 180 210 240 270 300 02468101214 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 3. output characteristics @ 125oc 0 5 10 15 20 25 30 35 40 45 50 55 60 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v ce - volts i c - amperes v ge = 15v 13v 11v 9v 7v 5v fig. 4. dependence of v ce(sat) on junction temperature 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 1.25 1.30 1.35 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 60a i c = 30a i c = 15a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 56789101112131415 v ge - volts v ce - volts i c = 60a 30a 15a t j = 25oc fig. 6. input admittance 0 20 40 60 80 100 120 140 160 180 200 220 240 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 v ge - volts i c - amperes t j = - 40oc 25oc 125oc
ixys reserves the right to change limits, test conditions, and dimensions. IXGH36N60B3D1 fig. 7. transconductance 0 10 20 30 40 50 60 70 80 90 0 30 60 90 120 150 180 210 240 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 102030405060708090 q g - nanocoulombs v ge - volts v ce = 300v i c = 30a i g = 10ma fig. 10. reverse-bias safe operating area 0 10 20 30 40 50 60 70 80 90 100 150 200 250 300 350 400 450 500 550 600 650 v ce - volts i c - amperes t j = 125oc r g = 5 ? dv / dt < 10v / ns fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res fig. 11. maximum transient thermal impedance 0.01 0.10 1.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w ixys ref: g_36n60b3(55) 5-05-08-c
? 2009 ixys corporation, all rights reserved IXGH36N60B3D1 fig. 12. inductive switching energy loss vs. gate resistance 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 10 20 30 40 50 60 70 80 90 100 110 120 r g - ohms e off - millijoules 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 400v i c = 30a i c = 60a i c = 15a fig. 15. inductive turn-off switching times vs. gate resistance 120 140 160 180 200 220 240 260 280 300 320 0 102030405060708090100110120 r g - ohms t f - nanoseconds 100 200 300 400 500 600 700 800 900 1000 1100 t d(off) - nanoseconds t f t d(off) - - - - t j = 125oc, v ge = 15v v ce = 400v i c = 15a, 30a, 60v fig. 13. inductive switching energy loss vs. collector current 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 15 20 25 30 35 40 45 50 55 60 i c - amperes e off - millijoules 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 e on - millijoules e off e on - - - - r g = 5 ? , v ge = 15v v ce = 400v t j = 125oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 e on - millijoules e off e on - - - - r g = 5 ? , v ge = 15v v ce = 400v i c = 30a i c = 60a i c = 15a fig. 16. inductive turn-off switching times vs. collector current 90 100 110 120 130 140 150 160 170 180 190 200 210 220 15 20 25 30 35 40 45 50 55 60 i c - amperes t f - nanoseconds 100 110 120 130 140 150 160 170 180 190 200 210 220 230 t d(off) - nanoseconds t f t d(off) - - - - r g = 5 ? , v ge = 15v v ce = 400v t j = 125oc t j = 25oc fig. 17. inductive turn-off switching times vs. junction temperature 90 105 120 135 150 165 180 195 210 225 240 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 100 110 120 130 140 150 160 170 180 190 200 t d(off) - nanoseconds t f t d(off) - - - - r g = 5 ? , v ge = 15v v ce = 400v i c = 30a, 60a i c = 15a
ixys reserves the right to change limits, test conditions, and dimensions. IXGH36N60B3D1 ixys ref: g_36n60b3(55) 5-05-08-c fig. 18. inductive turn-on switching times vs. gate resistance 0 15 30 45 60 75 90 105 120 135 150 0 10 20 30 40 50 60 70 80 90 100 110 120 r g - ohms t r - nanoseconds 10 20 30 40 50 60 70 80 90 100 110 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 400v i c = 15a, 30a, 60a fig. 19. inductive turn-on switching times vs. collector current 10 15 20 25 30 35 40 45 50 55 60 15 20 25 30 35 40 45 50 55 60 i c - amperes t r - nanoseconds 15 16 17 18 19 20 21 22 23 24 25 t d(on) - nanoseconds t r t d(on ) - - - - r g = 5 ? , v ge = 15v v ce = 400v t j = 125oc t j = 25oc fig. 20. inductive turn-on switching times vs. junction temperature 5 10 15 20 25 30 35 40 45 50 55 60 65 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds 15 16 17 18 19 20 21 22 23 24 25 26 27 t d(on) - nanoseconds t r t d(on) - - - - r g = 5 ? , v ge = 15v v ce = 400v i c = 15a i c = 30a i c = 60a
? 2009 ixys corporation, all rights reserved diode curves IXGH36N60B3D1 200 600 1000 0 400 800 60 70 80 90 0.00001 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 1 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 5 10 15 20 0.00 0.25 0.50 0.75 1.00 v fr di f /dt v 200 600 1000 0 400 800 0 5 10 15 20 25 30 100 1000 0 200 400 600 800 1000 0123 0 10 20 30 40 50 60 i rm q r i f a v f -di f /dt -di f /dt a/ s a v nc a/ s a/ s t rr ns t fr z thjc a/ s s dsep 29-06 i f = 60a i f = 30a i f = 15a t vj = 100c v r = 300v t vj = 100c i f = 30a fig. 23. peak reverse current i rm versus -di f /dt fig. 22. reverse recovery charge q r versus -di f /dt fig. 21. forward current i f versus v f t vj = 100c v r = 300v t vj = 100c v r = 300v i f = 60a i f = 30a i f = 15a q r i rm fig. 20. dynamic parameters q r , i rm fig. 25. recovery time t rr versus -di f /dt fig. 26. peak forward voltage v fr and t fr versus di f /dt i f = 60a i f = 30a i f = 15a t fr v fr fig. 27. transient thermal resistance junction to case constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.502 0.0052 2 0.193 0.0003 3 0.205 0.0162 t vj =25c t vj =100c t vj =150c fig. 24. dynamic parameters q r , i rm versus t vj ixys ref: g_36n60b3(55) 5-05-08-c
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