1 n-channel 30-v (d-s) mosfet features ? halogen-free accor ding to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % r g test ed ? compl iant to rohs directive 2002/95/ec applications ? dc/dc conver ter product summary v ds (v) r ds(on) ( ) i d (a ) a q g (t yp.) 30 0.058 at v gs = 10 v 4 2.1 nc 0.065 at v gs = 4.5 v 3.8 g s d to p v ie w 2 3 t o-236 (sot-23) 1 dts3402 n -channel mosfet g d s notes: a. package limited b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. maximum under steady state conditions is 130 c/w. absolute maximum ratings t a = 25 c , unless otherwise noted p a rameter symbol limit unit drain-source v oltage v ds 30 v gat e -source voltage v gs 20 contin uous d r ain current (t j = 150 c) t c = 25 c i d 4.0 a a t c = 70 c 3.3 t a = 25 c 4.0 t a = 70 c 3.7 pulsed drai n current i dm 15 contin uous sou r ce-dr ain diode cu rren t t c = 25 c i s 1.4 t a = 25 c 0.9 b, c max imu m power dissipation t c = 25 c p d 1.7 w t c = 70 c 1.1 t a = 25 c 1.1 b, c t a = 70 c 0.7 b, c ope rating j unction and storage temperature range t j , t stg - 55 to 150 c solder in g recommendations (p eak t emperature ) d, e 260 thermal resistance rati ngs p aramet er symbol t ypica l maximum un it maxim um junction-to-ambient b, d t 5 s r thj a 90 115 c /w maximum j unction-to-foot (drain) steady state r thjf 60 75 dt s 3400 www.din-tek.jp
2 no tes: a. p ulse test; pulse width d 300 s, duty cycle d 2 % b. guaranteed by design, not s ubject to production testing. st resses beyond t hose listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. s pecifications t j = 25 c, unless otherwise noted p aram eter symb ol t est cond itions min. typ. max. un it static drain-source breakdo wn voltage v ds v gs = 0 v , i d = 25 0 a 30 v v ds t emperature coefficient ' v ds /t j i d = 250 a 31 mv/c v gs( th) t emperature co efficient ' v gs(t h) /t j - 5 gate-s o urce threshold voltage v gs( th) v ds = v gs , i d = 250 a 1.2 2.2 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na z ero gate voltage dr ain current i dss v ds = 30 v , v gs = 0 v 1 a v ds = 30 v , v gs = 0 v , t j = 55 c 10 on-state drain current a i d( on ) v ds t 5 v , v gs = 1 0 v 10 a drain-source on-state resista nce a r ds( on) v gs 10 v , i d = 3.2 a 0.049 0.058 : v gs 4.5 v , i d = 2.8 a 0.051 0.065 forward tr ansconductance a g fs v ds = 15 v , i d = 4.8 a 11 s dy nam i c b inpu t capacitance c iss v ds = 15 v , v gs = 0 v , f = 1 mhz 235 pf output capacitance c oss 45 re verse transfer capacitance c rss 17 t otal gate charge q g v ds = 15 v, v gs = 10 v, i d = 3.4 a 4.5 6.7 nc v ds = 15 v , v gs = 4.5 v , i d = 3.4 a 2.1 3.2 gate-source charge q gs 0.85 gate- drain charg e q gd 0.65 g ate resistance r g f = 1 mhz 0.8 4.4 8.8 : tu r n - o n d e l ay t i m e t d(o n) v dd = 15 v , r l = 5.6 : i d # 2. 7 a, v gen = 4 .5 v, r g = 1 : 12 20 ns rise time t r 50 75 turn-off dela y time t d(o ff) 12 20 fall time t f 22 35 tu r n - o n d e l ay t i m e t d(o n) v dd = 15 v , r l = 5.6 : i d # 2.7 a, v gen = 10 v , r g = 1 : 51 0 rise time t r 12 20 turn-off dela y time t d(o ff) 10 15 fall t ime t f 51 0 drain -source b ody diode characteristics continuous source-drain diode current i s t c = 25 c 1.4 a pulse diod e forward current i sm 15 body diode v oltage v sd i s = 2.7 a, v gs 0 v 0.8 1.2 v body diode re v e rse reco v e r y t ime t rr i f = 2.7 a, di/dt = 100 a/s, t j = 25 c 10 20 ns body diode reverse reco very charge q rr 51 0nc rev erse recovery fall time t a 6 ns re verse recove ry rise time t b 4 ' 7 6 z z z g l q w h n m s
3 typica l c har ac teri stic s 25 c, unless otherwise noted o utput characteristics on-resistance vs. drain current and gate voltage gate charge 0 3 6 9 12 15 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =1 0 v thr u 4 v v gs =3 v v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0.00 0.02 0.04 0.06 0.0 8 0.10 0 3691215 v gs =4 . 5 v v gs =1 0 v - on -resistance ( ) r ds(on ) i d - drain c u rrent (a) 0 2 4 6 8 10 0 12345 v ds =2 4 v v ds =7 .5 v i d =3 .4a v ds =1 5 v - gate -to-so u rce v oltage ( v ) q g - t otal gate charge (nc) v gs t ransfer characteristics capacitance on-resistance vs. junction temperature 0 1 2 3 4 5 0.0 0 .5 1.0 1 .5 2.0 2.5 3.0 3.5 t c = 25 c t c = 125 c t c = - 55 c v gs - gate-to- so u rce v oltage ( v ) - drain c u rrent (a) i d c rss 0 50 100 150 200 250 300 0 5 10 15 20 25 30 c is s c oss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 - 50 - 25 0 25 50 75 100 125 150 i d =3 .2a v gs =1 0 v t j -j u nction temperat u re (c) ( n ormalized) - on -resistance r ds (o n ) dt s 3400 www.din-tek.jp
4 ty pi cal ch ara cteristics 25 c, unless otherwise noted so urce-dra in diode forward voltage threshold voltage 0.1 1 10 100 0.0 0 .3 0.6 0.9 1.2 1.5 t j = 150 c t j = 25 c v sd -s o u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 1.2 1.4 1.6 1. 8 2.0 2.2 2.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ( v ) v gs( th) t j - temperat u re (c) on-resistance v s. gate-to-source voltage single pulse power 0.04 0.06 0.0 8 0.10 0.12 0.14 02 46 8 10 i d =3 .2a t j =2 5 c t j = 125 c - on -resistance ( ) r ds( on) v gs - gate-to-s o u rce v oltage ( v ) 0 5 10 15 20 25 po w er ( w ) time (s) 10 1000 0.1 0.01 0.001 100 1 safe op erating area, junction -to-ambient 100 1 0.1 1 10 100 0.01 10 0.1 t a = 25 c single p u lse 100 ms limited b yr ds (on) * b v dss limited 1m s 100 s 10 ms dc v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds (on) is specified - drain c u rrent (a) i d 1s ,10s dt s 3400 www.din-tek.jp
5 typica l c har ac teri stic s 25 c, unless otherwise noted * t he power dissipation p d is based on t j( max) = 150 c, using junction-to-case th ermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determ ine the current rating, when this rating falls below the package limit. current derating* 0 1 2 3 4 5 0 255075 100125150 package limited t c - case temperat u re (c) i d - drain c u rrent (a) power derating 0.0 0.5 1.0 1.5 2.0 25 50 75 100 125 150 t c - case temperat u re (c) po w er ( w dt s 3400 www.din-tek.jp
6 ty pi cal ch ara cteristics 25 c, unless otherwise noted . norm alized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 sq u are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. pe r unit base = r thja =1 30 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty cycle = 0.5 single p u lse 0.02 0.05 no rmalized thermal tran sient impedance, junction-to-foot 1 0.1 0.01 d u ty cycle = 0.5 sq u are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 10 -3 10 -2 1 10 -1 10 -4 0.02 single p u lse 0.1 0.2 0.05 dt s 3400 www.din-tek.jp
1 sot-23 ( t o-236): 3-lead b e e 1 1 3 2 s e e 1 d a 2 a a 1 c s e a ting pla ne 0.10 mm 0.004" c c l 1 l q g au ge pl a ne s e a ting pla ne 0.25 mm dim millimet ers inches mi n max mi n max a 0 .89 1.12 0.0 35 0.044 a 1 0 .01 0.10 0.0004 0.004 a 2 0 .88 1.02 0.0 346 0.040 b 0. 35 0.50 0.014 0.020 c 0.085 0.18 0.00 3 0.007 d 2.80 3.04 0.110 0.120 e 2.10 2.64 0.08 3 0.104 e 1 1 .20 1.40 0.047 0.055 e 0.95 bsc 0.0 3 74 ref e 1 1.90 bsc 0.0 748 ref l 0 .40 0.60 0.016 0.024 l 1 0.6 4 ref 0. 025 ref s 0.50 ref 0.020 ref q 3 8 38 ecn: s-0 3 946-rev. k, 09-jul-01 dwg: 5479 package information www.din-tek.jp
1 application note rec ommended minimum pads for sot-23 0.106 (2.692) recommended mi nimum pads dimensions in inches/(mm) 0.022 (0.559) 0.049 (1.245) 0.029 (0.724) 0.037 (0.950) 0.053 (1.341) 0.097 (2.459) return to index r etur n to index $ s s o l f d w l r q 1 r w h www.din-tek.jp
1 disclaimer all prod uct, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. din-tek intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, din-tek ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. din-tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, din-tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on din-tek s knowledge of typical requirements that are often placed on din-tek products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify din-tek s terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, din-tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the din-tek product could result in personal injury or death. customers using or selling din-tek products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized din-tek personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of din-tek . product names and markings noted herein may be trad emarks of their respective owners. material category policy din-tek intertech nology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some din-tek documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. din-tek intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some din-tek documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards. legal disclaimer notice www.din-tek.jp
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