SI3455ADV product summary v ds (v) r ds(on) ( ) i d (a) ? 30 0.100 @ v gs = ? 10 v ? 3.5 ? 30 0.170 @ v gs = ? 4.5 v ? 2.7 (4) s (3) g (1, 2, 5, 6) d p-channel mosfet tsop-6 top view 6 4 1 2 3 5 2.85 mm 3 mm ordering information: SI3455ADV-t1 SI3455ADV-t1?e3 (lead free) marking code: a5xxx absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 5 secs steady state unit drain-source voltage v ds ? 30 v gate-source voltage v gs 20 v continuous drain current (t j = 150 c) a t a = 25 c i d ? 3.5 ? 2.7 c on ti nuous d ra i n c urren t (t j = 150 c) a t a = 70 c i d ? 2.8 ? 2.1 a pulsed drain current i dm ? 20 a continuous source current (diode conduction) a i s ? 1.7 ? 0.95 maximum power dissipation a t a = 25 c p d 2.0 1.14 w maximum power dissipation a t a = 70 c p d 1.3 0.73 w operating junction and storage temperature range t j , t stg ? 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit mi j ti tabit a t 5 sec r 50 62.5 maximum junction-to-ambient a steady state r thja 90 110 c/w maximum junction-to-foot (drain) steady state r thjf 30 36 c/w notes a. surface mounted on 1? x 1? fr4 board. product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = ? 250 a ? 1.0 ? 3.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = ? 30 v, v gs = 0 v ? 1 a zero gate voltage drain current i dss v ds = ? 30 v, v gs = 0 v, t j = 85 c ? 5 a on-state drain current a i d(on) v ds ? 5 v, v gs = ? 10 v ? 20 a drain source on state resistance a r ds( ) v gs = ? 10 v, i d = ? 3.5 a 0.080 0.100 drain-source on-state resistance a r ds(on) v gs = ? 4.5 v, i d = ? 2.7 a 0.140 0.170 forward transconductance a g fs v ds = ? 15 v, i d = ? 3.5 a 6 s diode forward voltage a v sd i s = ? 1.7 a, v gs = 0 v ? 0.8 ? 1.2 v dynamic b total gate charge q g 8.5 13 gate-source charge q gs v ds = ? 15 v, v gs = ? 10 v, i d = ? 3.5 a 2.2 nc gate-drain charge q gd 1.5 turn-on delay time t d(on) 10 20 rise time t r v dd = ? 15 v, r l = 15 7 15 turn-off delay time t d(off) v dd = 15 v , r l = 15 i d ? 1 a, v gen = ? 10 v, r g = 6 20 35 ns fall time t f 10 20 source-drain reverse recovery time t rr i f = ? 1.7 a, di/dt = 100 a/ s 30 60 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. SI3455ADV product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
|
