smd type ic smd type transistors 1.27 +0.1 -0.1 1.27 +0.1 -0.1 1.27 +0.1 -0.1 5.08 +0.1 -0.1 5.60 0.1max 8.7 +0.2 -0.2 5.28 +0.2 -0.2 2.54 +0.2 -0.2 2.54 15.25 +0.2 -0.2 4.57 +0.2 -0.2 0.4 +0.2 -0.2 2.54 +0.2 -0.2 0.81 +0.1 -0.1 to - 263 unit: mm 1gate 2drain 3 source 1gate 2drain 3 source features 6.2a, 700 v. r ds(on) =1.5 @v gs =10v low gate charge (typical 130nc) low crss(typical 15pf) fast switching 100% avalanche tested lmproved dv/dt capability absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 700 v drain current continuous (t c =25 ) 6.2 a drain current continuous (t c =100 ) 3.9 a drain current pulsed *1 i dm 24.8 a gate-source voltage v gss 30 v single pulsed avalanche energy*2 e as 600 mj avalanche current *1 i ar 6.2 a repetitive avalanche energy *1 e ar 14.2 mj peak diode recovery dv/dt *3 d v /d t 4.5 v/ns power dissipation @ t a =25 p d 3.13 w power dissipation @ t c =25 142 w derate above 25 1.14 w/ operating and storage temperature t j ,t stg -55 to150 maximum lead temperature for soldering purposes,1/8" from case for 5 seconds t l 300 thermal resistance junction to case r jc 0.88 /w thermal resistance junction to ambient *4 r ja 40 /w thermal resistance junction to ambient r ja 62.5 /w *1 repetitive rating:pulse width limited by maximum junction temperature *2 l=29mh,i as =6.2a,v dd =50v,r g =25 ,startion t j =25 *3 i sd 6.2a,d i /d t 200a/ s,v dd b vdss ,startiong t j =25 i d p d 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com smd type ic smd type transistors KQB6N70 smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type product specification
smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain-source breakdown voltage b vdss v gs =0v,i d = 250 a 700 v breakdown voltage temperature coefficient i d = 250 a, referenced to 25 0.78 mv/ v ds = 700 v, v gs =0v 10 a v ds = 560 v, t c =125 100 a gate-body leakage current,forward i gssf v gs =30v,v ds =0v 100 na gate-body leakage current,reverse i gssr v gs =-30 v, v ds =0v -100 na gate threshold voltage v gs(th) v ds =v gs ,i d = 250 a 3.0 5.0 v static drain-source on-resistance r ds(on) v gs =10v,i d = 3.1a 1.16 1.5 forward transconductance g fs v ds =50v,i d =3.1a* 6.4 s input capacitance c iss 1100 1400 pf output capacitance c oss 125 150 pf reverse transfer capacitance c rss 15 120 pf turn-on delay time t d(on) 25 60 ns turn-on rise time tr 70 150 ns turn-off delay time t d(off) 55 120 ns turn-off fall time t f 50 110 ns total gate charge q g 30 40 nc gate-source charge q gs 6.5 nc gate-drain charge q gd 13 nc maximum continuous drain-source diode forwrad current i s 6.2 a maximum pulsed drain-source diode forward current i sm 24.8 a drain-source diode forward voltage v sd v gs =0v,i s = 6.2 a 1.4 v diode reverse recovery time t rr 340 ns diode reverse recovery current q rr 2.7 c * pulse test: pulse width 300 s, duty cycle 2.0% v gs =0v,d if /d t = 100 a/ s,i s =6.2a* i dss zero gate voltage drain current v ds = 560 v, i d =6.2a,v gs =10v* v dd = 350 v, i d = 6.2a,rg=25 * v ds =25v,v gs =0v,f=1.0mhz KQB6N70 4008-318-123 sales@twtysemi.com 2of 2 http://www.twtysemi.com smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type product specification
|
