1/7 features digital sensor assembly with e910.62 applications traditional analog pir detector new digital pir detector ? direct connection to pir sensor elements ? temperature measurement ? differential pir input ? digital signal processing (dsp) ? single wire serial interface (doci tm ) ? operating voltage down to 2.7v ? low current consumption ? high dynamic range ? high supply rejection the e910.62 pir signal processor replaces the jfets and optional discrete components. the pin count of the detector is reduced to 3 pins. ? integration with pir sensor elements (hybrid modules) ? gas sensors ? high end pir systems general description the e910.62 integrated circuit is designed for interfacing passive infra red (pir) sensors with micro-controllers or processors. a single wire data out, clock in (doci) inter - face is provided for interfacing with a micro-controller. multiple devices can easily be operated at the same time. up to two pir sensors elements connect directly to the pir inputs. the pir signal is converted to a 14 bit digi - tal value. the e910.62 contains an on chip temperature measurement circuit with a resolution of better than 0.1k. the pir sensor voltages and the temperature value are supplied to an external microcontroller through the doci interface. m o s (p ty ) lt d. mi cr os ys te ms o n si li co n m emb er o f el mo s se mi co nd uc to r ag typical application circuit for gas sensor vss a nalog 1 vd d a nalog 2 serial in te rfac e v re f os c e9 10 .6 2a ad c ch c ad c ch 1 ad c ch 0 vd d gn d serial in te rfac e v re f os c deci ma to r lp f a dc ch nl 0 vd d gn d digital io vd d gn d a dc ch nl 1 a dc c deci ma to r lp f deci ma to r lp f e9 10 .6 2a vs s vd d do ci oc u1 e9 10 .6 2 vd d vi n 1 gn d 2 vo ut 3 u3 c3 c1 d1 vs s 1 2 j1 r1 + c4 vs s vd d vs s gp 5/ os c1 /c lk in 2 gp 4/ os c2 3 gp 3/ mc lr /v pp 4 vs s 8 vd d 1 gp 0 7 gp 1 6 gp 2/ t0 ck i 5 u2 pi c1 2c 50 8 a c2 vd d vs s b1 ac ti ve vs s r2 so ur ce vs s elmos semiconductor ag data sheet qm-no.: 25ds0090e.00 dual channel pir signal processor e910.62 this document contains information on a pre-production product. elmos semiconductor ag reserves the right to change specifcations and information herein without notice. preliminary information - jul 28, 2011
2/7 el ect r i c al c h ar act er i s ti cs_ ___ ___ __ ___ ___ ___ ___ _ __ ___ ___ ___ ___ _ __ a b s ol ut e m axi mum r a t i ngs p a r a m e t e r s y m bol m i n m a x un it rem a r k s s u p p l y v o l ta g e v dd - 0 .3 3 .6 v cur r ent i n to a n y p i n - 100 100 m a o ne p i n a t a t i m e s to r a ge t e m per a tu r e t st - 4 5 125 c s t r e s s e s bey ond t h o s e l i s t ed abov e m a y c aus e per m anent d a m age t o t he dev i c e . e x pos u r e t o a b s o l u t e m a x i m u m r a t i n g s m a y a f f e c t t he dev i c e r e liabili t y . esd p r o t e c t i on: a ll p i n s w ill b e abl e t o w i t h s t and a d i s c har ge o f a 1 0 0pf c apa c i t o r c har ged t o 1 . 6 k v t h r ough a 1500 ? s e r i e s r e s i s t o r . te s t m e t hod: m i l - s td - 883d m e t h od 3015. o pe ra t i ng c ond i t i on s ( t= 2 5 o c , v d d = 3 v unl e ss s t a t e d ot he r w i s e ) o pera t i n g t e m per a t u re ra n g e : -25 t o + 7 0 c p a r a m e t e r s y m bol m i n t y p m a x un it rem a r k s s uppl y s u p p l y v o l ta g e v dd 2 .7 3 .3 3 .6 v s u p p l y c u rrent i dd 13.5 1 8 a v dd = 3 .3 v dig it a l do ci i n t e r f a c e in put l o w v o l t age v il 2 0 % v dd in put h i gh v o l ta g e v ih 8 0 % v dd p u l l dow n c u rrent 200 a in/o u t to v dd p u l l u p c u rrent 130 a in/o u t to v ss in p u t c apacita n c e 5 p f data s e t up t i m e t s 2 1 /f clk data c l o c k l o w ti m e t l 200 n s data c l o c k h i gh t i m e t h 200 n s data b i t s e tt l i n g t i m e t bi t 1 s c load = 1 0 p f s e r i a l i n te r f a c e u p dat e t i m e t rep 512 1 /f clk a n a lo g i nput s p ir+ , p ir - , a n a lo g to dig it a l conv e r t e r in put l e a k age - 1 1 f a v in = - 10m v . . + 10m v - 5 0 5 0 m v di ffe r enti a l p irin i n put v o l ta ge r a nge - 100 100 m v com m on m ode a dc r e s o l u ti o n 1 4 b i ts max co u n t = 2 ^14 - 1 a dc s ens i ti v i t y 6 6 .5 7 .1 v /c oun t a dc t e m per a tu r e coef f i c i ent - 300 300 ppm /k 2 .5 v @ 0 . 5 h z 1 .5 v @ 1 h z 0 .5 v @ 2 h z rms out put noi s e r e f e rred to i n p u t 0 .4 v @ 5 h z a dc o ffs e t 7000 8192 9200 c ounts di g i ta l f i l te r t y p e & c u t o ff f r eq. f 0 f clk * 1 . 41 / 2 0 48 / p i h z 2 nd order b w l p f d i g i ta l f i l te r s a m p lin g f r e q . f s 1 /3 2 f clk do ci int e rrupt c y c l e t i 512 1 / f clk elmos semiconductor ag data sheet qm-no.: 25ds0090e.00 preliminary information - jul 28, 2011 this document contains information on a pre-production product. elmos semiconductor ag reserves the right to change specifcations and information herein without notice. dual channel pir signal processor e910.62
3/7 t e m p e r a t u r e m easu r e m e n t meas u r e m ent ra nge - 2 0 + 9 0 o c res o l u ti o n 7 2 8 0 8 8 cou n ts / k l i n ear i t y - 5 5 % - 2 0 o c to + 9 0 o c cou n t v a l u e a t a m b i ent 5700 6700 7 7 0 0 co unts @ 2 5 o c o scil la t o r in te r n a l o sci l l a t o r f r equ e n c y f osc 7 0 k hz in te r n a l c l o c k f r equenc y f clk f clk /2 t e m per a tu r e depe n d enc y - 5 0 0 5 0 0 ppm / k - 20o c to + 8 0 o c d etai l ed d esc r i p tion___ ___ ___ ___ _ ___ ___ ___ ___ _ __ ___ ___ ___ ___ _ __ o sci l l a t or t he ic c onta i n s an on c h i p l o w p o wer o sci l l a t o r , wi th a f r eque n c y o f 70 k hz . a l l ti m e r e l a te d s i gna l s a nd t h e c u to ff f r e q uenc i e s o f th e d i g i ta l f ilte r s a r e r e l a te d t o the o sci l l a to r ' s f r eque n c y . p i r i nput s a nd a / d c on v e rs i on t he anal o g to d i g i ta l c onv e r te r gener a t e s a d i g i ta l s i gna l f r o m th e v o l ta ge l e v e l m eas u r ed bet w e e n th e p irin and np irin t e r m i n a l s . t he outp u t s i g n a l f r o m th e a dc i s c onv e r te d t o a 14 b i t v a l ue b y d o wn s a m p ling to f c l k /3 2 . te mpe ra t ure m e asur e me nt t he on c h i p te m p e r a tu r e i s m eas u r ed b y c onv e r t i n g th e te m per a tu r e dep end ent v o l ta ge o f th e r e f e r enc e to a d i g i t a l v a l u e w i t h a r e s o l u t i o n o f b e tter t h an 0 .0 5 k . do ci v dd v s s a dc 1 dec i m a to r / b w f ilte r s e r i a l in te r f a c e v o l ta g e ref e r enc e o scillat o r pi r i n 1 n pi r i n 1 a dc c dec i m a to r a dc 0 dec i m a to r / b w f ilte r pi r i n 0 n pi r i n 0 elmos semiconductor ag data sheet qm-no.: 25ds0090e.00 preliminary information - jul 28, 2011 this document contains information on a pre-production product. elmos semiconductor ag reserves the right to change specifcations and information herein without notice. dual channel pir signal processor e910.62
4/7 para l l e l t o s e ri a l d a t a l a t c h ne w data i s tr ans f e rred f r o m th e dec i m a to r s to th e s e r i a l i n t e r f a c e e v e r y 3 2 s y s t e m c l o c k s , i f th e do ci outp u t i s a t l o w l e v e l and not a c ti v e ( b e i ng r ead) . if th e m i c r o c ontr o l l e r r e ads th e r e g i s te r f a s te r th an t he upd a te r a te o f th e f ilt e r , th e d a ta r ead i s ? 0 ? . t he e 910.6 2 gen e r a te s a n i n te rru p t e v e r y 5 1 2 s y s t e m c l o c k c y cle s , i f th e m i c r o c ontr o ller r eads a ll 4 2 b i ts w i t h i n 3 2 s y s t e m c l o c k c y cle s . t he i n te rru p t i s i n d i c a t ed b y th e e 9 1 0 .6 2 b y p u l l i n g do ci h i gh. t he m i c r o c ontr o l l e r m u s t wai t f o r 1us . i t th e n gener a te s a l o w t o h i gh tr ans i t i on on th e do ci lin e , bef o r e i t s a m p l e s th e d a ta b i t. t he f i r s t b i t r ead i s th e m sb. t h i s p r o c e ss i s r epeat ed unt i l a ll 4 2 b i ts h a v e b een r ead . a f te r th e l a s t b i t i s r ead, th e m i c r o c ontr o ller m u s t f o r c e l o w l e v e l a nd s ubs eque n tl y r e l e a s e do ci . if r eadi ng i s i n t e rrupte d f o r m o r e th an 32 s y s te m c l o c k s w i th th e do ci i n te r f a c e a t l o w l e v e l , th e outp u t d a ta l a tc h i s u p d a te d wi th n e w v a l ues . rea d i n g c an b e i n te rru p t ed, whi l e t he do ci i n te r f a c e i s f o r c ed h i gh. t he outp u t l a tc h i s not upda te d i n th i s c o n d i ti on. t he e 910.6 2 a c c epts r e a dout wi th c def i n e d ti m i ng. t he i n te rrupt s i gna l c an be i gnor ed a nd r eadi ng f r equ enc y c a n b e up t o f c l k / 64. in th i s m ode, th e c has t o f o r c e do ci to a h i g h l e v e l f o r th e dur a ti o n o f 3 devic e c l o c k c y c l e s ( 3 /f c l k ) and s ubs e que n tl y r e a d o u t th e data b i ts a s des c r i bed i n the t i m i n g d i agr a m b e l o w. t he r eado u t c a n b e t e r m i nate d a t any ti m e b y f o r c i ng th e do ci i n t e r f a c e to l o w l e v e l and r e l eas e i t t her e a f te r . d o c i int e rf ace t r e p = 512 s yst e m c l o c k s l sb m sb d a t a bi t t b i t m i c r o c ontr o l l e r d r i v e m i c r o c ontr o l l e r s a m p l e b i t t h t s m o s d e v i c e d r i v e data r e a d y o n m o s d e v i c e t l t r e p t r e p 42 x d a t a b i t cha nne l 0 1 3 1 2 2 1 0 cha n n e l 1 1 3 1 2 2 1 0 te m per a tu r e e 1 3 1 2 2 1 0 elmos semiconductor ag data sheet qm-no.: 25ds0090e.00 preliminary information - jul 28, 2011 this document contains information on a pre-production product. elmos semiconductor ag reserves the right to change specifcations and information herein without notice. dual channel pir signal processor e910.62
5/7 a d c i np ut s t a ge o ut of r a nge d e t e c t i on t he d y nam i c r ange o f th e a dc in put s ta ge i s appr o x i m a te l y + / - 50m v . t o a v o i d s a tu r a t i o n , th e e 9 1 0 . 62 c o n ta i n s o u t o f r ange det e c ti o n l o g i c , whi c h d e te c ts v a l u e s a b o v e 1 5 8 72 ( 97% o f r ange) a nd b e l o w 5 1 1 ( 3 % o f r ange) . if th e v a l ues a r e outs i de th i s r a nge, t he s wi tc hes s p and s n a r e c l o s ed f o r th e dur a ti o n o f 512 s y s t e m c l o c k s . t h i s ens u r e s f a s t s e tt ling a f te r d i s tu r b a n c e s . t he i npu t i m pedanc e o f th e a c tu a l a dc ( i p / i n) i s p r a c ti c a l l y i n f i n i te . s n i p a dc p irin np irin o u t o f rang e s p rp rn elmos semiconductor ag data sheet qm-no.: 25ds0090e.00 preliminary information - jul 28, 2011 this document contains information on a pre-production product. elmos semiconductor ag reserves the right to change specifcations and information herein without notice. dual channel pir signal processor e910.62
6/7 pad po si t i ons__ _ ___ ___ ___ ___ _ __ ___ ___ __ ___ __ __ ___ ___ ___ ___ _ __ c ontact i n fo r ma tion___ ___ ___ m ic r o s y s t e m s o n s il ic on ( p t y ) l t d . p r e to r i a , s o u th a f r i c a t e l : + 2 7 ( 12) 3 488 367 f a x : + 2 7 ( 12) 3 4 8 179 0 e m a il: s a l e s @ m o s .c o .z a v i s i t o u r web s i t e f o r the l a t e st i n f o r m a ti o n t est v dd p irin 1 np irin 1 do ci v s s p irin 0 np irin 0 elmos semiconductor ag data sheet qm-no.: 25ds0090e.00 preliminary information - jul 28, 2011 this document contains information on a pre-production product. elmos semiconductor ag reserves the right to change specifcations and information herein without notice. dual channel pir signal processor e910.62
7/7 elmos semiconductor ag data sheet qm-no.: 25ds0090e.00 dual channel pir signal processor e910.62 warning C life support applications policy elmos semiconductor ag is continually working to improve the quality and reliability of its products. never - theless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing elmos semiconductor ag products, to observe standards of safety, and to avoid situations in which malfunction or failure of an elmos semiconductor ag product could cause loss of human life, body injury or damage to property. in development your designs, please ensure that elmos semiconductor ag products are used within specifed operating ranges as set forth in the most recent product specifcations. general disclaimer information furnished by elmos semiconductor ag is believed to be accurate and reliable. however, no respon - sibility is assumed by elmos semiconductor ag for its use, nor for any infringements of patents or other rights of third parties, which may result from its use. no license is granted by implication or otherwise under any pat - ent or patent rights of elmos semiconductor ag. elmos semiconductor ag reserves the right to make changes to this document or the products contained therein without prior notice, to improve performance, reliability, or manufacturability. application disclaimer circuit diagrams may contain components not manufactured by elmos semiconductor ag, which are includ - ed as means of illustrating typical applications. consequently, complete information suffcient for construction purposes is not necessarily given. the information in the application examples has been carefully checked and is believed to be entirely reliable. however, no responsibility is assumed for inaccuracies. furthermore, such infor - mation does not convey to the purchaser of the semiconductor devices described any license under the patent rights of elmos semiconductor ag or others. contact information headquarters elmos semiconductor ag heinrich-hertz-str. 1 ? d-44227 dortmund (germany) phone: +492317549100 e-mail: sales@elmos.de internet: www.elmos.de regional sales and application support offce munich elmos semiconductor ag am gefgelhof 12 ? 85716 unterschlei?heim/eching phone: +49893183700 sales offce france elmos france sas 9/11 alle de l'arche ? la dfense ? 92671 courbevoie cedex (france) phone: +33149971591 sales and application support offce north america elmos na. inc. 32255 northwestern highway, suite 45 ? farmington hills, mi 48334 phone: +12488653200 sales and application support offce korea and japan elmos korea dongbu root building, 16-2, suite 509, ? sunae-dong, bundang-gu, seongnam-shi, kyonggi-do (korea) phone: +82317141131 sales and application support offce china elmos semiconductor technology (shanghai) co., ltd. 57-01e, lampl business centre, 57f, the exchange ? 1486 nanjing w rd. (299 tongren rd) ? jingan shanghai ? p.r.china 200040 phone: +862161717358 sales and application support offce singapore elmos semiconductor singapore pte ltd. 60 alexandra terrace ? #09-31 the comtech ? singapore 118502 phone: +6566351141 ? elmos semiconductor ag, 2011. reproduction, in part or whole, without the prior written consent of elmos semiconductor ag, is prohibited.
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