2013. 7. 02 1/6 semiconductor technical data KU3600N10D n channel trench mos field effect transistor revision no : 0 general description this trench mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for led lighting and dc/dc converters. features h v dss(min.) = 100v, i d = 5a h drain-source on resistance : r ds(on) =0.36 ? (max) @v gs =10v h qg(typ.) =4.2nc maximum rating (tc=25 ? ) characteristic symbol rating unit drain-source voltage v dss 100 v gate-source voltage v gss ? 20 v drain current @t c =25 ? i d 5 a @t c =100 ? 3.1 pulsed (note1) i dp 13 single pulsed avalanche energy (note 2) e as 12.4 mj repetitive avalanche energy (note 1) e ar 0.1 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns drain power dissipation t a =25 ? p d 22.7 w derate above25 ? 0.18 w/ ? maximum junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? thermal characteristics thermal resistance, junction-to-case r thjc 5.5 ? /w thermal resistance, junction-to- ambient r thja 110 ? /w dpak (1) dim millimeters a a b b c c d d f ff h g k g j l k l m 0.96 max 0.90 max e e m n h 0.70 min o 0.1 max n 123 6.60 0.20 + _ 6.10 0.20 + _ 5.34 0.30 + _ 0.70 0.20 + _ 2.70 0.15 + _ 2.30 0.10 + _ 1.80 0.20 + _ 0.50 0.10 + _ 2.30 0.10 + _ 0.50 0.10 + _ j o 1. gate 2. drain 3. source pin connection
2013. 7. 02 2/6 KU3600N10D revision no : 0 electrical characteristics (tc=25 ? ) note 1) repetivity rating : pulse width limited by junction temperature. note 2) l = 5mh, i s =1.7a, v dd =50v, r g = 25 ? , starting t j = 25 ? . note 3) i s ? 1.7a, di/dt ? 300a/ k , v dd ? bv dss , starting t j = 25 ? . note 4) pulse test : pulse width ? 300 k , duty cycle ? 2%. note 5) essentially independent of operating temperature. ku 3600n10 d marking characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 a, v gs =0v 100 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 ? - 0.1 - v/ ? drain cut-off current i dss v ds =100v, v gs =0v, - - 10 a gate threshold voltage v th v ds =v gs , i d =250 a 2.0 - 4.0 v gate leakage current i gss v gs = ? 20v, v ds =0v - - ? 100 na drain-source on resistance r ds(on) v gs =10v, i d =2.5a - 0.30 0.36 ? v gs =6v, i d =2.0a - 0.40 dynamic total gate charge q g v ds =80v, i d =1.7a v gs =10v (note4,5) - 4.2 5.5 nc gate-source charge q gs - 1.0 - gate-drain charge q gd - 1.5 - turn-on delay time t d(on) v dd =50v, i d =1.7a r g =25 ? (note4,5) v gs =10v - 20 - ns turn-on rise time t r - 15 - turn-off delay time t d(off) - 50 - turn-off fall time t f - 10 - input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 230 320 pf output capacitance c oss - 25 - reverse transfer capacitance c rss - 9.0 - source-drain diode ratings continuous source current i s v gs 2013. 7. 02 3/6 KU3600N10D revision no : 0 0 1.2 1.0 0.8 0.6 0.4 0.2 i ds =2.5a 0 0.5 1.0 1.5 246 6 8 v ds = 7v, 10v v ds = 5v v ds = 4.5v t c = 100 ? t c = 25 ? v ds = 10v
2013. 7. 02 4/6 KU3600N10D revision no : 0 drain current i d (a) gate - charge q g (nc) drain - source voltage v ds (v) fig8. q g - v gs fig9. safe operation area gate - source voltage v gs (v) 10 1 10 2 10 1 10 -1 10 0 10 0 10 1 10 2 10 3 10 0 10 2 0 3 1 2 6 5 4 75 150 125 50 100 025 drain current i d (a) c junction temperature t j ( ) fig10. i d - t j t c = 25 t j = 150 single pulse c c fig 7. c - v ds drain - source voltage v ds (v) capacitance (pf) 0 5 15 25 35 10 20 30 40 c rss c oss c iss operation in this area is limited by r ds(on) 0 12 10 6 2 4 8 6 3 1 5 4 2 0 i d =1.7a v ds = 80v time ( sec ) fig11. transient thermal response curve transient thermal resistance 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -1 10 1 10 0 sin g le pulse dut y=0 . 5 0.02 0.05 0.20 0.01 10ms 1ms 100 s 10 s 0.10 - duty factor, d= t 1 /t 2 t j(max) - t c - r thjc = p d t 1 t 2 p dm dc
2013. 7. 02 5/6 KU3600N10D revision no : 0 fig12. gate charge i d v ds v gs v gs v ds v gs r l 10v 5 v 25 ? r l q g q gd q gs q t p fig14. resistive load switching fig13. single pulsed avalanche energy v ds (t) i d (t) v ds v gs 10 v 25 ? l time e as = li as 2 bv dss - v dd bv dss 1 2 v dd i as bv dss v ds v gs t r t d(off) t off t d(on) t on t f 10% 90% 50v 0.8 v dss 0.5 v dss
2013. 7. 02 6/6 KU3600N10D revision no : 0 fig15. source - drain diode reverse recovery and dv /dt l i sd v ds v sd i sd (dut) v ds (dut) v gs 10v driver dut body diode recovery dv/dt body diode forword voltage drop body diode forword current body diode reverse current di/dt v dd i rm 0.5 v dss
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