mar-08-2001 1 bBY66-05 1 2 3 vps05161 silicon tuning diode high capacitance ratio high q hyperabrupt tuning diode designed for low tuning voltage operation for vco' s in mobile communications equipment very low capacitance spread type marking pin configuration package bBY66-05 obs 1=a1 2=a2 3=c1/c2 sot-23 maximum ratings parameter symbol value unit diode reverse voltage v r 12 v forward current i f 50 ma operating temperature range t op -55 ... 150 c storage temperature t stg -55 ... 150
mar-08-2001 2 bBY66-05 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics reverse current v r = 10 v v r = 10 v, t a = 65 c i r - - - - 10 100 na ac characteristics diode capacitance 1) v r = 1 v, f = 1 mhz v r = 2 v, f = 1 mhz v r = 3 v, f = 1 mhz v r = 4.5 v, f = 1 mhz c t 66 33 19.7 12 68.7 35.4 20.95 12.7 71.5 38 22.2 13.5 pf capacitance ratio v r = 1 v, v r = 4.5 v c t1 / c t4.5 5 5.41 - series resistance v r = 1 v, f = 470 mhz r s - 0.25 0.4 case capacitance f = 1 mhz c c - 0.09 - pf series inductance l s - 0.7 - nh 1 capacitance groups at 1v, coded 01; 02 c t /groups 01 02 c 1v min 66pf 68,5pf c 1v max 69pf 71,5pf deliveries contain either c t group 01 or group 02 (marked on reel). no direct order of c t groups possible
mar-08-2001 3 bBY66-05 diode capacitance c t = (v r ) f = 1mhz 0 1 2 3 v 5 v r 0 10 20 30 40 50 60 pf 80 c t temperature coefficient of the diode capacitance tc c = ( v r ) 1 2 3 v 5 v r 0 300 600 ppm/c 1200 tc c reverse current i r = ( v r ) t a = parameter 2 3 4 5 6 7 8 9 10 v 12 v r 0 10 1 10 2 10 3 10 4 10 pa i r ta=+25c ta=+65c ta=+85c permissible pulse load i fmax / i fdc = ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 i fmax / i fdc d=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
mar-08-2001 4 bBY66-05 permissible puls load r thjs = ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 3 10 k/w r thjs d=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0
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