Part Number Hot Search : 
222051B P1200A07 K4T1G084 SY58621L 0N60C3 00160 12020 SC505
Product Description
Full Text Search
 

To Download NTGS4141NT1G Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  ntgs4141n power mosfet 30 v, 7.0 a, single n?channel, tsop?6 features ? low r ds(on) ? low gate charge ? pb?free package is available applications ? load switch ? notebook pc ? desktop pc maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit drain?to?source voltage v dss 30 v gate?to?source voltage v gs 20 v continuous drain current (note 1) steady state t a = 25 c i d 5.0 a t a = 85 c 3.6 t 10 s t a = 25 c 7.0 power dissipation (note 1) steady state t a = 25 c p d 1.0 w t 10 s 2.0 continuous drain current (note 2) steady state t a = 25 c i d 3.5 a t a = 85 c 2.5 power dissipation (note 2) t a = 25 c p d 0.5 w pulsed drain current t p = 10  s i dm 21 a operating junction and storage temperature t j , t stg ?55 to 150 c source current (body diode) i s 2.0 a single pulse drain?to?source avalanche energy (v dd = 30 v, i l = 10.4 a, v gs = 10 v, l = 1.0 mh, r g = 25  ) eas 54 mj lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c thermal resistance ratings rating symbol max unit junction?to?ambient ? steady state (note 1) r ja 125 c/w junction?to?ambient ? t 10 s (note 1) r ja 62.5 junction?to?ambient ? steady state (note 2) r ja 248 1. surface?mounted on fr4 board using 1 inch sq pad size (cu area = 1.127 in sq [1 oz] including traces). 2. surface?mounted on fr4 board using the minimum recommended pad size (cu area = 0.0773 in sq). tsop?6 case 318g style 1 marking diagram s4 m   s4 = device code m = date code  = pb?free package (note: microdot may be in either location) pin assignment 3 gate 1 drain source 4 2 drain drain 5 drain 6 device package shipping ? ordering information ntgs4141nt1 tsop?6 3000/tape & ree l NTGS4141NT1G tsop?6 (pb?free) 3000/tape & ree l ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. 30 v 30 m  @ 4.5 v 21.5 m  @ 10 v r ds(on) typ 7.0 a i d max v (br)dss 1256 3 4 drain gate source n?channel 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 1 of 2 smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol test condition min typ max unit off characteristics drain?to?source breakdown voltage v (br)dss v gs = 0 v, i d = 250  a 30 v drain?to?source breakdown voltage temperature coefficient v (br)dss /t j 18.4 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 24 v t j = 25 c 1.0  a t j = 125 c 10 gate?to?source leakage current i gss v ds = 0 v, v gs = 20 v 100 na on characteristics (note 3) gate threshold voltage v gs(th) v gs = v ds , i d = 250  a 1.0 3.0 v negative threshold temperature coefficient v gs(th) /t j 5.7 mv/ c drain?to?source on resistance r ds(on) v gs = 10 v, i d = 7.0 a 21.5 25 m  v gs = 4.5 v, i d = 6.0 a 30 35 forward transconductance g fs v ds = 10 v, i d = 7.0 a 30 s charges, capacitances and gate resistance input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = 24 v 560 pf output capacitance c oss 115 reverse transfer capacitance c rss 75 total gate charge q g(tot) v gs = 10 v, v ds = 15 v, i d = 7.0 a 12 nc threshold gate charge q g(th) 0.85 gate?to?source charge q gs 1.9 gate?to?drain charge q gd 3.0 total gate charge q g(tot) v gs = 4.5 v, v ds = 15 v, i d = 7.0 a 6.0 nc threshold gate charge q g(th) 0.8 gate?to?source charge q gs 1.85 gate?to?drain charge q gd 3.0 gate resistance r g 2.8  switching characteristics (note 4) turn?on delay time t d(on) v gs = 10 v, v ds = 24 v, i d = 7.0 a, r g = 3.0  6.0 ns rise time t r 15 turn?off delay time t d(off) 18 fall time t f 4.0 drain ? source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 2.0 a t j = 25 c 0.78 1.0 v t j = 125 c 0.63 reverse recovery time t rr v gs = 0 v di s /dt = 100 a/  s, i s = 2.0 a 15 ns charge time t a 9.0 discharge time t b 6.0 reverse recovery charge q rr 8.0 nc 3. pulse test: pulse width  300  s, duty cycle  2%. 4. switching characteristics are independent of operating junction temperatures. 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 2 of 2 ntgs4141n smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification


▲Up To Search▲   

 
Price & Availability of NTGS4141NT1G

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X